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公开(公告)号：US08741737B2
公开(公告)日：2014-06-03
申请号：US11858753
申请日：2007-09-20
IPC分类号： H01L21/30
CPC分类号： H01L25/0657 , B23K35/262 , B23K35/3013 , B23K35/3613 , C22C13/00 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/31 , H01L24/81 , H01L24/83 , H01L24/90 , H01L25/50 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/11901 , H01L2224/11902 , H01L2224/13021 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/16 , H01L2224/29109 , H01L2224/29111 , H01L2224/8121 , H01L2224/81815 , H01L2224/83194 , H01L2224/838 , H01L2225/06517 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/01083 , H01L2924/00014 , H01L2924/00
摘要： Described are three-dimensional stacked semiconductor structures having one or more vertical interconnects. Vertical stacking relies on vertical interconnects and wafer bonding using a patternable polymer. The polymer is preferably lithographically patternable and photosensitive. Curing of the polymer is preselected from about 35% to up to about 100%, depending on a desired outcome. When fabricated, such vertically stacked structures include electrical interconnects provided by solder reflow. Solder reflow temperature is bounded by a curing and glass transition temperatures of a polymer used for bonding.
摘要翻译： 描述了具有一个或多个垂直互连的三维堆叠半导体结构。 垂直堆叠依赖于使用可图案化聚合物的垂直互连和晶圆接合。 聚合物优选是光刻图案和感光的。 根据期望的结果，聚合物的固化预先选自约35％至高达约100％。 当制造时，这种垂直堆叠的结构包括通过回流焊提供的电互连。 焊接回流温度受用于粘合的聚合物的固化和玻璃化转变温度的限制。
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公开(公告)号：US20080122115A1
公开(公告)日：2008-05-29
申请号：US11858753
申请日：2007-09-20
CPC分类号： H01L25/0657 , B23K35/262 , B23K35/3013 , B23K35/3613 , C22C13/00 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/31 , H01L24/81 , H01L24/83 , H01L24/90 , H01L25/50 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/11901 , H01L2224/11902 , H01L2224/13021 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/16 , H01L2224/29109 , H01L2224/29111 , H01L2224/8121 , H01L2224/81815 , H01L2224/83194 , H01L2224/838 , H01L2225/06517 , H01L2924/01005 , H01L2924/01006 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/01083 , H01L2924/00014 , H01L2924/00
摘要： Described are three-dimensional stacked semiconductor structures having one or more vertical interconnects. Vertical stacking relies on vertical interconnects and wafer bonding using a patternable polymer. The polymer is preferably lithographically patternable and photosensitive. Curing of the polymer is preselected from about 35% to up to about 100%, depending on a desired outcome. When fabricated, such vertically stacked structures include electrical interconnects provided by solder reflow. Solder reflow temperature is bounded by a curing and glass transition temperatures of a polymer used for bonding.
摘要翻译： 描述了具有一个或多个垂直互连的三维堆叠半导体结构。 垂直堆叠依赖于使用可图案化聚合物的垂直互连和晶圆接合。 聚合物优选是光刻图案和感光的。 根据期望的结果，聚合物的固化预先选自约35％至高达约100％。 当制造时，这种垂直堆叠的结构包括通过回流焊提供的电互连。 焊接回流温度受用于粘合的聚合物的固化和玻璃化转变温度的限制。
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