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公开(公告)号：US06294018B1
公开(公告)日：2001-09-25
申请号：US09396035
申请日：1999-09-15
申请人： Robert Alan Hamm , Rose Fasano Kopf , Christopher James Pinzone , Robert William Ryan , Alaric Tate
发明人： Robert Alan Hamm , Rose Fasano Kopf , Christopher James Pinzone , Robert William Ryan , Alaric Tate
IPC分类号： C30B2504
CPC分类号： H01L29/66318 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The specification describes a lithographic technique in which alignment marks are defined in a first semiconductor layer and the alignment marks are then covered with a protective SiO2 layer. After subsequent semiconductor layer growth steps, which selectively deposit on the former semiconductor layer but not on the protective layer, the alignment marks remain undistorted and visible to the exposure tool for subsequent processing.
摘要翻译： 本说明书描述了一种光刻技术，其中对准标记被限定在第一半导体层中，并且对准标记然后被保护性SiO 2层覆盖。 在随后的半导体层生长步骤之后，其选择性地沉积在前半导体层上但不在保护层上，对准标记保持不变，并且对于曝光工具可见，用于后续处理。
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公开(公告)号：US6156665A
公开(公告)日：2000-12-05
申请号：US59359
申请日：1998-04-13
IPC分类号： H01L21/027 , H01L21/033 , H01L21/306 , H01L21/302
CPC分类号： H01L21/0331 , H01L21/0272 , H01L21/0332 , H01L21/30617 , H01L21/30621
摘要： The specification describes a trilevel resist technique for defining metallization patterns by lift-off. The trilevel resist comprises two standard photoresist levels separated by a thin silicon oxide layer with approximate composition SiO.sub.2.
摘要翻译： 本说明书描述了通过剥离来定义金属化图案的三层抗蚀剂技术。 三层抗蚀剂包含由具有近似组成SiO 2的薄氧化硅层分离的两个标准光致抗蚀剂级。
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公开(公告)号：US5932379A
公开(公告)日：1999-08-03
申请号：US28966
申请日：1998-02-24
CPC分类号： H01L22/20 , Y10S430/143 , Y10S430/167
摘要： The specification describes a technique for repairing wafer fractures that occur during wafer fabrication. The fractured pieces are joined edge-to-edge at the fracture line and bonded with epoxy adhesive. The method succeeds because the dimensions of the fracture line after bonding is within the reregistration tolerance of commercial step-and-repeat cameras and the reregistration capability of the camera allows normal exposure of sites that do not intersect the fracture line.
摘要翻译： 本说明书描述了在晶片制造期间发生的晶片裂缝的修复技术。 断裂片在断裂线处边缘到边缘连接并用环氧树脂粘合剂粘结。 该方法成功，因为接合后断裂线的尺寸在商业步进和重复相机的重新注册容限内，并且相机的重新注册能力允许不与断裂线相交的位点的正常曝光。
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公开(公告)号：US06855613B1
公开(公告)日：2005-02-15
申请号：US09433204
申请日：1999-11-04
IPC分类号： H01L21/331 , H01L31/328
CPC分类号： H01L29/66318
摘要： A method of fabricating a III-V heterostructure semiconductor device. The method includes the steps of forming at least one conductive post overlying a semiconductor region to form a structure, encapsulating the structure and the conductive post to form a planarized cured passivation layer, and exposing the conductive post through the planarized cured passivation layer to form the semiconductor device.
摘要翻译： 一种制造III-V异质结构半导体器件的方法。 该方法包括以下步骤：形成覆盖半导体区域的至少一个导电柱以形成结构，封装该结构和导电柱以形成平坦化的固化钝化层，以及使导电柱穿过平坦化的固化钝化层，形成 半导体器件。
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公开(公告)号：US6165859A
公开(公告)日：2000-12-26
申请号：US255845
申请日：1999-02-23
IPC分类号： H01L21/331 , H01L29/45 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/452 , H01L29/7371
摘要： The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd--Pt--Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
摘要翻译： 该说明书描述了针对DHBT器件中的掩埋发射极 - 基极结的扩散接触而优化的金属接触材料。 金属接触材料是Pd-Pt-Au的多层结构，其给出了对掩埋基底层的低电阻接触所需的临界扩散特性，而不会与集电极层短路。
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公开(公告)号：US5907165A
公开(公告)日：1999-05-25
申请号：US71006
申请日：1998-05-01
IPC分类号： H01L21/331 , H01L29/45 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66318 , H01L29/452 , H01L29/7371
摘要： The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
摘要翻译： 该说明书描述了针对DHBT器件中的掩埋发射极 - 基极结的扩散接触而优化的金属接触材料。 金属接触材料是Pd-Pt-Au的多层结构，其给出了对掩埋基底层的低电阻接触所需的临界扩散特性，而不会与集电极层短路。
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7.发明授权Method of manufacturing schottky gate transistor utilizing alignment techniques with multiple photoresist layers 有权利用具有多个光致抗蚀剂层的对准技术制造肖特基栅极晶体管的方法
公开(公告)号：US6139995A
公开(公告)日：2000-10-31
申请号：US523210
申请日：2000-03-10
IPC分类号： G03F9/00 , H01L21/027 , H01L21/285 , H01L21/335
CPC分类号： H01L29/66462 , G03F9/708 , G03F9/7084 , H01L21/0274 , H01L21/28587
摘要： The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.
摘要翻译： 本说明书描述了使用多次曝光形成z维图案的光刻工艺。 使用与在第一次曝光期间形成的对准标记的潜像对准的光掩模进行不同厚度级别的多次曝光。 潜像对于商业步进机的对准系统是可见的。
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8.发明授权Alignment techniques for photolithography utilizing multiple photoresist layers 失效利用多个光致抗蚀剂层的光刻对准技术
公开(公告)号：US6042975A
公开(公告)日：2000-03-28
申请号：US111534
申请日：1998-07-08
IPC分类号： G03F9/00 , H01L21/027 , H01L21/285 , H01L21/335
CPC分类号： H01L29/66462 , G03F9/708 , G03F9/7084 , H01L21/0274 , H01L21/28587
摘要： The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.
摘要翻译： 本说明书描述了使用多次曝光形成z维图案的光刻工艺。 使用与在第一次曝光期间形成的对准标记的潜像对准的光掩模进行不同厚度级别的多次曝光。 潜像对于商业步进机的对准系统是可见的。
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