Anodically bonded cell, method for making same and systems incorporating same
    5.
    发明申请
    Anodically bonded cell, method for making same and systems incorporating same 有权
    阳离子型电池,制造方法及其结合体系

    公开(公告)号:US20050184815A1

    公开(公告)日:2005-08-25

    申请号:US11030009

    申请日:2005-01-05

    IPC分类号: H01J25/50

    CPC分类号: G04F5/14

    摘要: A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

    摘要翻译: 适用于原子钟的电池及其制造方法,所述电池包括:形成有凹部的硅晶片; 至少一种无定形硅酸盐部件,其离子迁移率和温度膨胀系数近似于密封凹部的硅的非晶硅酸盐部件; 以及包含在所述凹部中的含碱金属成分和缓冲气体。 该方法包括:提供硅晶片; 通过硅晶片形成空腔; 将含碱金属的组分和缓冲气体引入所述空腔中; 并且将具有大约硅的离子迁移率和温度膨胀系数的至少一种无定形硅酸盐构件阳极结合到晶片上以封闭空腔。

    Anodically bonded ultra-high-vacuum cell
    7.
    发明申请
    Anodically bonded ultra-high-vacuum cell 有权
    阳极粘结超高真空电池

    公开(公告)号:US20060267023A1

    公开(公告)日:2006-11-30

    申请号:US11433930

    申请日:2006-05-15

    申请人: Sterling McBride

    发明人: Sterling McBride

    IPC分类号: H01L31/0312

    摘要: The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a secondary substrate with silicon layer bonded onto the secondary substrate.

    摘要翻译: 本发明公开了一种阳极结合的真空电池结构,其具有包括空腔的玻璃基板和沉积在玻璃基板上的基板,由此封闭空腔以形成接合界面。 所述接合界面具有硅,使得所述衬底包括硅层或具有硅层结合到所述次级衬底上的次级衬底。