公开(公告)号：US07188413B2

公开(公告)日：2007-03-13

申请号：US10728306

申请日：2003-12-04

申请人： Owais Jamil

发明人： Owais Jamil

IPC分类号： H01K3/10

CPC分类号： H05K3/243 ,  H01L21/486 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05016 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K3/062 ,  H05K3/064 ,  H05K3/108 ,  H05K3/4038 ,  H05K2201/0305 ,  H05K2201/0352 ,  H05K2201/0394 ,  H05K2203/0554 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49135 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49158 ,  Y10T29/49165 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014

摘要： A microelectronic element is formed from a structure including metal layers on top and bottom sides of a dielectric. Apertures are formed in the top metal layer, and vias are formed in the dielectric in alignment with the apertures. Top and bottom conductive features are formed in proximity to the vias, as by selectively depositing a metal on the metal layers or selectively etching the metal layers. The top and bottom conductive features are connected to one another by depositing a conductive material into the vias, most preferably without seeding the vias as, for example, by depositing solder in the vias.

摘要翻译： 微电子元件由电介质的顶面和底面上的包括金属层的结构形成。 在顶部金属层中形成孔，并且在电介质中形成与孔对准的通孔。 顶部和底部导电特征形成在通孔附近，如通过选择性地在金属层上沉积金属或选择性地蚀刻金属层。 顶部和底部导电特征通过将导电材料沉积到通孔中而彼此连接，最优选地不通过例如通过在通孔中沉积焊料来接通通孔。

公开(公告)号：US06678952B2

公开(公告)日：2004-01-20

申请号：US09916554

申请日：2001-07-27

申请人： Owais Jamil

发明人： Owais Jamil

IPC分类号： H05K302

CPC分类号： H05K3/243 ,  H01L21/486 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05016 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/15311 ,  H05K3/062 ,  H05K3/064 ,  H05K3/108 ,  H05K3/4038 ,  H05K2201/0305 ,  H05K2201/0352 ,  H05K2201/0394 ,  H05K2203/0554 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49135 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49158 ,  Y10T29/49165 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2924/00014

摘要： A microelectronic element is formed from a structure including metal layers on top and bottom sides of a dielectric. Apertures are formed in the top metal layer, and vias are formed in the dielectric in alignment with the apertures. Top and bottom conductive features are formed in proximity to the vias, as by selectively depositing a metal on the metal layers or selectively etching the metal layers. The top and bottom conductive features are connected to one another by depositing a conductive material into the vias, most preferably without seeding the vias as, for example, by depositing solder in the vias.

摘要翻译： 微电子元件由电介质的顶面和底面上的包括金属层的结构形成。 在顶部金属层中形成孔，并且在电介质中形成与孔对准的通孔。 顶部和底部导电特征形成在通孔附近，如通过选择性地在金属层上沉积金属或选择性地蚀刻金属层。 顶部和底部导电特征通过将导电材料沉积到通孔中而彼此连接，最优选地不通过例如通过在通孔中沉积焊料来接通通孔。

公开(公告)号：US07067742B2

公开(公告)日：2006-06-27

申请号：US10033988

申请日：2001-12-28

申请人： Thomas H. DiStefano ,  Joseph Fjelstad ,  Belgacem Haba ,  Owais Jamil ,  Konstantine Karavakis ,  David Light ,  John W. Smith

发明人： Thomas H. DiStefano ,  Joseph Fjelstad ,  Belgacem Haba ,  Owais Jamil ,  Konstantine Karavakis ,  David Light ,  John W. Smith

IPC分类号： H01R12/04 ,  H05K1/11

CPC分类号： H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H05K3/4092 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49149 ,  H01L2924/00

摘要： A connection component for use in making microelectronic element assemblies which has peelable leads that are formed on a dielectric support structure. One end of each lead is permanently connected to the support structure and the opposite end of the lead is releasably connected to the support structure. When the releasable end of the lead is bonded to a contact on a semiconductor chip, the releasable end of the lead can be peeled from the support structure such that the chip may be moved away from the support structure. A compliant layer may be disposed between the chip and the support structure. If a compliant material is injected between the chip and the support structure to form the compliant layer, the compliant material will lift the chip away from the support structure and facilitate the peeling of the leads from the support structure.

公开(公告)号：US06357112B1

公开(公告)日：2002-03-19

申请号：US09200100

申请日：1998-11-25

申请人： Thomas H. DiStefano ,  Joseph Fjelstad ,  Belgacem Haba ,  Owais Jamil ,  Konstantine Karavakis ,  David Light ,  John W. Smith

发明人： Thomas H. DiStefano ,  Joseph Fjelstad ,  Belgacem Haba ,  Owais Jamil ,  Konstantine Karavakis ,  David Light ,  John W. Smith

IPC分类号： H01R906

CPC分类号： H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12042 ,  H05K3/4092 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49149 ,  H01L2924/00

摘要： A connection component for use in making microelectronic element assemblies, has peelable leads that are formed on a dielectric support structure. One end of each lead is permanently connected to the support structure and the opposite end of the lead is releasably connected to the support structure. When the releasable end of the lead is bonded to a contact on a semiconductor chip, the releasable end of the lead can be peeled from the support structure such that the chip may be moved away from the support structure. A compliant layer may be disposed between the chip and the support structure. If a compliant material is injected between the chip and the support structure to form the compliant layer, the compliant material will lift the chip away from the support structure and facilitate the peeling of the leads from the support structure.

摘要翻译： 用于制造微电子元件组件的连接部件具有形成在电介质支撑结构上的可剥离引线。 每个引线的一端永久地连接到支撑结构，并且引线的相对端可释放地连接到支撑结构。 当引线的可释放端接合到半导体芯片上的触点时，引线的可释放端可以从支撑结构剥离，使得芯片可以从支撑结构移开。 柔性层可以设置在芯片和支撑结构之间。 如果柔性材料在芯片和支撑结构之间注入以形成顺应性层，柔性材料将使芯片从支撑结构上提升，并促进引线从支撑结构的剥离。