公开(公告)号：US07157294B2

公开(公告)日：2007-01-02

申请号：US10162255

申请日：2002-06-05

申请人： Toshiya Uemura ,  Masaki Hashimura

发明人： Toshiya Uemura ,  Masaki Hashimura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.

摘要翻译： 在倒装芯片型III族氮化物化合物半导体发光元件中，作为发光面的基板的表面形成为粗糙面，使得辐射光被表面散射。

公开(公告)号：US06960485B2

公开(公告)日：2005-11-01

申请号：US10375135

申请日：2003-02-28

申请人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

发明人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01L21/00

CPC分类号： H01L33/46 ,  H01L33/0095 ,  H01L33/32

摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

摘要翻译： 形成用于将半导体晶片分离成各个发光器件的分离槽的工艺，用于使基板变薄的工艺，将晶片粘附到粘合片上以暴露晶片背面或背面的基板表面的处理，划线 在基板上形成分割线以将晶片分割成发光器件的工艺，以及形成包括透光层，反射层和耐腐蚀层的反射镜结构的工艺，其顺序地使用溅射 或沉积工艺。 由于透光层层压在粘合片上，所以通常从粘合材料挥发的气体被密封，并且不与作为反射层沉积的金属化学结合。 结果，可以保持反射层的反射率。

公开(公告)号：US06956245B2

公开(公告)日：2005-10-18

申请号：US10448025

申请日：2003-05-30

申请人： Masanobu Senda ,  Toshiya Uemura ,  Hideki Omoya ,  Masaki Hashimura

发明人： Masanobu Senda ,  Toshiya Uemura ,  Hideki Omoya ,  Masaki Hashimura

IPC分类号： H01L33/10 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/32 ,  H01L33/46 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265

摘要： A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).

摘要翻译： III族氮化物化合物半导体发光元件在与发光层观察的元件的主发光面相反的一侧具有反射面。 反射面倾斜于半导体层的生长面。 从发光层发射的光被反射面反射，使得反射光从发光元件的侧面向外侧射出而不通过半导体层（特别是发光层）。

公开(公告)号：US20050133799A1

公开(公告)日：2005-06-23

申请号：US11034261

申请日：2005-01-13

申请人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

发明人： Toshiya Uemura ,  Naohisa Nagasaka ,  Masaki Hashimura ,  Atsuo Hirano ,  Hiroshi Tadano ,  Tetsu Kachi ,  Hideki Hosokawa

IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60 ,  H01L21/00 ,  H01L27/10 ,  H01L27/15 ,  H01L29/26 ,  H01L29/74 ,  H01L31/12

CPC分类号： H01L33/46 ,  H01L33/0095 ,  H01L33/32

摘要： A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

公开(公告)号：US07183136B2

公开(公告)日：2007-02-27

申请号：US10601310

申请日：2003-06-23

申请人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

发明人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

IPC分类号： H01L21/44

CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/32341

摘要： A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

摘要翻译： 在用于进行元件形成和电极形成的基板上形成多个III族氮化物化合物半导体层。 分离线上的III族氮化物化合物半导体层通过由于切割机的蚀刻或切割而被去除，使得仅在衬底附近的电极形成层保留或不存在第III族氮化物化合物半导体层在分型线上。 在整个前表面上形成保护膜。 通过激光束照射在基板的前表面形成分离槽。 保护膜与通过激光束照射产生的反应产物一起除去。 抛光衬底1的后表面以减小衬底的厚度。 然后，在基板的后表面形成与格子状的分割线对应的后槽。 衬底沿着分型线分成单独的元件。

公开(公告)号：US07121925B2

公开(公告)日：2006-10-17

申请号：US10240251

申请日：2001-03-14

申请人： Masaki Hashimura ,  Takao Sato ,  Koichi Ota

发明人： Masaki Hashimura ,  Takao Sato ,  Koichi Ota

IPC分类号： H01L21/00

CPC分类号： H01L21/3046 ,  H01L21/3043 ,  H01L21/3081 ,  H01L21/78

摘要： A method for dividing a semiconductor wafer into chips according to the present invention is a method for dividing a semiconductor wafer into a large number of semiconductor chips, the semiconductor wafer having a semiconductor layer formed on a substrate. A first method includes the step of forming a blast-resistant mask on a surface of the semiconductor wafer, the blast-resistant mask having a pattern for leaving a grid-like exposed portion as it is and the step of blasting a fine particular blast material to thereby form dividing grooves reaching a predetermined depth of the substrate in the grid-like exposed portion. A second method includes the step of forming first dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is formed, by dicing, etching or blasting, so that the first dividing grooves have a relatively narrow groove width, and the step of forming second dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is not formed by dicing, and in positions corresponding to the first dividing grooves, so that the second dividing grooves have a relatively wide groove width.

公开(公告)号：US20050186760A1

公开(公告)日：2005-08-25

申请号：US10601310

申请日：2003-06-23

申请人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

发明人： Masaki Hashimura ,  Shigeki Konishi ,  Naohisa Nagasaka

IPC分类号： B23K26/40 ,  H01L21/301 ,  H01L21/78 ,  H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323

CPC分类号： B23K26/009 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/32 ,  H01S5/0201 ,  H01S5/32341

摘要： A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrate 1s is polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

摘要翻译： 在用于进行元件形成和电极形成的基板上形成多个III族氮化物化合物半导体层。 分离线上的III族氮化物化合物半导体层通过由于切割机的蚀刻或切割而被去除，使得仅在衬底附近的电极形成层保留或不存在第III族氮化物化合物半导体层在分型线上。 在整个前表面上形成保护膜。 通过激光束照射在基板的前表面形成分离槽。 保护膜与通过激光束照射产生的反应产物一起除去。 抛光衬底1的后表面以减小衬底的厚度。 然后，在基板的后表面形成与格子状的分割线对应的后槽。 衬底沿着分型线分成单独的元件。

公开(公告)号：US20050003632A1

公开(公告)日：2005-01-06

申请号：US10488867

申请日：2002-07-12

申请人： Masaru Onishi ,  Masaki Hashimura

发明人： Masaru Onishi ,  Masaki Hashimura

IPC分类号： H01L21/301 ,  H01L33/32 ,  H01S5/02 ,  H01L21/46 ,  H01L21/78

CPC分类号： H01S5/0213 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/3202

摘要： A method for cutting a sapphire substrate whose A plane functions as a main surface is carried out after forming a semiconductor device or in order to form a device. Here a just A plane of the sapphire substrate is represented by a (11-20) plane, a line of intersection of the main surface and at least one of a (10-12) plane and a (0-112) plane is defined as a base line and a direction which an angle decreases as it reaches the axis c is defined as a positive direction. In that case, a separation line is formed along a first direction which makes an angle of 0 to 4 degrees with the line of intersection and a second direction which is perpendicular to the first direction.

摘要翻译： 在形成半导体器件之后进行A面用作主面的蓝宝石衬底的切割方法，或者形成器件。 这里，蓝宝石衬底的只有A平面由（11-20）面表示，主表面与a（10-12）面和（0-112）面中的至少一个相交线被定义 作为基线，并且当其到达轴线c时角度减小的方向被定义为正方向。 在这种情况下，沿与第一方向垂直的第二方向与第一方向成一角度为0〜4度的分离线。