METHODS FOR SELF-ASSEMBLING MONOLAYERS TO MITIGATE HYDROGEN PERMEATION

    公开(公告)号:US20240342753A1

    公开(公告)日:2024-10-17

    申请号:US18133988

    申请日:2023-04-12

    CPC classification number: B05D7/146 B05D3/002 C21D1/34

    Abstract: The presently disclosed methods provide for preparing a stable hydrophobic self-assembled monolayer (SAM) coating, that includes preparing a SAM solution by combining a SAM compound with an initial solvent and an additional solvent and mixing, in a sealed container, the SAM solution at a first fixed temperature at a constant rotational speed for a first fixed time interval. The SAM coating is then prepared by treating a substrate to achieve pristine state, and heating the substrate at a second fixed temperature for a second fixed time interval. Then within a sealed container, immersing the substrate in the SAM solution for a third fixed time interval. Following the completion of the third fixed time interval, the substrate is removed from the sealed container and treated with the initial solvent and the additional solvent to remove excess SAM material, and heated at a third fixed temperature.

    Applications of non-collinearly coupled magnetic layers

    公开(公告)号:US10446208B2

    公开(公告)日:2019-10-15

    申请号:US16228725

    申请日:2018-12-20

    Abstract: A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.

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