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    METHOD FOR OPTIMIZING RADIATION BEAM INTENSITY PROFILE SHAPE USING DUAL MULTIPLE APERTURE DEVICES
    1.
    发明申请
    METHOD FOR OPTIMIZING RADIATION BEAM INTENSITY PROFILE SHAPE USING DUAL MULTIPLE APERTURE DEVICES 有权

    公开(公告)号：US20220088417A1

    公开(公告)日：2022-03-24

    申请号：US17545030

    申请日：2021-12-08

    申请人： THE JOHNS HOPKINS UNIVERSITY ,  Koninklijke Philips NV.

    发明人： Joseph Webster Stayman ,  Aswin John Mathews ,  Reuven Levinson

    IPC分类号： A61N5/10 ,  G01N23/00 ,  G21K1/10

    摘要： The present invention is directed to multiple aperture devices (MADs) for beam shaping in x-ray imaging. Two or more of these binary filters can be placed in an x-ray beam in series to permit a large number of x-ray fluence profiles. However, the relationship between particular MAD designs and the achievable fluence patterns is complex. The present invention includes mathematical and physical models that are used within an optimization framework to find optimal MAD designs. Specifically, given a set of target fluence patterns, the present invention finds, for example, a dual MAD design that is a “best fit” in generating the desired fluence patterns. This process provides a solution for both the design of MAD filters as well as the control actuation that is required (relative motion between MADs) that needs to be specified as part of the operation of a MAD-based fluence field modulation system.

    Methods of manufacturing semiconductor devices
    2.
    发明授权
    Methods of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US3841917A

    公开(公告)日：1974-10-15

    申请号：US28545672

    申请日：1972-08-31

    申请人： PHILIPS NV

    发明人： SHANNON J

    IPC分类号： H01L21/00 ,  H01L21/22 ,  H01L29/808 ,  H01L7/54

    CPC分类号： H01L21/263 ,  H01L21/00 ,  H01L21/22 ,  H01L29/808 ,  H01L29/8083

    摘要： A method of manufacturing a semiconductor device, in which in a semiconductor body comprising a boundary between a higher doped region and a lower doped region radiation enhanced diffusion of impurity is effected across the boundary from the higher doped region into the lower doped region to form in the lower doped region a further region the lateral extent of which is substantially constant, said radiation enhanced diffusion being effected by directing a beam of energetic particles towards the boundary from the side thereof at which the lower doped region is present and to produce damage of the crystal structure in the lower doped region at least in the vicinity of the boundary, the orientation of the semiconductor body with respect to the incident beam and the energy of the particles being selected so as to produce channelling of the semiconductor body crystal lattice by the particles with a channelling range in the lower doped region which extends at least to the boundary. The method may be carried out with proton bombardment and particularly some novel junction field effect transistor structures are formed having channel portions of precisely controlled dimensions. The method may be used in the manufacture of a buried channel junction FET having a uniform pinch-off voltage for all parts of the channel. Also the method may be used to yield junction FET structures in which the output characteristics can be predetermined according to the cross-sectional shape of the channel region portions determined by the bombardment induced radiation enhanced diffusion with controlled channelling.

    摘要翻译： 一种制造半导体器件的方法，其中在包括较高掺杂区域和较低掺杂区域之间的边界的半导体主体中，辐射增强的杂质扩散跨越从较高掺杂区域到下掺杂区域的边界，以形成 所述低掺杂区域是其横向范围基本上恒定的另一区域，所述辐射增强扩散是通过将高能粒子束从其下面的掺杂区域的一侧引向边界而产生的，并且产生 至少在边界附近的下掺杂区域中的晶体结构，半导体本体相对于入射光束的取向和选择的粒子的能量，以便通过颗粒产生半导体主体晶格的通道 在低掺杂区域中的沟道范围至少延伸到边界。 该方法可以用质子轰击进行，特别是形成具有精确控制尺寸的通道部分的一些新颖的结型场效应晶体管结构。 该方法可以用于制造通道的所有部分具有均匀夹断电压的掩埋沟道结FET。 此外，该方法可以用于产生结型FET结构，其中输出特性可以根据通过受控沟道引导的辐射增强扩散确定的通道区域部分的横截面形状来预先确定。

    Amplifier for amplifying an input signal derived from a signal source and provided with an amplitude-limiting two-terminal network connected to its output circuit
    3.
    发明授权
    Amplifier for amplifying an input signal derived from a signal source and provided with an amplitude-limiting two-terminal network connected to its output circuit 失效
    用于放大从信号源传送的输入信号的放大器，并提供限制两端连接到其输出电路的功率放大器

    公开(公告)号：US3737795A

    公开(公告)日：1973-06-05

    申请号：US3737795D

    申请日：1971-11-03

    申请人： PHILIPS NV

    发明人： VANDOORN W

    IPC分类号： H03G11/00 ,  H03G3/30

    CPC分类号： H03G11/002

    摘要： The invention relates to a limiter for limiting the output signal from an amplifier, for example, a video amplifier, which limiter is provided with an amplitude-limiting two-terminal network and an auxiliary amplifier, a first terminal of the twoterminal network being connected to the signal output lead of the amplifier and a second terminal being connected to an auxiliary signal output lead of the auxiliary amplifier, a signal being derived from said auxiliary amplifier which is in phase opposition with the output signal from the amplifier. The output terminals of the limiter are connected to said first terminal of the two-terminal network and to a terminal of fixed reference potential respectively.

    摘要翻译： 本发明涉及一种限制器，用于限制来自放大器（例如，视频放大器）的输出信号，该限幅器设置有限幅双端网络和辅助放大器，两端网络的第一端 连接到放大器的信号输出引线，并且第二端子连接到辅助放大器的辅助信号输出引线，该信号从与放大器的输出信号相位相反的所述辅助放大器导出。 限幅器的输出端分别连接到两端网络的所述第一端和固定参考电位的端子。

    Device for the transmission of synchronous pulse signals
    4.
    发明授权
    Device for the transmission of synchronous pulse signals 失效
    用于传输同步脉冲信号的设备

    公开(公告)号：US3737778A

    公开(公告)日：1973-06-05

    申请号：US3737778D

    申请日：1971-11-04

    申请人： PHILIPS NV

    发明人： VAN GERWEN P ,  HARMSEN W

    IPC分类号： H04L27/00 ,  H04B1/16

    CPC分类号： H04L27/0008

    摘要： A receiver for a synchronous pulse signal formed with the clock, carrier, and shift frequencies having mutual ratios of integers. The receiver has two channels controlled by a clock pulse generator synchronized to a received signal and followed by a pulse regenerator. The receiver is well suited for an embodiment using integrated circuits.

    摘要翻译： 用于同步脉冲信号的接收器，其形成有具有整数相互比率的时钟，载波和移位频率。 接收机具有由与接收信号同步的时钟脉冲发生器控制的两个通道，随后是脉冲再生器。 接收机非常适合于使用集成电路的实施例。