摘要:
During the radiographic inspection of components by X-rays for better detection of defects, preferably automated, an uneven surface topography (2) of the component (1) is covered with a smoothening layer (8) made of a material whose volume-specific radiation absorption corresponds to that of the component material, so that a decrease of radiation absorption or an increase in radiation intensity due to the uneven surface topography is reduced to accentuate a radiation effect caused by internal material defects.
摘要:
Non-invasive and non-destructive apparatus and method for imaging, recording, and comparing the mass density distributions and thicknesses of test specimens (19F, 19B). A source of medium-to-high-energy photons (3) directs a photon beam (4) at an electron source (17) comprised of high atomic number material, which emits in response thereto electrons (9F, 9B), some of which are not absorbed and not widely scattered by the test specimens (19F, 19B), but are transmitted therethrough and captured on one or more photographic films (15F, 15B) in contact with said specimens (19F, 19B). Net recorded film (15F, 15B) densities are in inverse relation to the mass density distribution of the corresponding test specimen (19F, 19B). A filter (5) is interposed between the photon source (3) and the capture film (15B) when back emission imaging (B) is employed. The filter (5) is optional when forward emission imaging (F) is used. The filter (5) absorbs photons (4) that have an energy sufficiently low to create an unwanted X-ray response on the capture film (15F, 15B) within the period required for the desired electron (9F, 9B) imaging.
摘要:
The device comprises a monochromatic X-radiation source from which a beam of incident X-rays is directed onto a single crystal, a system for detecting the intensity of the diffracted emergent beam by means of a stationary screen with a selecting slit, a movable screen having a variable-aperture analyzing slit and a moving photographic film, the X-ray source being ''''seen'''' from the single crystal at a substantial solid angle of the same order of magnitude as the disorientations to be recorded on the film. The single crystal is displaced by means of a goniometer mounted on a carriage which is driven in translational motion substantially at right angles to the direction of the incident Xray beam. Single-crystal samples several centimeters in thickness and of widely varying chemical composition can be analyzed by means of the device without any attendant danger of destruction.
摘要:
An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing x-ray diffraction techniques. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vaccum chuck provided for an x-ray camera while the entire surface thereof is illuminated simultaneously by a beam of incident x-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the wafer.