公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US20200075768A1

公开(公告)日：2020-03-05

申请号：US16495361

申请日：2018-03-22

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/861 ,  H01L21/02 ,  C23C22/06 ,  C23C22/82

摘要： A coating liquid for forming a metal oxide film, the coating liquid including: a metal source, which is at least one selected from the group consisting of inorganic salts, oxides, hydroxides, metal complexes, and organic acid salts; at least one alkali selected from the group consisting of organic alkalis and inorganic alkalis; and a solvent.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US20190027608A1

公开(公告)日：2019-01-24

申请号：US16131760

申请日：2018-09-14

申请人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Shinji MATSUMOTO ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  H01L51/00

摘要： A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

公开(公告)号：US20170200606A1

公开(公告)日：2017-07-13

申请号：US15401157

申请日：2017-01-09

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L21/02 ,  H01L29/861 ,  G09G5/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L21/02565 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/861 ,  H01L2251/533

摘要： An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO) (ZO)mi(BO) (ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

公开(公告)号：US20170162172A1

公开(公告)日：2017-06-08

申请号：US15371500

申请日：2016-12-07

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji Sone ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： G09G5/10 ,  G09G5/00 ,  H01L27/12

CPC分类号： G09G3/3225 ,  G09G5/003 ,  G09G5/10 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3225 ,  H01L29/4908 ,  H01L29/7869

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

公开(公告)号：US20160279939A1

公开(公告)日：2016-09-29

申请号：US15081307

申请日：2016-03-25

申请人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

发明人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

IPC分类号： B41J2/14

CPC分类号： B41J2/1433 ,  B41J2/06 ,  B41J2002/14491

摘要： A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

摘要翻译： 一种用于液滴喷射头喷射带电液滴的喷嘴板，包括设置在喷嘴面上的排出口; 填充有从排出口排出的液体的排出室; 喷嘴孔，其从所述排出口沿所述喷嘴板的厚度方向延伸并与所述排出室连通; 设置在所述排出室或所述喷嘴孔中的第一电极并接触所述液滴的一部分; 以及设置在喷嘴面上并且既不连接到第一电极也不与液滴接触的第二电极。

公开(公告)号：US20150349138A1

公开(公告)日：2015-12-03

申请号：US14440969

申请日：2013-11-27

申请人： Yuji SONE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Mikiko TAKADA ,  Shinji MATSUMOTO ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Yukiko ABE ,  RICO COMPANY, LTD

发明人： Yuji SONE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Mikiko TAKADA ,  Shinji MATSUMOTO ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Yukiko ABE

IPC分类号： H01L29/786 ,  G09G3/38 ,  G09G3/30 ,  G09G3/36 ,  H01L27/12 ,  G09G3/34

CPC分类号： H01L29/78606 ,  G09G3/30 ,  G09G3/344 ,  G09G3/348 ,  G09G3/3696 ,  G09G3/38 ,  G09G2300/0426 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L29/7869

摘要： To provide a field-effect transistor, containing: a substrate; a protective layer; a gate insulating layer formed between the substrate and the protective layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is formed at an opposite side to the side where the semiconductor layer is provided, with the gate insulating layer being between the gate electrode and the semiconductor layer, and is in contact with the gate insulating layer, wherein the protective layer contains a metal oxide composite, which contains at least Si and alkaline earth metal.

摘要翻译： 提供场效应晶体管，其包含：基板; 保护层; 形成在所述基板和所述保护层之间的栅极绝缘层; 源极电极和漏极电极，其形成为与栅极绝缘层接触; 至少形成在所述源电极和所述漏电极之间并与所述栅极绝缘层，所述源电极和所述漏电极接触的半导体层; 以及栅电极，其形成在与设置有半导体层的一侧相反的一侧，所述栅极绝缘层位于所述栅电极和所述半导体层之间，并且与所述栅绝缘层接触，其中所述保护 层含有至少含有Si和碱土金属的金属氧化物复合物。

公开(公告)号：US10748784B2

公开(公告)日：2020-08-18

申请号：US16047374

申请日：2018-07-27

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  H01L21/02 ,  H01L21/441 ,  H01L21/4763 ,  H01L29/417 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32

摘要： A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

公开(公告)号：US20190280098A1

公开(公告)日：2019-09-12

申请号：US16425446

申请日：2019-05-29

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  C09D1/00 ,  C09D5/00

摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.