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    Increased anisotropy induced by direct ion etch for telecommunications/electronics devices
    1.
    发明授权
    Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权
    通过电子/电子设备的直接离子蚀刻引起的各向异性增加

    公开(公告)号：US08004374B2

    公开(公告)日：2011-08-23

    申请号：US11845239

    申请日：2007-08-27

    Applicant: Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    Inventor： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC: H03H7/01 ,  H01P1/20

    CPC classification number: G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49075

    Abstract: A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.

    Abstract translation: 一种微波带阻滤波器，其具有在电介质材料上形成的磁条。 磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。 磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。 或者，各向异性表面纹理可以形成在下层和磁条本身上。 该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。

    EMR magnetic head having a magnetic flux guide and a body formed at a tail end of a slider
    2.
    发明授权
    EMR magnetic head having a magnetic flux guide and a body formed at a tail end of a slider 失效
    EMR磁头具有磁通引导件和形成在滑块的尾端的主体

    公开(公告)号：US07738217B2

    公开(公告)日：2010-06-15

    申请号：US11352526

    申请日：2006-02-13

    Applicant: Matthew Joseph Carey

    Inventor： Matthew Joseph Carey

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: G11B5/3993 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/095 ,  G11B5/39 ,  G11B2005/0002

    Abstract: A magnetic head of the present application has a sensor which employs the extraordinary magnetoresistance (EMR) effect. The magnetic head includes a body of semiconductor material positioned over a tail end of a carrying mechanism; a field receiving surface of the body oriented perpendicular to a sensing plane of the magnetic head; an electrically conducting shunt coupled to a first end of the body; a plurality of electrically conducting contacts coupled to a second end of the body opposite the first end; and a magnetic flux guide having a first end at least partially formed over the field receiving surface and a second end exposed at the sensing plane. Advantageously, the magnetic flux guide orients a signal field of recorded data from a magnetic medium in a suitable direction for the field receiving surface, at least partially shields the field receiving surface magnetically, and allows for positioning of the magnetic head on the tail end of the carrying mechanism. Preferably, the slider over which the body is formed is made from a material of similar crystal structure, but higher electrical resistance, as the material of the body. In this way, the body may be grown epitaxially from the slider and be integrally formed therewith.

    Abstract translation: 本申请的磁头具有采用非凡的磁阻（EMR）效应的传感器。 磁头包括位于承载机构的尾端上方的半导体材料体; 所述体的场接收表面垂直于所述磁头的感测平面定向; 耦合到所述主体的第一端的导电分路; 多个导电触头，其联接到所述主体的与所述第一端相对的第二端; 以及磁通引导件，其具有至少部分地形成在所述磁场接收表面上的第一端和暴露在所述感测平面处的第二端。 有利地，磁通量引导器将来自磁性介质的记录数据的信号场定向到用于场接收表面的合适方向，至少部分地磁场地屏蔽场接收表面，并且允许将磁头定位在磁头的尾端 携带机制。 优选地，主体形成的滑块由与本体的材料相同的晶体结构的材料制成，但由较高的电阻制成。 以这种方式，主体可以从滑块外延生长并与其一体形成。

    High resistivity films for AP layers in spin valves
    4.
    发明授权
    High resistivity films for AP layers in spin valves 失效
    自旋阀中AP层的高电阻率膜

    公开(公告)号：US06548186B1

    公开(公告)日：2003-04-15

    申请号：US09574301

    申请日：2000-05-19

    Applicant: Matthew Joseph Carey ,  Bruce Alvin Gurney ,  Robert John Wilson

    Inventor： Matthew Joseph Carey ,  Bruce Alvin Gurney ,  Robert John Wilson

    IPC: G11B539

    CPC classification number: B82Y25/00 ,  B32B15/01 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12861 ,  Y10T428/12937 ,  Y10T428/12986

    Abstract: In a spin valve, at least one AP pinned sublayer and/or one AP free sublayer comprise high resistivity alloys of the type AB, wherein A is selected from the group consisting of CoFe, NiFe, and CoFeNi, and B is selected from the group consisting of B, Ta, Nb, Zr, and/or Hf. The resistivity value of the highly resistive layer is typically between about 30 &mgr;&OHgr;-cm and 100 &mgr;&OHgr;-cm. The highly resistive layers reduce the shunting of the sense current away from the rest of the structure, and prevent electrons from being shunted away from the active region of the spin valve and, thus, reducing &Dgr;R/R. The spin valve of this layered structure can increase the overall sheet resistance and optimize the &Dgr;R/R value of the spin valve.

    Abstract translation: 在自旋阀中，至少一个AP钉扎子层和/或一个AP自由子层包括AB型的高电阻率合金，其中A选自CoFe，NiFe和CoFeNi，B选自 由B，Ta，Nb，Zr和/或Hf组成。 高电阻层的电阻率值通常在约30μOMEGA-cm和100μOMEGA-cm之间。 高电阻层减少了感测电流与结构的其余部分的分流，并且防止电子被分流离开自旋阀的有源区域，从而减少DELTAR / R。 这种分层结构的自旋阀可以增加整体薄层电阻并优化自旋阀的DELTAR / R值。

    Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity
    5.
    发明授权
    Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity 失效
    磁阻和自旋阀传感器间隙具有减小的厚度和高导热性

    公开(公告)号：US06452761B1

    公开(公告)日：2002-09-17

    申请号：US09483087

    申请日：2000-01-14

    Applicant: Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Stuart Stephen Papworth-Parkin ,  Ren Xu

    Inventor： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney ,  Stuart Stephen Papworth-Parkin ,  Ren Xu

    IPC: G11B533

    CPC classification number: B82Y10/00 ,  G11B5/3103 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/40 ,  Y10T29/49043

    Abstract: The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents. Further, oxidized metal layers provide suitable surfaces to growing oxidized metal gap insulator layers of any thickness.

    Abstract translation: 本发明提供了具有减小的间隙厚度和改善的导热性的磁传感器装置。 本发明的间隙结构集成在磁数据存储系统中使用的层压磁阻和旋转阀传感器中。 通过沉积金属层和氧化金属层的全部或全部以形成薄的高质量的氧化金属介电隔离层来产生间隙结构。 氧化的金属层提供传感器元件的优异的电绝缘性，并且金属层的任何剩余的金属部分提供导热通路，以帮助消散由传感器元件产生的热量。 由于电绝缘和导热性的综合特性，本发明的磁传感器装置可以用较薄的间隙结构制成，并在较高的驱动电流下工作。 此外，氧化的金属层为任何厚度的生长的氧化金属间隙绝缘体层提供合适的表面。

    Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing
    6.
    发明授权
    Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing 有权
    具有用于纵向偏置的反铁磁交换耦合层的磁性传感器

    公开(公告)号：US06266218B1

    公开(公告)日：2001-07-24

    申请号：US09428734

    申请日：1999-10-28

    Applicant: Matthew Joseph Carey ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney

    Inventor： Matthew Joseph Carey ,  Robert Edward Fontana, Jr. ,  Bruce Alvin Gurney

    IPC: G11B539

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

    Abstract: A longitudinal bias structure to be placed adjacent a ferromagnetic free layer or a sense layer which is responsive to an external magnetic field and belongs to a magnetic sensor, for example a magnetic readback sensor such as an anisotropic magnetoresistive (AMR) sensor, giant magnetoresistive (GMR) sensor such as GMR spin valve sensor or GMR multilayer sensor or in tunnel valve sensor. The longitudinal bias structure is built up of a top ferromagnetic bias layer of first thickness t1 having a first magnetic moment M1, a bottom ferromagnetic bias layer of second thickness t2 having a second magnetic moment M2 which is anti-parallel to first magnetic moment M1 of the top ferromagnetic bias layer, and an exchange-coupling layer disposed between the top and bottom bias layers. In this configuration the top ferromagnetic bias layer and the bottom ferromagnetic bias layer are antiferromagnetically coupled by the exchange-coupling layer and the remnant magnetization thickness product of the bias structure is desirably low and equal to M1t1−M2t2. The longitudinal bias structure can further include an antiferromagnetic layer next to one of the ferromagnetic bias layers to provide a pinned longitudinal bias structure.

    Abstract translation: 邻近铁磁自由层或响应于外部磁场并属于磁传感器的感测层的纵向偏置结构，例如磁性回读传感器，例如各向异性磁阻（AMR）传感器，巨磁阻（ GMR）传感器，如GMR自旋阀传感器或GMR多层传感器或隧道阀传感器。 纵向偏置结构由具有第一磁矩M1的第一厚度t1的顶部铁磁偏置层构成，第二厚度t2的底部铁磁偏置层具有第二磁矩M2，第二磁矩M2与第一磁矩M1的第一磁矩M1反平行 顶部铁磁偏置层以及设置在顶部和底部偏置层之间的交换耦合层。 在该配置中，顶部铁磁偏置层和底部铁磁偏置层通过交换耦合层进行反铁磁耦合，并且偏置结构的剩余磁化厚度乘积期望低且等于M1t1-M2t2。 纵向偏置结构还可以包括与铁磁偏置层之一相邻的反铁磁层，以提供钉扎的纵向偏置结构。

    Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction
    7.
    发明授权
    Magnetoresistive sensor having a magnetically stable free layer with a positive magnetostriction 有权
    具有具有正磁致伸缩性的磁稳定自由层的磁阻传感器

    公开(公告)号：US07791844B2

    公开(公告)日：2010-09-07

    申请号：US11737701

    申请日：2007-04-19

    Applicant: Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat ,  James L. Nix

    Inventor： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat ,  James L. Nix

    IPC: G11B5/39

    CPC classification number: G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12

    Abstract: A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck. This angled, static ion milling produces an anisotropic surface texture, or roughness, of the free layer, which results in the above described magnetic anisotropy with an easy axis of magnetization in a desired orientation.

    Abstract translation: 具有由具有正磁致伸缩性的材料制成的磁稳定自由层的磁阻传感器，例如Co-Fe-B合金。 尽管自由层由具有正磁致伸缩的材料制成，这通常会使自由层不稳定，但是由于具有易磁化轴平行于空气的诱导磁各向异性，自由层的磁化保持稳定 （ABS）。 自由层的磁各向异性由自由层表面的各向异性纹理引发。 产生的各向异性表面纹理是通过离子研磨工艺产生的，该离子铣削工艺利用相对于晶片表面法线的锐角定向的离子束，其中制造传感器，同时将晶片保持在静止卡盘上。 这种成角度的静态离子铣削产生自由层的各向异性表面纹理或粗糙度，这导致上述磁各向异性，并且在所需方向上具有容易的磁化轴。

    Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers
    10.
    发明授权
    Magnetic random access memory (MRAM) having increased reference layer anisotropy through ion beam etch of magnetic layers 有权
    磁性随机存取存储器（MRAM）通过磁性层的离子束蚀刻具有增加的参考层各向异性

    公开(公告)号：US07446984B2

    公开(公告)日：2008-11-04

    申请号：US11542086

    申请日：2006-10-02

    Applicant: Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    Inventor： Matthew Joseph Carey ,  Jeffrey Robinson Childress ,  Stefan Maat

    IPC: G11B5/39

    CPC classification number: G11B5/3166 ,  G11B5/3163 ,  G11B5/3196 ,  G11B5/3932 ,  G11C11/14 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49044 ,  Y10T29/49046

    Abstract: A Magnetic Random Access Memory (MRAM) cell and array for storing data. The MRAM array includes a memory cell having a magnetic pinned layer, a magnetic free layer and a non-magnetic spacer or barrier layer sandwiched between the pinned and free layer. The pinned layer has magnetization that is pinned, and the free layer has a magnetization that is free to rotate but is stable in directions that are parallel or antiparallel with the magnetization of the pinned layer. The free layer has a magnetic anisotropy the maintains the stability of the free layer magnetization. The free layer anisotropy is induced by a surface roughness either in the surface of the free layer itself, or in the surface of the underling barrier/spacer layer. This anisotropic roughness is induced by an angled direct ion milling.

    Abstract translation: 用于存储数据的磁随机存取存储器（MRAM）单元和阵列。 MRAM阵列包括具有磁性被钉扎层，磁性自由层和夹在被钉扎层和自由层之间的非磁性间隔物或阻挡层的存储单元。 钉扎层具有被钉扎的磁化，并且自由层具有自由旋转的磁化，但是在与被钉扎层的磁化平行或反平行的方向上是稳定的。 自由层具有磁各向异性，保持自由层磁化的稳定性。 自由层各向异性由自由层本身的表面或下层阻挡层/间隔层的表面中的表面粗糙度引起。 这种各向异性的粗糙度是由倾斜的直接离子铣削引起的。

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