公开(公告)号：US20110204023A1

公开(公告)日：2011-08-25

申请号：US12715522

申请日：2010-03-02

Applicant: No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

Inventor： No-Hyun Huh ,  Gyoo-Dong Kim ,  Chang-Woo Nam ,  Sung-Min Park ,  Dae-Kyu Choi

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H01J37/32165 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32449

Abstract: Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

Abstract translation: 公开了一种多电感耦合等离子体反应器及其方法。 在多电感耦合等离子体反应方法中，用于增加要处理的衬底的特定部分的蚀刻方法包括蚀刻要处理的衬底的特定部分; 以及在蚀刻的特定部分的表面上沉积钝化层，其中反复进行蚀刻和沉积步骤，并且当存在由中心等离子体源和外围等离子体源形成的等离子体时，执行两个步骤之一。 根据本发明的多电感耦合等离子体反应器及其方法，由于中心等离子体源和外围源分别设置，因此可以在衬底的整个区域上均匀地处理等离子体。 此外，可以使用在中心等离子体源和外围等离子体源之间接地的防干扰电极在等离子体反应器中形成无电干扰的独立多等离子体区域。 此外，由中央等离子体源和外围等离子体源形成的等离子体用于深刻蚀刻待处理衬底的特定部分。

公开(公告)号：US20060166481A1

公开(公告)日：2006-07-27

申请号：US11328765

申请日：2006-01-10

Applicant: Gyoo-Dong Kim ,  Young-Bum Hwangbo ,  Jong-Min Oh

Inventor： Gyoo-Dong Kim ,  Young-Bum Hwangbo ,  Jong-Min Oh

IPC: H01L21/4763

CPC classification number: H01L21/32136 ,  H01L27/14843

Abstract: A method of forming a metal layer pattern comprises forming an interlayer insulating layer on a semiconductor substrate, forming a metal layer on the interlayer insulating layer, forming a mask pattern to expose a predetermined area of the metal layer, and forming a metal layer pattern by dry etching the exposed predetermined area of the metal layer with a substrate bias power of about 5 W to about 40 W.

Abstract translation: 形成金属层图案的方法包括在半导体衬底上形成层间绝缘层，在层间绝缘层上形成金属层，形成掩模图案以暴露金属层的预定区域，以及通过以下方式形成金属层图案： 以约5W至约40W的衬底偏置功率干蚀刻金属层的暴露的预定区域。

公开(公告)号：US20130052830A1

公开(公告)日：2013-02-28

申请号：US13337860

申请日：2011-12-27

Applicant: Gyoo-Dong KIM ,  Dae-Kyu Choi

Inventor： Gyoo-Dong KIM ,  Dae-Kyu Choi

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/3065

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01L21/30655 ,  H01L21/76898

Abstract: Provided is a plasma reactor having a dual inductively coupled plasma source that includes a plasma reactor body having a substrate processing area and a dielectric window which comes in contact with the substrate processing area; and a plasma source including a first antenna for providing first induced electromotive force for generating plasma onto a central area of the substrate processing area through the dielectric window and a second antenna for providing second induced electromotive force for generating the plasma onto an outer area of the substrate processing area, wherein a TSV is formed at a target substrate within the substrate processing area by repeatedly performing a deposition process and an etch process using the plasma generated through the dual inductively coupled plasma source.

Abstract translation: 提供了具有双电感耦合等离子体源的等离子体反应器，其包括具有基板处理区域的等离子体反应器主体和与基板处理区域接触的电介质窗口; 以及等离子体源，其包括第一天线，用于通过电介质窗提供用于在基板处理区域的中心区域上产生等离子体的第一感应电动势;以及第二天线，用于提供用于在等离子体的外部区域产生等离子体的第二感应电动势 衬底处理区域，其中通过重复执行沉积处理和使用通过双电感耦合等离子体源产生的等离子体的蚀刻工艺，在衬底处理区域内的目标衬底处形成TSV。