Chemical mechanical polishing pad
    1.
    发明授权
    Chemical mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号:US08053521B2

    公开(公告)日:2011-11-08

    申请号:US12278103

    申请日:2007-01-30

    摘要: The present invention relates to polishing pads, including at least 60 to 99 parts by weight of a polymer matrix (A) having 1,2-polybutadiene; and 1 to 40 parts by weight of component (B) having a copolymer having a polyether block, where the total amount of the polishing pad is 100 parts by mass, polymer matrix (A) includes 1,2-polybutadiene in an amount of at least 60 parts by weight, relative to 100 parts by mass of the polishing pad, component (B) includes the copolymer having a polyether block in an amount of at most 40 parts by weight relative to 100 parts by mass of the polishing pad, and the polishing pads have a surface resistivity of 2.6×107 to 9.9×1013Ω.

    摘要翻译: 本发明涉及抛光垫,包括至少60至99重量份的具有1,2-聚丁二烯的聚合物基质(A); 和1〜40重量份的具有聚醚嵌段的共聚物的组分(B),其中抛光垫的总量为100质量份,聚合物基质(A)包括一定量的1,2-聚丁二烯 相对于抛光垫100质量份,成分(B)相对于100质量份至少为60重量份,成分(B)相对于抛光垫100质量份,含有聚醚嵌段的配合量为40质量份以下的共聚物, 抛光垫的表面电阻率为2.6×107〜9.9×1013&OHgr。

    POLYURETHANE, COMPOSITION FOR FORMATION OF POLISHING LAYERS THAT CONTAINS SAME, PAD FOR CHEMICAL MECHANICAL POLISHING, AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME
    2.
    发明申请
    POLYURETHANE, COMPOSITION FOR FORMATION OF POLISHING LAYERS THAT CONTAINS SAME, PAD FOR CHEMICAL MECHANICAL POLISHING, AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME 审中-公开
    聚氨酯,用于形成包含相同的抛光层的组合物,用于化学机械抛光的胶料,以及使用其的化学机械抛光方法

    公开(公告)号:US20120083187A1

    公开(公告)日:2012-04-05

    申请号:US13375849

    申请日:2010-05-31

    摘要: A polyurethane is produced by reacting a mixture including at least (A) a diisocyanate, (B) a polyol, and (C) a chain extender, the polyol (B) having the number average molecular weight of 400 to 5000, the chain extender (C) including (C1) a compound shown by the following general formula (1) and (C2) a compound shown by the following general formula (2), the compound (C1) and the compound (C2) having a number average molecular weight of less than 400, and a ratio “M1/(M1+M2)” calculated by using the number of moles (M1) of the compound (C1) and the number of moles (M2) of the compound (C2) being 0.25 to 0.9. HO—(CR1R2)2m+1—OH  (1) HO—(CR3R4)2n—OH  (2)

    摘要翻译: 聚氨酯通过至少包含(A)二异氰酸酯,(B)多元醇和(C)扩链剂的混合物,数均分子量为400〜5000的多元醇(B),扩链剂 (C)包括(C1)由以下通式(1)表示的化合物和(C2)由以下通式(2)表示的化合物,化合物(C1)和化合物(C2)的数均分子量 重量小于400,通过使用化合物(C1)的摩尔数(M1)和化合物(C2)的摩尔数(M2)计算的比例“M1 /(M1 + M2)”为0.25 至0.9。 HO-(CR1R2)2m + 1-OH(1)HO-(CR3R4)2n-OH(2)

    Method for producing chemical mechanical polishing pad
    3.
    发明授权
    Method for producing chemical mechanical polishing pad 有权
    化学机械抛光垫的生产方法

    公开(公告)号:US07790788B2

    公开(公告)日:2010-09-07

    申请号:US12253349

    申请日:2008-10-17

    IPC分类号: D21H19/58 C08B37/02 B24D11/00

    摘要: There is provided a method for producing a chemical mechanical polishing pad, the method comprising the steps of (1) producing a sheet-shaped polymer molded article and (2) irradiating the sheet-shaped polymer molded article with an electron beam within an irradiation dose of 10 to 400 kGy.A chemical mechanical polishing pad produced by the above method has advantages that it is excellent in removal rate and scratches and in-plane uniformity on a polished surface and that it shows a stable removal rate even when polishing a number of objects to be polished successively.

    摘要翻译: 提供了一种生产化学机械抛光垫的方法,该方法包括以下步骤:(1)制备片状聚合物模塑制品,和(2)在辐射剂量内用电子束照射片状聚合物模塑制品 10到400 kGy。 通过上述方法制造的化学机械抛光垫具有在抛光表面上的去除率和划痕和面内均匀性优异的优点,即使在连续研磨多个待抛光物体时也能显示出稳定的去除率。

    METHOD FOR PRODUCING CHEMICAL MECHANICAL POLISHING PAD
    4.
    发明申请
    METHOD FOR PRODUCING CHEMICAL MECHANICAL POLISHING PAD 有权
    生产化学机械抛光垫的方法

    公开(公告)号:US20090104856A1

    公开(公告)日:2009-04-23

    申请号:US12253349

    申请日:2008-10-17

    摘要: There is provided a method for producing a chemical mechanical polishing pad, the method comprising the steps of (1) producing a sheet-shaped polymer molded article and (2) irradiating the sheet-shaped polymer molded article with an electron beam within an irradiation dose of 10 to 400 kGy.A chemical mechanical polishing pad produced by the above method has advantages that it is excellent in removal rate and scratches and in-plane uniformity on a polished surface and that it shows a stable removal rate even when polishing a number of objects to be polished successively.

    摘要翻译: 提供了一种生产化学机械抛光垫的方法,该方法包括以下步骤:(1)制备片状聚合物模塑制品,和(2)在辐射剂量内用电子束照射片状聚合物模塑制品 10到400 kGy。 通过上述方法制造的化学机械抛光垫具有在抛光表面上的去除率和划痕和面内均匀性优异的优点,即使在连续研磨多个待抛光物体时也能显示出稳定的去除率。

    CHEMICAL MECHANICAL POLISHING PAD
    6.
    发明申请
    CHEMICAL MECHANICAL POLISHING PAD 有权
    化学机械抛光垫

    公开(公告)号:US20090036045A1

    公开(公告)日:2009-02-05

    申请号:US12278103

    申请日:2007-01-30

    IPC分类号: B24B9/00

    摘要: A chemical mechanical polishing pad which provides a high removal rate, can suppress the production of a scratch on the polished surface completely and can achieve high in-plane uniformity in the amount of polishing of the polished surface.The chemical mechanical polishing pad has a surface resistivity of its polishing layer of 1.0×107 to 9.9×1013Ω. The polishing layer is made of a composition containing (A) a polymer matrix component having a volume resistivity of 1.0×1013 to 9.9×1017 Ω·cm and (B) a component having a volume resistivity of 1.0×106 to 9.9×1012 Ω·cm.

    摘要翻译: 提供高去除率的化学机械抛光垫可以完全抑制抛光表面上的划痕的产生,并且可以实现抛光表面的抛光量的高的面内均匀性。 化学机械抛光垫的抛光层的表面电阻率为1.0×10 7至9.9×10 13 O。 研磨层由含有(A)体积电阻率为1.0×10 13〜9.9×10 17Ω·cm·cm的聚合物基质成分的组合物和(B)体积电阻率为1.0×10 6〜9.9×10 12Ω·cm的组分构成。

    COMPOSITION FOR FORMING POLISHING LAYER OF CHEMICAL MECHANICAL POLISHING PAD, CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
    7.
    发明申请
    COMPOSITION FOR FORMING POLISHING LAYER OF CHEMICAL MECHANICAL POLISHING PAD, CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD 有权
    用于形成化学机械抛光垫,化学机械抛光垫和化学机械抛光方法的抛光层组合物

    公开(公告)号:US20090191795A1

    公开(公告)日:2009-07-30

    申请号:US12357706

    申请日:2009-01-22

    摘要: Provided is a composition for forming a polishing layer of a chemical mechanical polishing pad having polishing characteristics such as a high polishing rate, an excellent planarity of the polished object and less scratches of the polished object.The above composition for forming a polishing layer of a chemical mechanical polishing pad comprises (A) a polyurethane having a carbon-carbon double bond on a side chain and (B) a cross-linking agent. The polyurethane (A) is preferably a thermoplastic polyurethane (A′) obtained by mixing at least the following components (a11) to (a13) and component (a2) in a proportion satisfying the following conditions (1) and (2) and reacting them: (a11) an oligomer which has one or more hydroxyl groups and one or more carbon-carbon double bonds and which has a number average molecular weight of 500 to 2500, (a12) an oligomer which has two or more hydroxyl groups and either one or both of an ether bond and an ester bond and which has a number average molecular weight of 500 to 2500 and is different from the component (a11), (a13) a monomer having two hydroxyl groups and (a2) a monomer having two isocyanate groups; and (1) a value of M-1/M-OH is 0.85 to 1.10, and (2) a value of M-2/M-OH is 0.45 to 0.80, wherein M-1 is the number of isocyanate groups contained in the component (a2), M-2 is the number of hydroxyl groups contained in the component (a13) and M-OH is the total number of hydroxyl groups contained in the components (a11), (a12) and (a13).

    摘要翻译: 提供一种用于形成化学机械抛光垫的抛光层的组合物,其具有抛光特性如抛光速度高,抛光对象的优良平面度和抛光对象的划痕少。 用于形成化学机械抛光垫的抛光层的上述组合物包括(A)侧链上具有碳 - 碳双键的聚氨酯和(B)交联剂。 聚氨酯(A)优选为通过以满足以下条件(1)和(2)的比例混合至少以下成分(a11)〜(a13)和成分(a2)而得到的热塑性聚氨酯(A'), 它们:(a11)具有一个或多个羟基和一个或多个碳 - 碳双键且数均分子量为500至2500的低聚物,(a12)具有两个或更多个羟基的低聚物和 醚键和酯键中的一种或两种,并且其数均分子量为500至2500,并且不同于组分(a11),(a13)具有两个羟基的单体和(a2)具有两个羟基的单体 异氰酸酯基; 和(1)M-1 / M-OH的值为0.85〜1.10,(2)M-2 / M-OH的值为0.45〜0.80,M-1为 组分(a2),M-2是组分(a13)中包含的羟基数,M-OH是组分(a11),(a12)和(a13)中所含羟基的总数。