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    Manufacturing method of semiconductor device, and semiconductor device
    1.
    发明授权
    Manufacturing method of semiconductor device, and semiconductor device 有权
    半导体器件的制造方法以及半导体器件

    公开(公告)号：US08535479B2

    公开(公告)日：2013-09-17

    申请号：US13311634

    申请日：2011-12-06

    申请人： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

    发明人： Norikazu Mizuno ,  Kenji Kanayama ,  Kazuyuki Okuda ,  Yoshiro Hirose ,  Masayuki Asai

    IPC分类号： H01L21/306

    CPC分类号： C23C16/402 ,  C23C16/042 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/3141 ,  H01L21/31608

    摘要： Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.

    摘要翻译： 提供了一种基板处理装置，包括：处理基板的处理室; 用于将Si材料，氧化材料和催化剂供应到处理室中的材料供应单元; 用于加热衬底的加热单元; 以及用于至少控制所述材料供应单元和所述加热单元的控制器，其中所述控制器被配置为控制所述加热单元以在低于第一光致抗蚀剂的变形温度的处理温度下形成的第一光致抗蚀剂图案来加热所述基板 构成第一光致抗蚀剂图案，并且控制材料供给单元交替地供给含硅材料和催化剂，并且以重复的方式将氧化材料和催化剂交替地供给到处理室中，以在基板上形成薄膜 其厚度等于第一光致抗蚀剂图案的一半间距的5％。

    Semiconductor device producing method
    4.
    发明授权
    Semiconductor device producing method 有权
    半导体器件制造方法

    公开(公告)号：US08058184B2

    公开(公告)日：2011-11-15

    申请号：US12652604

    申请日：2010-01-05

    申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

    发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

    摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

    摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中以与水相对于氢的比例为2×10-1或更低的方式在400℃下加热基板，并且向第一反应材料供给氢气和水。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    5.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
    制造半导体器件和衬底加工设备的方法

    公开(公告)号：US20110065289A1

    公开(公告)日：2011-03-17

    申请号：US12880287

    申请日：2010-09-13

    申请人： Masayuki ASAI

    发明人： Masayuki ASAI

    IPC分类号： H01L21/318 ,  C23C16/44

    CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/0228

    摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: supplying a silicon-containing gas into a process chamber in which a substrate is accommodated in a heated state; and supplying a nitrogen-containing gas into the process chamber. The supplying of the silicon-containing gas and the supplying of the nitrogen-containing gas are alternately repeated to form a silicon nitride film on the substrate. The process chamber is switched at least once between an exhaust stop state and an exhaust operation state during the supplying of the nitrogen-containing gas so as to vary an inside pressure of the process chamber in a manner such that the maximum inside pressure of the process chamber is twenty or more times the minimum inside pressure of the process chamber.

    摘要翻译： 提供了一种制造半导体器件的方法和可以提高氮化硅膜质量的衬底处理设备。 该方法包括：将含硅气体供应到处理室中，其中衬底被容纳在加热状态; 并向处理室供应含氮气体。 交替地重复供给含硅气体和含氮气体的供给，以在基板上形成氮化硅膜。 在供给含氮气体期间，处理室在排气停止状态和排气操作状态之间至少切换一次，以便以使得处理室的最大内部压力变化的方式改变处理室的内部压力 室是处理室的最小内部压力的二十或更多倍。

    PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    6.
    发明申请
    PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
    半导体器件和衬底加工设备的生产方法

    公开(公告)号：US20100233887A1

    公开(公告)日：2010-09-16

    申请号：US12788697

    申请日：2010-05-27

    申请人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

    发明人： Hironobu Miya ,  Kazuyuki Toyoda ,  Norikazu Mizuno ,  Taketoshi Sato ,  Masanori Sakai ,  Masayuki Asai ,  Kazuyuki Okuda ,  Hideki Horita

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

    CPC分类号： C23C16/403 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45546 ,  C23C16/509 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3162 ,  H01L21/3185

    摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.

    摘要翻译： 一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体 第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤 从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体 在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的 施加指定次数，直到在基板表面上形成所需厚度的膜。