摘要:
To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10−10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要:
A charged particle beam apparatus in which an electrostatic lens is used as a main focusing element to obtain a subminiature high-sensitivity high-resolution SEM, a drift tube for an electron beam is located inside a column between an electron source and a sample, and a detector for secondary electrons is located inside the drift tube. This solves the problem associated with the provision of a secondary electron detector, which heretofore has been a bottleneck in making a subminiature high-resolution SEM column.
摘要:
To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10−10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要:
A semiconductor wafer includes a top surface on which a semiconductor circuit pattern is to be fabricated, and a bottom surface on which alignment marks for positioning the semiconductor circuit pattern are arranged. The alignment marks are arranged at a predetermined pitch and in an arrangement that is not unique to the pattern formed on the top surface.
摘要:
To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10−10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要:
To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 1010 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要:
To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10−10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.
摘要:
A charged particle beam apparatus in which an electrostatic lens is used as a main focusing element to obtain a subminiature high-sensitivity high-resolution SEM, a drift tube for an electron beam is located inside a column between an electron source and a sample, and a detector for secondary electrons is located inside the drift tube. This solves the problem associated with the provision of a secondary electron detector, which heretofore has been a bottleneck in making a subminiature high-resolution SEM column.
摘要:
In the polishing machine 10 for pressing the polished surface 7 of the workpiece 1 against the face where there are abrasives 15 of the rotating polishing tool 11 and executing chemical mechanical polishing, the brushing device 30, the cleaner 40, the abrasive supplier 52, and the pure water supplier 60 are sequentially arranged behind the location of the head 20 for pressing the workpiece 1 against the polishing tool 11 in the rotational direction. The cleaner 40 sprays the cleaning water 47 to the face where there are abrasives 15 of the rotating polishing tool 11 and sucks and collects it by the vacuum hole 45. Fresh slurry 62 is always supplied by the slurry supplier 63 comprising the abrasive supplier 52 and the pure water supplier 60.
摘要:
In printing patterns on a mask onto a wafer with high accuracy via a reflective reduction projection optical system by using an X-ray or vacuum ultraviolet beam there is an elliptical mirror having a source position defined in an X-ray source and a position of reflection image of entrance pupil of an imaging optical system with respect to the mask as foci and introducing means for synchronously scanning the mask and wafer. Due to inserting a plane mirror for bending an X-ray by approximately 90.degree. at at least one point in the imaging optical system so that the plane of incidence may be perpendicular to the polarization plane the reflectivity does not lower even when the angle of incidence is 45.degree.. A reflecting mirror or an X-ray filter having a lower reflectivity in the peripheral part thereof as compared with the reflectivity of the central part thereof in the stop position of the imaging optical system, brings about an effect of lessened influence of mutual interference between adjacent pattern provides pattern printing with high shape accuracy.