公开(公告)号：US20220367616A1

公开(公告)日：2022-11-17

申请号：US17773245

申请日：2021-10-09

Applicant: SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORPORATION

Inventor： Yin DAI ,  Wenzhen REN

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10

Abstract: A super-junction device and a method of fabricating such a device are disclosed, in which a pillar of a second conductivity type situated at an interface between a transition region and a core region is narrowed in width across at least an upper thickness thereof, thereby reducing peak electric field strength in the transition region, increasing voltage endurance of the transition region and preventing the occurrence of avalanche breakdown first in the transition region. Additionally, a dopant ion concentration profile increasing in the direction from the transition region to the core region is created across upper portions of some pillars of the second conductivity type in the core region, which increases the presence of the dopant of the second conductivity type around the surface of the core region and thus stops a vertical electric field before it can reach wells of the second conductivity type. That is, an effective epitaxial thickness of the core region is reduced, which results in lower voltage endurance thereof. In this way, it is ensured that avalanche breakdown occurs first in the core region, resulting in improved EAS performance.

公开(公告)号：US20230344400A1

公开(公告)日：2023-10-26

申请号：US17799446

申请日：2022-01-19

Applicant: SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORPORATION

Inventor： Xueli FENG ,  Shaohua XIANG ,  Chong WANG ,  Weizhong SHAN

IPC: H03H3/04 ,  H03H9/56 ,  H03H9/10

CPC classification number: H03H3/04 ,  H03H9/564 ,  H03H9/562 ,  H03H9/1042 ,  H03H2003/045

Abstract: An electronic device and a method of forming the same are disclosed. An emitter resonator and a reception cap cavity are formed on and in a first wafer, and an emitter cap cavity and a reception resonator are formed in and on a second wafer. After bonding together the first and second wafers, an emitter filter is formed in an emission region, and a reception filter is formed in a receiving region. The method provided in the present invention not only can simplify the fabrication process of the device and improve its accuracy and stability, but also facilitates integration of the emitter and receives filters in a same chip, which results in a higher degree of integration of the device and a more compact package size thereof.

公开(公告)号：US12212299B2

公开(公告)日：2025-01-28

申请号：US17799446

申请日：2022-01-19

Applicant: SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORPORATION

Inventor： Xueli Feng ,  Shaohua Xiang ,  Chong Wang ,  Weizhong Shan

IPC: H03H3/04 ,  H03H9/10 ,  H03H9/56

Abstract: An electronic device and a method of forming the same are disclosed. An emitter resonator and a reception cap cavity are formed on and in a first wafer, and an emitter cap cavity and a reception resonator are formed in and on a second wafer. After bonding together the first and second wafers, an emitter filter is formed in an emission region, and a reception filter is formed in a receiving region. The method provided in the present invention not only can simplify the fabrication process of the device and improve its accuracy and stability, but also facilitates integration of the emitter and receives filters in a same chip, which results in a higher degree of integration of the device and a more compact package size thereof.

公开(公告)号：US20240027488A1

公开(公告)日：2024-01-25

申请号：US18255501

申请日：2021-10-21

Applicant: SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORPORATION

Inventor： Zhaolin ZHANG ,  Jihui XU

IPC: G01P15/08 ,  G01P15/125 ,  B81C1/00

CPC classification number: G01P15/0802 ,  G01P15/125 ,  B81C1/00166 ,  B81C2201/0125 ,  B81C2201/0132

Abstract: In a forming method of an inertial sensor, a trench is formed in a conducting material layer, so that a formed movable comb tooth structure can be spaced from the conducting material layer. A thin film layer is further arranged at a bottom of the trench. The thin film layer can be used not only for realizing etching blocking, but also for fixing comb teeth of the movable comb tooth structure while executing an etching process for forming the movable comb tooth structure, thereby avoiding damage to side walls of the comb teeth due to torsion of the comb teeth. In addition, a thickness of the thin film layer can be made small, and correspondingly, the thin film layer can be removed by a small etching amount, without causing a large amount of erosion to other film layers, which is conducive to guaranteeing stability of modules in a device.

公开(公告)号：US20230118623A1

公开(公告)日：2023-04-20

申请号：US17911597

申请日：2022-02-10

Applicant: SEMICONDUCTOR MANUFACTURING ELECTRONICS (SHAOXING) CORPORATION

Inventor： Xiang LI ,  Maojie CONG ,  Zhiping XIE ,  Zhiguo KAN ,  Xuanjie LIU

IPC: H01L21/20 ,  H01L21/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

Abstract: A buffer layer on a silicon carbide substrate and a method of forming the same are disclosed. The buffer layer includes at least two layers of silicon carbide films, in which at least each lower one is doped at a top surface thereof with predetermined ions. As a result, at the top surface of the silicon carbide film, a barrier with different parameter is formed, which can block dislocation defects that have spread into the silicon carbide film from further upward propagation in the silicon carbide film.