公开(公告)号：US20080311713A1

公开(公告)日：2008-12-18

申请号：US12185740

申请日：2008-08-04

Applicant: Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

Inventor： Shin-Chii Lu ,  Yu-Ming Lin ,  Min-Hung Lee ,  Zing-Way Pei ,  Wen-Yi Hsieh

IPC: H01L21/8238

CPC classification number: H01L29/1054 ,  H01L21/265 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a complementary metal-oxide-semiconductor (CMOS) device and a fabrication method thereof. The CMOSFET device includes a compressively strained SiGe channel for a PMOSFET, as well as a tensile strained Si channel for an NMOSFET, thereby enhancing hole and electron mobility for the PMOSFET and the NMOSFET, respectively. As such, the threshold voltages of the two types of transistors can be obtained in oppositely symmetric by single metal gate.

Abstract translation: 本发明提供一种互补金属氧化物半导体（CMOS）器件及其制造方法。 CMOSFET器件包括用于PMOSFET的压缩应变SiGe沟道，以及用于NMOSFET的拉伸应变Si沟道，从而分别增强PMOSFET和NMOSFET的空穴和电子迁移率。 因此，可以通过单金属栅极相反对称地获得两种类型的晶体管的阈值电压。

公开(公告)号：US20080023733A1

公开(公告)日：2008-01-31

申请号：US11860362

申请日：2007-09-24

Applicant: Min-Hung LEE ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

Inventor： Min-Hung LEE ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

IPC: H01L29/78

CPC classification number: H01L21/26506 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842 ,  Y10S438/938

Abstract: Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.

Abstract translation: 通过离子注入制备压应变硅的制备方法。 将离子注入到含硅衬底中，并且高温处理将离子包含区域的附近转变为应变硅。 还提供了通过该方法制造的晶体管。

公开(公告)号：US20060284164A1

公开(公告)日：2006-12-21

申请号：US11216179

申请日：2005-09-01

Applicant: Min-Hung Lee ,  Cheng-Yeh Yu ,  Chee-Wee Liu

Inventor： Min-Hung Lee ,  Cheng-Yeh Yu ,  Chee-Wee Liu

IPC: H01L31/00

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: A strained germanium field effect transistor (FET) and method of making the same, comprise forming a germanium layer on a substrate, then forming a Si protective layer on the germanium layer, next forming a gate insulation layer on the Si protective layer, and fmally positioning a gate on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained germanium FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. And because the Si protective layer is on the germanium layer, the interface property between the germanium layer and the gate insulation layer is improved.

Abstract translation: 应变锗场效应晶体管（FET）及其制造方法包括在衬底上形成锗层，然后在锗层上形成Si保护层，接着在Si保护层上形成栅极绝缘层，并且最终形成 在栅极绝缘层上定位栅极。 锗层用作应变锗FET的载流子传输通道，以提高驱动电流和载流子迁移率，并有效提高器件性能。 并且由于Si保护层在锗层上，所以锗层和栅极绝缘层之间的界面性能得到改善。

公开(公告)号：US07868314B2

公开(公告)日：2011-01-11

申请号：US12547744

申请日：2009-08-26

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L47/00

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20100140583A1

公开(公告)日：2010-06-10

申请号：US12547744

申请日：2009-08-26

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US07598113B2

公开(公告)日：2009-10-06

申请号：US11479497

申请日：2006-06-30

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

公开(公告)号：US20070045610A1

公开(公告)日：2007-03-01

申请号：US11293275

申请日：2005-12-05

Applicant: Min-Hung Lee ,  Cheng-Yeh Yu ,  Chee-Wee Liu

Inventor： Min-Hung Lee ,  Cheng-Yeh Yu ,  Chee-Wee Liu

IPC: H01L31/109

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66583 ,  H01L29/78

Abstract: A transistor device with strained Ge layer by selectively growth and a fabricating method thereof are provided. A strained Ge layer is selectively grown on a substrate, so that the material of source/drain region is still the same as that of the substrate, and the strained Ge layer serves as a carry transport channel. Therefore, the performance of the device characteristics can be improved and the leakage current of the transistor may be approximately commensurate with that of a Si substrate field effect transistor (FET).

Abstract translation: 提供了通过选择性生长具有应变Ge层的晶体管器件及其制造方法。 应变Ge层选择性地生长在衬底上，使得源极/漏极区的材料与衬底的材料仍然相同，并且应变Ge层用作携带传输沟道。 因此，可以提高器件特性的性能，并且晶体管的漏电流可以与Si衬底场效应晶体管（FET）的漏电流近似相当。

公开(公告)号：US20090302349A1

公开(公告)日：2009-12-10

申请号：US12540216

申请日：2009-08-12

Applicant: Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

Inventor： Min Hung Lee ,  Cheng Yeh Yu ,  Chee Wee Liu

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L29/1054 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664

Abstract: A strained germanium field effect transistor (FET) and method of fabricating the same is related to the strained Ge field effect transistor with a thin and pure Ge layer as a carrier channel. The pure Ge layer with the thickness between 1 nm and 10 nm is formed between an unstrained substrate and a gate insulation layer, and directly contacts with the unstrained substrate. The gate is disposed on the gate insulation layer. The germanium layer is used as a carrier transport channel of the strained Ge FET to improve the drive current and the carrier mobility, and to increase the devices performance effectively. Furthermore, a Si protective layer with extremely thin thickness can be deposed between and directly contacts with the gate insulation layer and the pure Ge layer.

Abstract translation: 应变锗场效应晶体管（FET）及其制造方法涉及具有薄而纯的Ge层作为载流子通道的应变Ge场效应晶体管。 在无应变衬底和栅极绝缘层之间形成厚度在1nm和10nm之间的纯Ge层，并且与无约束衬底直接接触。 栅极设置在栅极绝缘层上。 锗层用作应变Ge FET的载流子传输通道，以改善驱动电流和载流子迁移率，并有效提高器件性能。 此外，具有极薄厚度的Si保护层可以被放置在栅绝缘层和纯Ge层之间并直接接触。

公开(公告)号：US07282414B2

公开(公告)日：2007-10-16

申请号：US10909403

申请日：2004-08-03

Applicant: Min-Hung Lee ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

Inventor： Min-Hung Lee ,  Cheng-Yeh Yu ,  Shing-Chii Lu ,  Chee-Wee Liu

IPC: H01L21/336

CPC classification number: H01L21/26506 ,  H01L21/823807 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842 ,  Y10S438/938

Abstract: Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.

Abstract translation: 通过离子注入制备压应变硅的制备方法。 将离子注入到含硅衬底中，并且高温处理将离子包含区域的附近转变成应变硅。 还提供了通过该方法制造的晶体管。

公开(公告)号：US20070148855A1

公开(公告)日：2007-06-28

申请号：US11479497

申请日：2006-06-30

Applicant: Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

Inventor： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

IPC: H01L21/8244 ,  H01L21/8238 ,  H01L21/00 ,  H01L21/20

CPC classification number: H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract translation: 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。