公开(公告)号：US08535444B2

公开(公告)日：2013-09-17

申请号：US12367751

申请日：2009-02-09

申请人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

发明人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

IPC分类号： C23C16/00

CPC分类号： C23C16/4583 ,  C23C16/44 ,  F27B17/0025 ,  H01L21/67109 ,  Y10T428/24479

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at least one sidewall insulating part surrounding the reaction vessel, a ceiling insulating part placed on the sidewall insulating part and comprising a plurality of stress relief grooves, and a heating element installed at an inner side of the sidewall insulating part.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括构造成处理基板的反应容器和加热装置。 加热装置包括围绕反应容器的至少一个侧壁绝缘部分，设置在侧壁绝缘部分上并包括多个应力释放槽的顶部绝缘部分和安装在侧壁绝缘部分的内侧的加热元件。

公开(公告)号：USD652395S1

公开(公告)日：2012-01-17

申请号：US29371213

申请日：2010-11-29

申请人： Masakazu Shimada ,  Takashi Nogami ,  Satoshi Aizawa ,  Seiyo Nakashima ,  Tomoyuki Yamada ,  Shinobu Sugiura ,  Yukinori Aburatani ,  Mitsuhiro Nagata

设计人： Masakazu Shimada ,  Takashi Nogami ,  Satoshi Aizawa ,  Seiyo Nakashima ,  Tomoyuki Yamada ,  Shinobu Sugiura ,  Yukinori Aburatani ,  Mitsuhiro Nagata

公开(公告)号：US20110281226A1

公开(公告)日：2011-11-17

申请号：US13101625

申请日：2011-05-05

申请人： Tetsuya KOSUGI ,  Hitoshi MURATA ,  Shinobu SUGIURA ,  Masaaki UENO

发明人： Tetsuya KOSUGI ,  Hitoshi MURATA ,  Shinobu SUGIURA ,  Masaaki UENO

IPC分类号： F16M11/00

CPC分类号： H01L21/67109

摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

摘要翻译： 提供一种用于半导体制造装置的加热器支撑装置，以通过防止支撑件与支架的损坏和分离来改善温度特性和预期寿命的均匀性，并且防止在附近的绝热效率的劣化 竖炉式天花板。 线圈形状的加热元件设置在物体周围。 支撑件垂直连接多个。 在各个支撑件之间形成椭圆形的空腔。 在各个支撑件的上表面和下表面中的一个上形成凹入插入件，并且在相应的支撑件的上表面和下表面中的另一个上形成凸形插入件。 凸形插入件插入配合凹入插入物。 通过将凹入插入件嵌入到凸插入件中，支撑件垂直连接成多个。

公开(公告)号：US20110021039A1

公开(公告)日：2011-01-27

申请号：US12838831

申请日：2010-07-19

申请人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu Sugiura ,  Masaaki UENO

发明人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu Sugiura ,  Masaaki UENO

IPC分类号： H01L21/26 ,  H05B3/02

CPC分类号： H01L21/67109

摘要： Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; a holding body disposed in the holding body receiving part and fixed to the insulating body; the heating element having a ring shape; the insulating body installed in a manner of surrounding the outer circumference of the heating element; and a fixation part configured to fix the heating element to an inner wall of the insulating body.

摘要翻译： 提供一种加热装置，基板处理装置以及半导体装置的制造方法。 加热装置包括：加热元件，其包括山形部分和谷部分，其以固定的两端交替连接成多个弯曲形状; 保持体接纳部，分别安装在谷部的端部，形成为宽度大于谷部宽度的切口部; 安装在所述加热元件的外周的绝缘体; 保持体，设置在所述保持体容纳部中并固定在所述绝缘体上; 所述加热元件具有环形形状; 所述绝缘体以围绕所述加热元件的外周的方式安装; 以及固定部，被配置为将所述加热元件固定到所述绝缘体的内壁。

公开(公告)号：US09779970B2

公开(公告)日：2017-10-03

申请号：US13101625

申请日：2011-05-05

申请人： Tetsuya Kosugi ,  Hitoshi Murata ,  Shinobu Sugiura ,  Masaaki Ueno

发明人： Tetsuya Kosugi ,  Hitoshi Murata ,  Shinobu Sugiura ,  Masaaki Ueno

IPC分类号： H01L21/22 ,  H01L21/67

CPC分类号： H01L21/67109

摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

公开(公告)号：US09418881B2

公开(公告)日：2016-08-16

申请号：US13192784

申请日：2011-07-28

申请人： Shinobu Sugiura ,  Masaaki Ueno ,  Kazuo Tanaka ,  Masashi Sugishita ,  Hideto Yamaguchi ,  Kenji Shirako

发明人： Shinobu Sugiura ,  Masaaki Ueno ,  Kazuo Tanaka ,  Masashi Sugishita ,  Hideto Yamaguchi ,  Kenji Shirako

IPC分类号： H01L21/67 ,  G05D23/19 ,  G05D23/20 ,  C23C14/54 ,  C23C16/458 ,  C23C16/52 ,  G05D23/22

CPC分类号： H01L21/67248 ,  C23C14/541 ,  C23C16/4584 ,  C23C16/52 ,  G05D23/1931 ,  G05D23/22 ,  H01L21/67109

摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.

摘要翻译： 提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。 基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性 的第一热电偶的温度检测性能高于第一热电偶的温度检测性能。

公开(公告)号：US20110021038A1

公开(公告)日：2011-01-27

申请号：US12748920

申请日：2010-03-29

申请人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu SUGIURA

发明人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu SUGIURA

IPC分类号： H01L21/26 ,  H05B3/02

CPC分类号： H01L21/324 ,  H01L21/67109

摘要： Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device, which can suppress differences between heating bodies, and simultaneously, can suppress shearing of a holder due to thermal deformation of the heating element. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; and a holding body disposed in the holding body receiving part and fixed to the insulating body.

摘要翻译： 提供一种加热装置，基板处理装置和半导体装置的制造方法，其能够抑制加热体之间的差异，同时能够抑制由于加热元件的热​​变形引起的保持器的剪切。 加热装置包括：加热元件，其包括山形部分和谷部分，其以固定的两端交替连接成多个弯曲形状; 保持体接纳部，分别安装在谷部的端部，形成为宽度大于谷部宽度的切口部; 安装在所述加热元件的外周的绝缘体; 以及保持体，其设置在所述保持体容纳部中并固定到所述绝缘体。

公开(公告)号：US09064912B2

公开(公告)日：2015-06-23

申请号：US12838831

申请日：2010-07-19

申请人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura ,  Masaaki Ueno

发明人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura ,  Masaaki Ueno

IPC分类号： H05B3/02 ,  H05B3/06 ,  H01L21/26 ,  H01L21/67

CPC分类号： H01L21/67109

摘要： A heating device includes: a heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape, and a holding body receiving part an end of the valley part, where a width of the holding body receiving part is greater than that of the valley part; an insulating body installed at an outer circumference of the heating element with both ends of the heating element fixed thereto; and a staple pin penetrating the holding body receiving part and a neighboring holdings body receiving part to fix the heating element to the insulating body, where the staple pin is dislocated with respect to a center of the holding body receiving part and an amount of dislocation of the staple pin varies according to a distance between the holding body receiving part and the both ends.

摘要翻译： 一种加热装置，包括：加热元件，其包括多个交替连接以形成曲折形状的山部和谷部;以及保持体容纳部，其中，所述保持体容纳部的宽度较大 比谷部分; 绝热体，其安装在所述加热元件的外周上，所述加热元件的两端固定在所述加热元件的外周; 以及穿过保持体接收部的钉销和相邻的保持体接收部，以将加热元件固定在绝缘体上，在该绝缘体处，钉销相对于保持体接收部的中心脱位， 钉销根据保持体接收部和两端之间的距离而变化。

公开(公告)号：US20120094010A1

公开(公告)日：2012-04-19

申请号：US13192784

申请日：2011-07-28

申请人： Shinobu SUGIURA ,  Masaaki UENO ,  Kazuo TANAKA ,  Masashi SUGISHITA ,  Hideto YAMAGUCHI ,  Kenji SHIRAKO

发明人： Shinobu SUGIURA ,  Masaaki UENO ,  Kazuo TANAKA ,  Masashi SUGISHITA ,  Hideto YAMAGUCHI ,  Kenji SHIRAKO

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： H01L21/67248 ,  C23C14/541 ,  C23C16/4584 ,  C23C16/52 ,  G05D23/1931 ,  G05D23/22 ,  H01L21/67109

摘要： Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple

摘要翻译： 提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。 基板处理装置包括加热装置，其构造成加热容纳基板的处理室; 第一温度检测装置，被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置，被配置为使用第二热电偶检测关于加热装置的温度; 控制单元，被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置，被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元，使得控制单元在第一控制模式和第二控制模式之间切换，其中耐热性 的第一热电偶的温度检测性能比第一热电偶的温度检测性能高

公开(公告)号：US20090209113A1

公开(公告)日：2009-08-20

申请号：US12367751

申请日：2009-02-09

申请人： Hitoshi MURATA ,  Tetsuya Kosugi ,  Shinobu Sugiura

发明人： Hitoshi MURATA ,  Tetsuya Kosugi ,  Shinobu Sugiura

IPC分类号： H01L21/00 ,  C23C16/00 ,  B32B3/00

CPC分类号： C23C16/4583 ,  C23C16/44 ,  F27B17/0025 ,  H01L21/67109 ,  Y10T428/24479

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at least one sidewall insulating part surrounding the reaction vessel, a ceiling insulating part placed on the sidewall insulating part and comprising a plurality of stress relief grooves, and a heating element installed at an inner side of the sidewall insulating part.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括构造成处理基板的反应容器和加热装置。 加热装置包括围绕反应容器的至少一个侧壁绝缘部分，设置在侧壁绝缘部分上并包括多个应力释放槽的顶部绝缘部分和安装在侧壁绝缘部分的内侧的加热元件。