公开(公告)号：US20120314212A1

公开(公告)日：2012-12-13

申请号：US13511112

申请日：2010-11-22

Applicant: Dong Young Jang ,  Seok-Kee Hong ,  Ho-Jin Hwang ,  Young-Hwan Lim ,  Chang-Woo Ban ,  Si-Eun Yang

Inventor： Dong Young Jang ,  Seok-Kee Hong ,  Ho-Jin Hwang ,  Young-Hwan Lim ,  Chang-Woo Ban ,  Si-Eun Yang

IPC: G01N21/956 ,  G01N21/958

CPC classification number: G01N21/9505 ,  G01N21/94 ,  H01L22/12

Abstract: Disclosed is a device for inspecting a bonded wafer using laser, which has a simple structure to facilitate an operation of the device and can detect an interface defect of the bonded wafer economically and highly reliably. To this end, the device for inspecting the bonded wafer using laser includes a laser unit, a laser diffusion unit, and a detection unit. If the device of inspecting the bonded wafer using laser according to the present invention is used, it is possible to advantageously inspect a wafer interface at a magnification desired by an inspector. In addition, the device has a simple structure, and thus it is advantageously easy to operate the device.

Abstract translation: 公开了一种用于使用激光检查接合晶片的装置，其具有简单的结构以便于装置的操作并且可以经济地且高度可靠地检测接合晶片的界面缺陷。 为此，用激光单元，激光扩散单元和检测单元检测使用激光的接合晶片的装置。 如果使用根据本发明的使用激光的接合晶片的检查装置，则可以以检查者期望的放大率有利地检查晶片界面。 此外，该装置具有简单的结构，因此有利于操作该装置。

公开(公告)号：US20110122403A1

公开(公告)日：2011-05-26

申请号：US12951665

申请日：2010-11-22

Applicant: Dong Young JANG ,  Seok-Kee HONG ,  Ho-Jin HWANG ,  Young-Hwan LIM ,  Chang-Woo BAN ,  Si-Eun YANG

Inventor： Dong Young JANG ,  Seok-Kee HONG ,  Ho-Jin HWANG ,  Young-Hwan LIM ,  Chang-Woo BAN ,  Si-Eun YANG

IPC: G01N21/95

CPC classification number: G01N21/9505 ,  G01N21/94

Abstract: Provided is a bonded wafer inspection method using a laser method allowing a simple and reliable test in an examination of a bonded wafer interface using a laser. To do this, a laser used bonded wafer inspection method includes, emitting a laser beam through a laser means, diffusing the emitted laser beam by a laser diffusion means, illuminating the diffused laser beam on a bonded wafer, and detecting a laser beam illuminated and transmitted at the bonded wafer using a detecting means. In a case a bonded wafer inspection method using a laser of the invention is used, defects by a foreign substance occurring at an interface of a bonded wafer is can be examined in a simple way and thus high work performance may be expected.

Abstract translation: 提供一种使用激光方法的接合晶片检查方法，其允许使用激光检查键合晶片界面的简单可靠的测试。 为此，使用激光使用的接合晶片检查方法包括：通过激光装置发射激光束，通过激光漫射装置漫射发射的激光束，照射粘合晶片上的漫射激光束，以及检测照射的激光束， 使用检测装置在接合晶片上传输。 在使用本发明的激光的接合晶片检查方法的情况下，可以以简单的方式检查在接合晶片的界面处发生的异物的缺陷，从而可以预期高的工作性能。