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公开(公告)号：US5475157A
公开(公告)日：1995-12-12
申请号：US256245
申请日：1994-09-02
摘要： There is disclosed a process for producing an aromatic hydroxylic compound by acid decomposition of a hydroperoxide having the general formula (I) ##STR1## wherein Ar represents an aromatic hydrocarbon group having a valence of n; and n represents an integer of 1 or 2, in the presence of an acid catalyst, thereby to provide an aromatic hydroxylic compound having the general formula (II)Ar--(OH)n (II)wherein Ar and n are the same as above defined, characterized in that tetrafluoroboric acid, hexafluorosilicic acid or hexafluorophosphoric acid is used as the acid catalyst. According to this process, the aromatic hydroxylic compound is obtained in a high yield while the by-production of hydroxyacetone is effectively suppressed. In paricular, a more effective suppression of by-production of hydroxyacetone and a higher yield of the target compound can be achieved by carrying out the acid decomposition reaction in two stages wherein the first stage of the reaction is carried out in the first reactor at a temperature of 50.degree.-95.degree. C., the resultant reaction mixture is sent to the second reactor, and the second stage of the reaction is then carried out in the second reactor at a temperature of 80.degree.-120.degree. C.
摘要翻译： PCT No.PCT / JP93 / 01586 Sec。 371日期：1994年9月2日 102（e）1994年9月2日PCT 1993年11月1日PCT公布。 公开号WO94 / 10115 PCT 日本公报1994年5月11日。公开了通过酸分解具有通式（I）c的化合价n为n的烃基的氢过氧化物制备芳族羟基化合物的方法。 并且n表示1或2的整数，在酸催化剂的存在下，由此提供具有通式（II）的Ar-（OH）n（II）的芳族羟基化合物，其中Ar和n与上述相同 其特征在于使用四氟硼酸，六氟硅酸或六氟磷酸作为酸催化剂。 根据该方法，以高产率获得芳族羟基化合物，同时有效抑制羟基丙酮的副产物。 在这种情况下，可以通过在两个阶段中进行酸分解反应来实现对羟基丙酮的副产物的更有效抑制和目标化合物的较高产率，其中反应的第一阶段在第一反应器中以 温度为50-95℃，将所得反应混合物送至第二反应器，然后在第二反应器中在80-120℃的温度下进行第二阶段反应。
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公开(公告)号：US20150155816A1
公开(公告)日：2015-06-04
申请号：US14399363
申请日：2012-07-12
CPC分类号： H02P27/06 , B60L11/12 , H02M1/08 , H02M3/3353 , H02M2001/0006 , H02M2001/007 , H02M2001/008 , H02M2001/325 , H02P5/74 , Y02T10/646 , Y02T10/7077
摘要： An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.
摘要翻译： 本发明的一个目的是在允许确保电源冗余的结构中实现车载电动机驱动控制板的尺寸和成本的降低。 车载电动机驱动控制基板由一个印刷电路板形成，其上形成有用于驱动三相电动机的两个逆变器电路的两个逆变器驱动电路，以及用于驱动电压的升压/降压驱动电路 用于向逆变器电路供电的升压/降压电路。 车载电动机驱动控制基板还包括：第一电源电路，用于向构成升压降压驱动电路的构成电路和两个逆变器驱动电路的一部分供电;以及第二电源电路， 向升压降压驱动电路和两个逆变器驱动电路中的其余构成电路供电。
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公开(公告)号：US5475183A
公开(公告)日：1995-12-12
申请号：US161061
申请日：1993-12-03
CPC分类号： B01J21/04 , C07C1/24 , C07C2521/04 , C07C2521/12 , Y02P20/52
摘要： A process for the production of lower olefins by dehydrating lower alcohols having 2 to 4 carbon atoms which comprises using a .gamma.-alumina catalyst containing 0.3% by weight or less of impurities in total excluding SiO.sub.2, the impurities including 0.2% by weight or less of sulfur content calculated in terms of SO.sub.4 - and 0.05% by weight or less of sodium content calculated in terms of Na.sub.2 O, and/or a process for the production of lower olefins by dehydrating lower alcohols having 2 to 4 carbon atoms that comprises using a .gamma.-alumina catalyst which contains 0.5 to 5% by weight of SiO.sub.2.According to the process of the present invention, lower olefins can be produced from lower alcohols with high yield and high selectivity for a prolonged period of time without reducing the catalytic activity.
摘要翻译： 通过使具有2至4个碳原子的低级醇脱水生产低级烯烃的方法，该方法包括使用含有0.3重量％以下除了SiO 2以外的杂质总量为0.3重量％以下的γ-氧化铝催化剂，包含0.2重量％以下的杂质 根据SO 4计算的硫含量和以Na 2 O计算的0.05重量％以下的钠含量，和/或通过使具有2至4个碳原子的低级醇脱水生产低级烯烃的方法，包括使用γ 含有0.5〜5重量％的SiO 2的氧化铝催化剂。 根据本发明的方法，低级烯烃可以从高产率和高选择性的低级醇生产较长时间，而不降低催化活性。
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4.发明授权Preparation of propylene by dehydration of isopropanol in the presence of a pseudo-boehmite derived gamma alumina catalyst 失效在假勃姆石衍生的γ氧化铝催化剂存在下，通过异丙醇脱水制备丙烯
公开(公告)号：US5227563A
公开(公告)日：1993-07-13
申请号：US700319
申请日：1991-05-09
CPC分类号： B01J21/04 , C07C1/24 , C07C2521/04 , Y02P20/52
摘要： Propylene can be prepared in high yield and selectivity by dehydrating isopropanol in the presence of a .gamma.-alumina catalyst having a mean pore diameter of from 30 to 150 .ANG. with a standard deviation (.sigma..sub.n) of from 10 to 40 .ANG. based on statistic calculation from pore diameter and pore volume.
摘要翻译： 丙烯可以通过在平均孔径为30至150的γ-氧化铝催化剂的存在下脱水异丙醇而制备，基于统计学计算，标准偏差（σ）为10至40安培 从孔径和孔体积。
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公开(公告)号：US08710646B2
公开(公告)日：2014-04-29
申请号：US13310023
申请日：2011-12-02
IPC分类号： H01L23/48
摘要： A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
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6.发明授权Pyrimidines and pharmaceutically acceptable salts thereof useful in treatment of neurological disorders 失效嘧啶类及其药学上可接受的盐可用于治疗神经障碍
公开(公告)号：US5304555A
公开(公告)日：1994-04-19
申请号：US600171
申请日：1990-10-19
申请人： Akira Awaya , Kazutoshi Horikomi , Tadayuki Sasaki , Hisashi Kobayashi , Akira Mizuchi , Takuo Nakano , Ikuo Tomino , Shintaro Araki , Mitsuyuki Takesue , Koji Kato , Keiichi Yokoyama
发明人： Akira Awaya , Kazutoshi Horikomi , Tadayuki Sasaki , Hisashi Kobayashi , Akira Mizuchi , Takuo Nakano , Ikuo Tomino , Shintaro Araki , Mitsuyuki Takesue , Koji Kato , Keiichi Yokoyama
IPC分类号： C07D239/48 , C07D487/04 , C07D279/12 , A61K31/54
CPC分类号： C07D239/48 , C07D487/04
摘要： This invention provides novel pyrimidines or their pharmaceutically acceptable salts thereof and process for preparation thereof. The novel compounds are useful for neurological diseases of the peripheral and central nervous systems of animals.
摘要翻译： 本发明提供新的嘧啶或其药学上可接受的盐及其制备方法。 该新化合物可用于动物的外周和中枢神经系统的神经疾病。
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公开(公告)号：US09484927B2
公开(公告)日：2016-11-01
申请号：US14653822
申请日：2012-12-28
申请人： Mitsunori Aiko , Shintaro Araki
发明人： Mitsunori Aiko , Shintaro Araki
CPC分类号： H03L1/022 , H01L23/34 , H01L23/58 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/48 , H01L24/73 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/06181 , H01L2224/291 , H01L2224/32225 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/37099
摘要： A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited. The gate drive circuit controls the gate voltage according to the selective control signal.
摘要翻译： 半导体器件包括具有栅极并被栅极电压控制的半导体元件，控制栅极电压的栅极驱动电路，连接到半导体元件的电极，流过电极的半导体元件中的主电流，温度感测 感测电极的温度的部分，生成部，其基于由感温部感测的温度，生成用于在半导体元件的给出最大量的通电的第一控制信号的温度 电极的值不超过预定温度的比较部分，以及用于控制栅极电压的目的，比较从外部发送的第一控制信号和第二控制信号的比较部分，并且选择作为控制信号之一的选择控制信号 可以限制电极的温度的信号。 栅极驱动电路根据选择控制信号控制栅极电压。
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公开(公告)号：US09467086B2
公开(公告)日：2016-10-11
申请号：US14399363
申请日：2012-07-12
CPC分类号： H02P27/06 , B60L11/12 , H02M1/08 , H02M3/3353 , H02M2001/0006 , H02M2001/007 , H02M2001/008 , H02M2001/325 , H02P5/74 , Y02T10/646 , Y02T10/7077
摘要： An object of the present invention is to achieve reductions in size and costs of a vehicle-mounted motor driving control board in a configuration which allows the redundancy of a power supply to be ensured. The vehicle-mounted motor driving control board is formed by one printed circuit board on which are formed two inverter driving circuits for driving two inverter circuits for three-phase motors, and a voltage step-up/step-down driving circuit for driving a voltage step-up/step-down circuit for supplying electric power to the inverter circuits. The vehicle-mounted motor driving control board further includes a first power supply circuit for supplying electric power to part of constituent circuits constituting the voltage step-up/step-down driving circuit and the two inverter driving circuits, and a second power supply circuit for supplying electric power to the remainder of the constituent circuits in the voltage step-up/step-down driving circuit and the two inverter driving circuits.
摘要翻译： 本发明的一个目的是在允许确保电源冗余的结构中实现车载电动机驱动控制板的尺寸和成本的降低。 车载电动机驱动控制基板由一个印刷电路板形成，其上形成有用于驱动三相电动机的两个逆变器电路的两个逆变器驱动电路，以及用于驱动电压的升压/降压驱动电路 用于向逆变器电路供电的升压/降压电路。 车载电动机驱动控制基板还包括：第一电源电路，用于向构成升压降压驱动电路的构成电路和两个逆变器驱动电路的一部分供电;以及第二电源电路， 向升压降压驱动电路和两个逆变器驱动电路中的其余构成电路供电。
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公开(公告)号：US09455718B2
公开(公告)日：2016-09-27
申请号：US14653822
申请日：2012-12-28
申请人： Mitsunori Aiko , Shintaro Araki
发明人： Mitsunori Aiko , Shintaro Araki
摘要： A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited. The gate drive circuit controls the gate voltage according to the selective control signal.
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公开(公告)号：US08749047B2
公开(公告)日：2014-06-10
申请号：US13310023
申请日：2011-12-02
IPC分类号： H01L23/48
CPC分类号： H02M7/003 , H01L23/3107 , H01L25/112 , H01L2225/1011 , H01L2225/1064 , H01L2924/0002 , H01L2924/00
摘要： A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.
摘要翻译： 功率模块包括具有集电极端子和从模制树脂向外延伸的发射极端子的第一半导体器件，其中集电极和发射极端子中的至少一个是从模制树脂的两个相对表面向外延伸的双边延伸端子， 以及具有与第一半导体器件相同结构的第二半导体器件。 第一半导体器件的双向延伸端子连接到第二半导体器件的双向延伸端子。
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