公开(公告)号：US20210328046A1

公开(公告)日：2021-10-21

申请号：US17297267

申请日：2019-11-26

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Minehide KUSAYANAGI

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/786

摘要： A coating liquid for forming an oxide, the coating liquid including: silicon (Si); and B element, which is at least one alkaline earth metal, wherein when a concentration of an element of the Si is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/(1×102) mg/L or less and a total of concentrations of chromium (Cr), molybdenum (Mo), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/(1×102) mg/L or less.

公开(公告)号：US10748784B2

公开(公告)日：2020-08-18

申请号：US16047374

申请日：2018-07-27

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  H01L21/02 ,  H01L21/441 ,  H01L21/4763 ,  H01L29/417 ,  H01L21/3213 ,  H01L29/45 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32

摘要： A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

公开(公告)号：US20190280098A1

公开(公告)日：2019-09-12

申请号：US16425446

申请日：2019-05-29

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI ,  Yuichi ANDO

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  C09D1/00 ,  C09D5/00

摘要： A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.

公开(公告)号：US20190245090A1

公开(公告)日：2019-08-08

申请号：US16318597

申请日：2017-07-14

申请人： Minehide KUSAYANAGI ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE

发明人： Minehide KUSAYANAGI ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45

CPC分类号： H01L29/7869 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621

摘要： A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed between the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, the source electrode and the drain electrode each including a metal region formed of a metal and an oxide region formed of one or more metal oxides, and a part of the oxide region in each of the source electrode and the drain electrode being in contact with the active layer, and rest of the oxide region being in contact with one or more components other than the active layer.

公开(公告)号：US10236349B2

公开(公告)日：2019-03-19

申请号：US15676161

申请日：2017-08-14

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Shinji Matsumoto ,  Yuji Sone ,  Mikiko Takada ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  G09G3/32 ,  C01G3/02 ,  C01F5/06 ,  C01F11/04 ,  H01L29/786 ,  H01L29/04 ,  H01L27/32

摘要： A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu2O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu2O and x and y satisfy the following expressions: 0≤x

公开(公告)号：US10236304B2

公开(公告)日：2019-03-19

申请号：US15369678

申请日：2016-12-05

申请人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/00 ,  H01L27/12 ,  H01L29/786

摘要： A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

公开(公告)号：US20190051752A1

公开(公告)日：2019-02-14

申请号：US15759698

申请日：2016-09-09

申请人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

发明人： Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Sadanori ARAE ,  Minehide KUSAYANAGI

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/51

摘要： A coating liquid for forming an n-type oxide semiconductor film, the coating liquid including: a Group A element, which is at least one selected from the group consisting of Sc, Y, Ln, B, Al, and Ga; a Group B element, which is at least one of In and Tl; a Group C element, which is at least one selected from the group consisting of Group 4 elements, Group 5 elements, Group 6 elements, Group 7 elements, Group 8 elements, Group 9 elements, Group 10 elements, Group 14 elements, Group 15 elements, and Group 16 elements; and a solvent.

公开(公告)号：US20180358236A1

公开(公告)日：2018-12-13

申请号：US16047374

申请日：2018-07-27

申请人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

发明人： Sadanori ARAE ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Ryoichi SAOTOME ,  Minehide KUSAYANAGI

IPC分类号： H01L21/4763 ,  H01L29/66 ,  H01L21/02 ,  H01L21/441 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L27/12

摘要： A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

公开(公告)号：US20180331196A1

公开(公告)日：2018-11-15

申请号：US16029301

申请日：2018-07-06

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/49 ,  H01L29/788 ,  H01L29/786 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/3233 ,  G09G3/20 ,  G02F1/163 ,  H01L27/32 ,  H01L27/108

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US20180226046A1

公开(公告)日：2018-08-09

申请号：US15939665

申请日：2018-03-29

申请人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE

发明人： Ryoichi SAOTOME ,  Naoyuki UEDA ,  Yuki NAKAMURA ,  Yukiko ABE ,  Shinji MATSUMOTO ,  Yuji SONE ,  Sadanori ARAE

IPC分类号： G09G3/36 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC分类号： G09G3/3696 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2310/0278 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/7869

摘要： A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.