Process for production of cross copolymers, cross copolymers obtained by the process, and use thereof
    1.
    发明授权
    Process for production of cross copolymers, cross copolymers obtained by the process, and use thereof 有权
    用于生产交联共聚物的方法,通过该方法获得的交联共聚物及其用途

    公开(公告)号:US08722831B2

    公开(公告)日:2014-05-13

    申请号:US12302818

    申请日:2007-05-29

    Abstract: To provide a novel cross copolymer and resin composition which are improved in heat resistance and compatibility over conventional ethylene/aromatic vinyl compound copolymers and which have low crystallinity, are excellent in softness, transparency and compatibility and show mechanical properties similar to soft vinyl chloride resins, as compared with conventional cross copolymers.A process for producing a cross copolymer, which comprises a coordination polymerization step and a subsequent anionic polymerization step, wherein in the coordination polymerization step, copolymerization of an olefin monomer, an aromatic vinyl compound monomer and an aromatic polyene is carried out by using a single-site coordination polymerization catalyst to synthesize an olefin/aromatic vinyl compound/aromatic polyene copolymer, and then, in the anionic polymerization step, polymerization is carried out in the coexistence of such an olefin/aromatic vinyl compound/aromatic polyene copolymer and an anionic polymerizable vinyl compound monomer by using an anionic polymerization initiator.

    Abstract translation: 为了提供与常规乙烯/芳族乙烯基化合物共聚物相比耐热性和相容性提高并且结晶度低的新型交联共聚物和树脂组合物,其柔软性,透明性和相容性优异,并且具有类似于软氯乙烯树脂的机械性能, 与常规交联共聚物相比。 一种制备交联共聚物的方法,其包括配位聚合步骤和随后的阴离子聚合步骤,其中在配位聚合步骤中,烯烃单体,芳族乙烯基化合物单体和芳族多烯的共聚通过使用单 - 配位聚合催化剂合成烯烃/芳族乙烯基化合物/芳族多烯共聚物,然后在阴离子聚合步骤中,聚合是在这种烯烃/芳族乙烯基化合物/芳族多烯共聚物和阴离子可聚合的共聚物共存的情况下进行的 乙烯基化合物单体。

    Semiconductor device with leakage current compensating circuit
    2.
    发明申请
    Semiconductor device with leakage current compensating circuit 有权
    具有漏电流补偿电路的半导体器件

    公开(公告)号:US20060097774A1

    公开(公告)日:2006-05-11

    申请号:US11270480

    申请日:2005-11-10

    Inventor: Masaru Hasegawa

    CPC classification number: G05F3/262 H03K19/00361

    Abstract: A semiconductor device includes a current mirror circuit having a plurality of transistors; a current source configured to supply a constant reference current to the current mirror circuit through a node; and a compensating circuit configured to supply a compensation current to the node to compensate for at least a part of gate leakage currents of the plurality of transistors. The compensating circuit may supply the compensation current equal to a summation of the gate leakage currents.

    Abstract translation: 半导体器件包括具有多个晶体管的电流镜电路; 电流源,被配置为通过节点向电流镜电路提供恒定的参考电流; 以及补偿电路,被配置为向所述节点提供补偿电流以补偿所述多个晶体管的栅极泄漏电流的至少一部分。 补偿电路可以提供等于栅极漏电流的总和的补偿电流。

    Automotive headlamp
    3.
    发明授权
    Automotive headlamp 失效
    汽车前大灯

    公开(公告)号:US06979110B2

    公开(公告)日:2005-12-27

    申请号:US10731934

    申请日:2003-12-09

    CPC classification number: F21S41/28 F21S41/29

    Abstract: In an automotive headlamp 10, a lens flange portion 24 is caused to extend from a circumferential edge 23 of a lens surface 18 formed into a configuration which follows the outline of an external surface 19 of a vehicle body toward a lamp housing 11, a surface-roughening process is applied to a surface 25 of an end portion of the lens flange portion 24 to make irregular the surface 25 of the end portion, and a leg portion 28 is caused to extend from a location 27 which deviates from the surface 25 of the end portion in such a manner as to bypass the surface 25 of the end portion, so that the leg portion 28 fits in the lamp housing 11.

    Abstract translation: 在汽车前照灯10中,使透镜凸缘部24从形成为与车身外表面19的轮廓相对的形状的透镜面18的周缘23延伸到灯壳体11, 对透镜凸缘部24的端部的表面25施加增韧过程,使端部的表面25变得不规则,并且使腿部28从偏离表面25的位置27延伸 该端部以这样的方式绕过端部的表面25,使得腿部28装配在灯壳体11中。

    SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT COMPENSATING CIRCUIT
    5.
    发明申请
    SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT COMPENSATING CIRCUIT 审中-公开
    具有泄漏电流补偿电路的半导体器件

    公开(公告)号:US20070285153A1

    公开(公告)日:2007-12-13

    申请号:US11830259

    申请日:2007-07-30

    Inventor: Masaru HASEGAWA

    CPC classification number: G05F3/262 H03K19/00361

    Abstract: A semiconductor device includes a current mirror circuit having a plurality of transistors; a current source configured to supply a constant reference current to the current mirror circuit through a node; and a compensating circuit configured to supply a compensation current to the node to compensate for at least a part of gate leakage currents of the plurality of transistors. The compensating circuit may supply the compensation current equal to a summation of the gate leakage currents.

    Abstract translation: 半导体器件包括具有多个晶体管的电流镜电路; 电流源,被配置为通过节点向电流镜电路提供恒定的参考电流; 以及补偿电路,被配置为向所述节点提供补偿电流以补偿所述多个晶体管的栅极泄漏电流的至少一部分。 补偿电路可以提供等于栅极漏电流的总和的补偿电流。

    Bacillus strains which produce HMG-CoA reductase inhibitors
    6.
    发明授权
    Bacillus strains which produce HMG-CoA reductase inhibitors 有权
    产生HMG-CoA还原酶抑制剂的芽孢杆菌菌株

    公开(公告)号:US06468780B2

    公开(公告)日:2002-10-22

    申请号:US09829080

    申请日:2001-04-10

    CPC classification number: C12R1/07 C12P7/62 C12P17/06

    Abstract: Disclosed is a process for producing a compound represented by general formula (II-a): (wherein R1 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or an alkali metal; and R2 represents a substituted or unsubstituted alkyl or aryl group) [hereinafter referred to as Compound (II-a)] or the lactone form of Compound (II-a) [hereinafter referred to as Compound (II-b)] which comprises subjecting a compound represented by general formula (I-a): (wherein R1 represents a hydrogen atom, a substituted or unsubstituted alkyl group, or an alkali metal; and R2 represents a substituted or unsubstituted alkyl or aryl group) [hereinafter referred to as Compound (I-a)] or the lactone form of Compound (I-a) [hereinafter referred to as Compound (I-b)] to the action of an enzyme source derived from a microorganism belonging to the genus Bacillus and capable of converting Compound (I-a) or Compound (I-b) into Compound (II-a) or Compound (II-b) in a reaction mixture to form Compound (II-a) or Compound (II-b) in the reaction mixture, and recovering Compound (II-a) or Compound (II-b) from the reaction mixture.

    Abstract translation: 公开了一种制备由通式(II-a)表示的化合物的方法:其中R 1表示氢原子,取代或未取代的烷基或碱金属; R 2表示取代或未取代的烷基或芳基) [化学式(II-a)]或化合物(II-a)的内酯形式[以下称为化合物(II-b)]] [其中包括使通式(Ia)表示的化合物 R1表示氢原子,取代或未取代的烷基或碱金属; R2表示取代或未取代的烷基或芳基)[以下称为化合物(Ia)]或化合物(Ia)的内酯形式[ (Ia)或化合物(Ib)转化为化合物(II-a)或化合物(II-a)的酶源的作用,以下称为化合物(Ib) b)在反应混合物中形成化合物(II -a)或化合物(II-b),并从反应混合物中回收化合物(II-a)或化合物(II-b)。

    MULTIPROCESSOR SYSTEM
    8.
    发明申请
    MULTIPROCESSOR SYSTEM 有权
    多处理器系统

    公开(公告)号:US20130298136A1

    公开(公告)日:2013-11-07

    申请号:US13979425

    申请日:2011-12-21

    CPC classification number: G06F9/50 G06F9/5011 G06F9/52 G06F9/526

    Abstract: A multiprocessor system includes plural processing parts configured to execute a program stored in a program memory; a common resource shared by the processing parts; a resource status table in which an occupation status of the common resource is written; a resource access table in which address areas are associated with occupation manners of the common resource on a function basis of the program stored in the program memory; and a controlling part configured to determine whether to permit execution of a function which involves occupation of the common resource by one of the processing parts using the resource status table and the resource access table.

    Abstract translation: 多处理器系统包括被配置为执行存储在程序存储器中的程序的多个处理部件; 处理部分共享的共同资源; 资源状态表,其中写入公用资源的占用状态; 资源访问表,其中地址区域与存储在程序存储器中的程序的功能基础上与公共资源的占用方式相关联; 以及控制部,被配置为使用所述资源状态表和所述资源访问表来确定是否允许通过所述处理部中的一个执行涉及所述公共资源的功能的功能。

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