Invention Application
US20080023733A1 FABRICATION METHODS FOR COMPRESSIVE STRAINED-SILICON AND TRANSISTORS USING THE SAME
审中-公开
使用它的压敏应变硅和晶体管的制造方法
- Patent Title: FABRICATION METHODS FOR COMPRESSIVE STRAINED-SILICON AND TRANSISTORS USING THE SAME
- Patent Title (中): 使用它的压敏应变硅和晶体管的制造方法
-
Application No.: US11860362Application Date: 2007-09-24
-
Publication No.: US20080023733A1Publication Date: 2008-01-31
- Inventor: Min-Hung LEE , Cheng-Yeh Yu , Shing-Chii Lu , Chee-Wee Liu
- Applicant: Min-Hung LEE , Cheng-Yeh Yu , Shing-Chii Lu , Chee-Wee Liu
- Priority: TW093113926 20040518
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
Fabrication methods for compressive strained-silicon by ion implantation. Ions are implanted into a silicon-containing substrate and high temperature processing converts the vicinity of the ion-contained region into strained-silicon. Transistors fabricated by the method are also provided.
Information query
IPC分类:
