公开(公告)号：US09334163B2

公开(公告)日：2016-05-10

申请号：US14357161

申请日：2012-10-25

申请人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

发明人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

IPC分类号： C01B3/08 ,  C01B3/00 ,  C22C23/00 ,  H01M4/24 ,  H01M4/38 ,  H01M4/46

CPC分类号： C01B3/0084 ,  C01B3/0042 ,  C22C23/00 ,  H01M4/242 ,  H01M4/383 ,  H01M4/46 ,  Y02E60/124 ,  Y02E60/327 ,  Y02E60/36

摘要： A hydrogen storage method is provided which enables a hydrogen storage alloy to store hydrogen up to a maximum hydrogen storage amount thereof in excess of a generally known theoretical value. In a hydrogenation step, a hydrogen storage ratio calculated as an atomic weight ratio between hydrogen and the hydrogen storage alloy is obtained beforehand as a theoretical value, a pressure at which the hydrogen storage alloy stores hydrogen up to the theoretical value is set as a first pressure value, a pressure value ten or more times greater than the first pressure value is set as a second pressure value, and pressure is increased up to the second pressure value. In a dehydrogenation step, the pressure is decreased from the second pressure value to or below the first pressure value. The hydrogenation step and the dehydrogenation step are repeatedly executed.

摘要翻译： 提供一种氢存储方法，其使得储氢合金能够将氢存储至超过一般已知理论值的最大储氢量。 在氢化工序中，作为理论值预先获得以氢原子与储氢合金的原子重量比计算的储氢率，将储氢合金将氢储存至理论值的压力设定为第一 压力值，比第一压力值大十倍以上的压力值被设定为第二压力值，并且将压力增加到第二压力值。 在脱氢步骤中，压力从第二压力值降低到或低于第一压力值。 重复执行氢化步骤和脱氢步骤。

公开(公告)号：US08969761B2

公开(公告)日：2015-03-03

申请号：US12912427

申请日：2010-10-26

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00 ,  C03C23/00 ,  B23K26/03 ,  B23K26/04 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08 ,  B23K26/36 ,  B23K26/40 ,  B28D5/00 ,  C03B33/023 ,  C03B33/08 ,  C03B33/10 ,  G02F1/1368

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US08758691B2

公开(公告)日：2014-06-24

申请号：US13641373

申请日：2011-02-21

申请人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

发明人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

IPC分类号： G01N33/22 ,  G01N21/00 ,  G01N21/29 ,  G01N21/59

CPC分类号： G01N21/29 ,  C01B3/0031 ,  C01B3/0042 ,  C01B3/0078 ,  C22C1/00 ,  C22C16/00 ,  C22C23/00 ,  G01N21/00 ,  G01N21/59 ,  G01N21/783 ,  G01N33/005 ,  G01N2021/7783 ,  Y02E60/327 ,  Y10T436/21 ,  Y10T436/22

摘要： A hydrogen sensor using a hydrogen-absorbing alloy containing an Mg—Ni-based alloy and a Zr—Ti-based alloy includes a substrate (2), a hydrogen reaction layer (3) formed on the substrate (2) and containing the Mg—Ni-based alloy and the Zr—Ti-based alloy, and a first catalyst layer (4) formed on the hydrogen reaction layer (3) and capable of accelerating hydrogenation of the Mg—Ni-based alloy.

摘要翻译： 使用含有Mg-Ni系合金和Zr-Ti系合金的吸氢合金的氢传感器包括：基板（2），形成在基板（2）上的氢反应层（3），并含有Mg Ni基合金和Zr-Ti系合金，以及形成在氢反应层（3）上并能够促进Mg-Ni系合金的氢化的第一催化剂层（4）。

公开(公告)号：US08551817B2

公开(公告)日：2013-10-08

申请号：US13269274

申请日：2011-10-07

申请人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

发明人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama ,  Ryuji Sugiura ,  Kazuhiro Atsumi

IPC分类号： H01L21/00

CPC分类号： B23K26/0884 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line.

摘要翻译： 用激光照射具有由功能元件形成的正面的晶片，同时将晶片的后表面作为激光入射面定位晶片内的聚光点，从而产生多光子吸收，从而形成 一个起始点区域，用于沿着一条线在晶片内熔融的处理区域进行切割。 因此，可以从用于自然切割的起点区域或以相对小的力产生断裂，从而到达前表面和后表面。 因此，在形成切割起点区域之后，通过芯片接合树脂层将膨胀膜附着到晶片的背面，然后扩大时，可以沿着线切割晶片和芯片接合树脂层。

公开(公告)号：US08541251B2

公开(公告)日：2013-09-24

申请号：US13548632

申请日：2012-07-13

申请人： Naoki Uchiyama

发明人： Naoki Uchiyama

IPC分类号： H01L21/00

CPC分类号： B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： A light-emitting device manufacturing method comprises the steps of irradiating a substrate 2 having a III-V compound semiconductor layer 17 formed on a front face 2a with laser light L1 along lines to cut 5a, 5b, while locating a converging point P1 within the sapphire substrate 2 and using a rear face 2b thereof as a laser light entrance surface, and thereby forming modified regions 7a, 7b along the lines 5a, 5b within the substrate 2; then forming a light-reflecting layer on the rear face 2b of the substrate 2; and thereafter extending fractures generated from the modified regions 7a, 7b acting as a start point in the thickness direction of the substrate 2, and thereby cutting the substrate 2, the semiconductor layer 17 and the light-reflecting layer along the lines 5a, 5b, and manufacturing a light-emitting device.

摘要翻译： 发光器件制造方法包括以下步骤：将沿着切割线5a，5b的激光L1照射形成在前面2a上的III-V族化合物半导体层17的基板2，同时将会聚点P1定位在 蓝宝石基板2并使用其背面2b作为激光入射面，从而沿基板2内的线5a，5b形成改质区域7a，7b; 然后在基板2的背面2b上形成光反射层; 然后延伸从作为基板2的厚度方向的起始点的改质区域7a，7b产生的断裂，从而沿着线5a，5b切断基板2，半导体层17和光反射层， 并制造发光装置。

公开(公告)号：US08523636B2

公开(公告)日：2013-09-03

申请号：US12744714

申请日：2008-11-18

申请人： Naoki Uchiyama

发明人： Naoki Uchiyama

IPC分类号： B24B1/00

CPC分类号： H01L21/304 ,  B23K26/0823 ,  B23K26/0869 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B24B1/00 ,  B24B7/228

摘要： A working object grinding method capable of grinding a working object reliably is provided. A working object 1 is irradiated with a laser beam while locating a converging point therewithin, so as to form a reformed region 7 in the working object 1 along a reformed-region forming line set at a predetermined distance inside from an outer edge of the working object 1 along the outer edge, and a rear face 21 of the working object 1 is ground. As a result, the reformed region 7 or fissures C1 extending therefrom can inhibit fissures generated in an outer edge portion 25 upon grinding the working object 1 from advancing to the inside, whereby the working object 1 can be prevented from fracturing.

摘要翻译： 提供能够可靠地研磨加工对象物的工件对象研磨方法。 工件1用激光束照射，同时在其间定位会聚点，以便沿加工区域形成线形成重新形成区域7，该重整区域沿着设置在工作对象1的外边缘内部预定距离内的重整区域形成线 物体1沿着外边缘，并且加工对象物1的背面21被研磨。 结果，由此可以使被加工区域7或从其延伸的裂缝C1能够抑制加工对象物1向内侧磨削而在外缘部25产生裂纹，能够防止加工对象物1的破裂。

公开(公告)号：US08409968B2

公开(公告)日：2013-04-02

申请号：US13206181

申请日：2011-08-09

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20130017670A1

公开(公告)日：2013-01-17

申请号：US13596781

申请日：2012-08-28

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00 ,  B23K26/06 ,  H01L21/268 ,  B23K26/08

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut.

摘要翻译： 一种激光加工方法，其特征在于，包括如下步骤：用椭圆偏振以外的激光进行椭圆偏振以外的激光照射1以使激光的聚光点沿着椭圆的长轴位于物体内 沿着物体意图被切割的线，激光的椭圆偏振，沿物体意图切割的线形成由物体内的多光子吸收引起的改质区域。

公开(公告)号：US20130012000A1

公开(公告)日：2013-01-10

申请号：US13618393

申请日：2012-09-14

申请人： Yoshimaro FUJII ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

发明人： Yoshimaro FUJII ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US20120329248A1

公开(公告)日：2012-12-27

申请号：US13608676

申请日：2012-09-10

申请人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu FUKUYO ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/78

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。