Abstract:
Disclosed is a device for inspecting a bonded wafer using laser, which has a simple structure to facilitate an operation of the device and can detect an interface defect of the bonded wafer economically and highly reliably. To this end, the device for inspecting the bonded wafer using laser includes a laser unit, a laser diffusion unit, and a detection unit. If the device of inspecting the bonded wafer using laser according to the present invention is used, it is possible to advantageously inspect a wafer interface at a magnification desired by an inspector. In addition, the device has a simple structure, and thus it is advantageously easy to operate the device.
Abstract:
Disclosed are a syringe-shaped culture tube which has a wide surface area and is changeable by a user to a desired size, and a cell culture apparatus in which a plurality of the culture tubes are mounted. The cell culture apparatus allows a culture medium to constantly and smoothly contact the entire inner circumference of the culture tube and rotate by a rotation unit at a preset speed when the culture tube is filled with the culture medium. Thus, the cell culture apparatus can promote stirring and gas supply and increase the gas exchange rate. Also, it can reduce consumption of the culture medium.The cell culture apparatus according to the present disclosure includes: the culture tube with a culture space formed therein, wherein a vent hole through which the culture medium flows in and out of the culture space is formed at one or both ends of the culture tube and the inner diameter of which gradually tapers toward the outside at one end thereof is formed; a rotation support member with a plurality of the culture tubes horizontally mounted in a longitudinal direction that rotates around a rotation shaft formed at the center; and a rotation unit for rotating the rotation support member around the rotation shaft.
Abstract:
Provided is a bonded wafer inspection method using a laser method allowing a simple and reliable test in an examination of a bonded wafer interface using a laser. To do this, a laser used bonded wafer inspection method includes, emitting a laser beam through a laser means, diffusing the emitted laser beam by a laser diffusion means, illuminating the diffused laser beam on a bonded wafer, and detecting a laser beam illuminated and transmitted at the bonded wafer using a detecting means. In a case a bonded wafer inspection method using a laser of the invention is used, defects by a foreign substance occurring at an interface of a bonded wafer is can be examined in a simple way and thus high work performance may be expected.