公开(公告)号：US07303945B2

公开(公告)日：2007-12-04

申请号：US10999125

申请日：2004-11-30

申请人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

发明人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/66757 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/78633 ,  H01L29/78636

摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

摘要翻译： 一种形成层叠膜的图案的方法，包括步骤（a）至（e）。 步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。 步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。 步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。 步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。 步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。 叠层膜包括半导体膜和第一氧化物膜。 干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。 半导体膜包括被控制在预定范围内的锥角。

公开(公告)号：US5994833A

公开(公告)日：1999-11-30

申请号：US990430

申请日：1997-12-15

申请人： Nobuya Seko ,  Hironori Imura

发明人： Nobuya Seko ,  Hironori Imura

IPC分类号： H01J1/304 ,  H01J29/94 ,  H01J1/30 ,  H05B37/00

CPC分类号： H01J29/94 ,  H01J1/3042

摘要： In this field emission cold cathode apparatus, the heater shares at least one terminal with the other components, namely, the emitter electrode, the gate electrode, the focus electrode. With this structure, gases absorbed into a surface of the emitters can be released out from the emitters, by heating emitters with the heater. In addition, this apparatus can avoid the increase in the number of the terminal compared with the conventional apparatus having a heater.

摘要翻译： 在该场发射冷阴极装置中，加热器与其它部件即发射电极，栅电极，聚焦电极共用至少一个端子。 通过这种结构，通过用加热器加热发射器，吸收到发射器的表面中的气体可以从发射器释放出来。 此外，与具有加热器的常规装置相比，该装置可以避免终端数量的增加。

公开(公告)号：US07781837B2

公开(公告)日：2010-08-24

申请号：US11976265

申请日：2007-10-23

申请人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

发明人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L29/66757 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/78633 ,  H01L29/78636

摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

摘要翻译： 一种形成层叠膜的图案的方法，包括步骤（a）至（e）。 步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。 步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。 步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。 步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。 步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。 叠层膜包括半导体膜和第一氧化物膜。 干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。 半导体膜包括被控制在预定范围内的锥角。

公开(公告)号：US20050156239A1

公开(公告)日：2005-07-21

申请号：US10999125

申请日：2004-11-30

申请人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

发明人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/00 ,  H01L21/461 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L29/66757 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/78633 ,  H01L29/78636

摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

摘要翻译： 一种形成层叠膜的图案的方法，包括步骤（a）至（e）。 步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。 步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。 步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。 步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。 步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。 叠层膜包括半导体膜和第一氧化物膜。 干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。 半导体膜包括被控制在预定范围内的锥角。

公开(公告)号：US06377231B2

公开(公告)日：2002-04-23

申请号：US08966560

申请日：1997-11-10

申请人： Nobuya Seko ,  Yoshinori Tomihari

发明人： Nobuya Seko ,  Yoshinori Tomihari

IPC分类号： G09G108

CPC分类号： H04N3/20 ,  G09G1/002 ,  G09G1/005 ,  G09G2330/04

摘要： An image display device incorporating a quick-action electron source is disclosed. After the power source of the device is turned on, drive signals are outputted from an RGB output circuit to each of the RGB electron sources after it is detected that sufficient deflection current is flowing from horizontal/vertical deflection circuit to the deflection yoke to enable the electron beam to adequately scan the screen.

摘要翻译： 公开了一种结合有快速电子源的图像显示装置。 在装置的电源被接通之后，在检测到足够的偏转电流从水平/垂直偏转电路流向偏转线圈之后，驱动信号从RGB输出电路输出到每个RGB电子源，使得能够 电子束来充分扫描屏幕。

公开(公告)号：US5787337A

公开(公告)日：1998-07-28

申请号：US593371

申请日：1996-01-29

申请人： Fumihiko Matsuno ,  Nobuya Seko

发明人： Fumihiko Matsuno ,  Nobuya Seko

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： In a field-emission cold cathode forming an emitter by the vacuum deposition method, contamination at the side surface of the insulating layer due to deposition of an emitter material during formation of the emitter is prevented. Thereby, deterioration of insulating resistance and dielectric strength between gate and emitter can also be prevented. With an oblique vacuum deposition, a sacrificing layer 5 is formed onto the entire area of the side surface within the cavity 4, an emitter is then vacuum deposited, and thereafter emitter material particles are removed together with the protecting film.

摘要翻译： 在通过真空沉积法形成发射极的场致发射冷阴极中，防止了在发射体形成期间由于发射体材料的沉积而导致的绝缘层侧表面的污染。 因此，也可以防止栅极和发射极之间的绝缘电阻和介电强度的劣化。 通过倾斜真空沉积，在空腔4内的侧表面的整个区域上形成牺牲层5，然后真空沉积发射体，然后将发射体材料颗粒与保护膜一起去除。

公开(公告)号：US20080048264A1

公开(公告)日：2008-02-28

申请号：US11976265

申请日：2007-10-23

申请人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

发明人： Nobuya Seko ,  Hitoshi Shiraishi ,  Kenichi Hayashi ,  Naoto Hirano ,  Atsushi Yamamoto

IPC分类号： H01L27/01

CPC分类号： H01L29/66757 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/78633 ,  H01L29/78636

摘要： A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

摘要翻译： 一种形成层叠膜的图案的方法，包括步骤（a）至（e）。 步骤（a）在透明基板上依次形成第一基底绝缘膜和遮光材料。 步骤（b）是图案化遮光材料以获得具有第一图案的遮光膜。 步骤（c）在衬底上依次形成第二基底绝缘膜，半导体膜和第一氧化物膜。 步骤（d）是在第一氧化膜上形成具有第二图案的抗蚀剂图案。 步骤（e）通过在遮光膜上方干蚀刻第一氧化膜和半导体膜来形成堆叠膜的图案。 叠层膜包括半导体膜和第一氧化物膜。 干蚀刻包括通过使用蚀刻气体和抗蚀剂图案作为掩模的蚀刻。 半导体膜包括被控制在预定范围内的锥角。

公开(公告)号：US06294868B1

公开(公告)日：2001-09-25

申请号：US09266775

申请日：1999-03-12

申请人： Hironori Imura ,  Nobuya Seko

发明人： Hironori Imura ,  Nobuya Seko

IPC分类号： H01J2946

CPC分类号： H01J3/021 ,  H01J23/06

摘要： A Wehnelt electrode and a cold cathode are pressed against and fixed to each other under spring force with a ceramic plate interposed therebetween. Metallized layers connected to a gate electrode and a focusing electrode are disposed on surfaces of the ceramic plate. The gate electrode and the focusing electrode are connected to external power supplies via the metallized layers as feeder path structures. With this arrangement, an electron gun for an electron tube with a cold cathode can be designed with increased degree of freedom, reduced in size, can easily be assembled at the time of manufacture, has high dimensional accuracy, provides high dielectric strength between gate and Wehnelt electrodes, and is highly resistant to vibrations.

摘要翻译： 一个Wehnelt电极和一个冷阴极在弹簧力的作用下被压靠并固定在陶瓷板之间。 连接到栅电极和聚焦电极的金属化层设置在陶瓷板的表面上。 栅极电极和聚焦电极通过金属化层连接到外部电源作为馈电路径结构。 通过这种布置，可以设计具有冷阴极的电子管的电子枪，其自由度增加，尺寸减小，在制造时可以容易地组装，具有高尺寸精度，提供栅极与栅极之间的高介电强度 Wehnelt电极，并且抗振动性高。

公开(公告)号：US6075315A

公开(公告)日：2000-06-13

申请号：US618378

申请日：1996-03-19

申请人： Nobuya Seko ,  Hironori Imura ,  Masayuki Yoshiki ,  Kunihiro Shiota

发明人： Nobuya Seko ,  Hironori Imura ,  Masayuki Yoshiki ,  Kunihiro Shiota

IPC分类号： H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J1/02 ,  H01J1/16 ,  H01J19/10 ,  H01J63/04

CPC分类号： H01J3/022 ,  H01J9/025

摘要： Piled-up films composed of different materials or composed of the same material manufactured by different methods or different conditions are used as an insulating layer for a field-emission cold cathode. The insulating layer may have a composition which is varied continuously in the thickness direction. A cross-section of the insulating layer may be made uneven. Preferably, a triple junction in which a substrate, the insulating layer, and a vacuum are in contact with one another, is disposed at a position which can not be seen from outside the device.

摘要翻译： 作为场致发射冷阴极的绝缘层，使用由不同材料构成或由不同方法或不同条件制造的相同材料构成的堆积薄膜。 绝缘层可以具有在厚度方向上连续变化的组成。 可以使绝缘层的横截面不均匀。 优选地，其中衬底，绝缘层和真空彼此接触的三重结构被布置在从器件外部看不到的位置。

公开(公告)号：US07633571B2

公开(公告)日：2009-12-15

申请号：US11029405

申请日：2005-01-06

申请人： Takahiro Korenari ,  Hiroshi Tanabe ,  Nobuya Seko

发明人： Takahiro Korenari ,  Hiroshi Tanabe ,  Nobuya Seko

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  H01L27/12 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78645

摘要： Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.

摘要翻译： 认识到半导体层的膜厚导致与薄膜晶体管的背栅极电压相对应的OFF漏电流特性偏移的现象，规定半导体层的平均膜厚，使得 泄漏电流特性降低。 或者，规定半导体层的沟道宽度方向的膜厚分布（膜厚不同的区域的出现比例）。