公开(公告)号：US4509066A

公开(公告)日：1985-04-02

申请号：US509175

申请日：1983-06-29

申请人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

发明人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

IPC分类号： C30B23/08 ,  H01L21/203 ,  H01L21/314 ,  H01L21/3205 ,  H01L29/51 ,  H01L51/05 ,  H01L49/02 ,  C23C15/00

CPC分类号： H01L29/51 ,  H01L21/314 ,  H01L21/32051 ,  H01L51/0508 ,  H01L51/0512 ,  Y10S428/938 ,  Y10T428/12528

摘要： Amorphous and polycrystalline films of KP.sub.15 are formed by RF diode sputtering targets of KP.sub.15 and excess phosphorus in an argon phase. Substrate temperatures up to 280.degree.-300.degree. C. provide amorphous films. Higher temperatures provide microcrystalline or polycrystalline films. These films have high resistance and may be used as the insulator in MIS devices employing III-V semiconductors. Co-sputtering with nickel increases the conductivity of the films from approximately 10.sup.-10 (ohm-cm).sup.-1 to 10.sup.-2 (ohm-cm).sup.-1 ; only reduces the optical gap by 0.2 eV; and reduces the activation energy from 0.8 eV to 0.2 eV; the nickel content varying from 5-15%. Substrates include glass, silicon, tantalum, stainless steel, gallium phosphide and gallium arsenide, and glass metallized with metals such as titanium, nickel and aluminum. Double diode electrical characteristics have been observed in devices formed on metallized glass substrates having co-sputtered thereon thin film polyphosphides and nickel with nickel and titanium top contacts.

摘要翻译： KP15的非晶态和多晶膜由氩离子中的KP15的RF二极管溅射靶和过量的磷形成。 基板温度高达280°-300℃，提供非晶膜。 较高的温度提供微晶或多晶膜。 这些膜具有高电阻，并且可以用作使用III-V半导体的MIS器件中的绝缘体。 用镍共溅射使膜的导电率从大约10-10（ohm-cm）-1增加到10-2（ohm-cm）-1; 仅将光学间隙减小了0.2eV; 并将活化能从0.8eV降低到0.2eV; 镍含量从5-15％变化。 基板包括玻璃，硅，钽，不锈钢，磷化镓和砷化镓，以及金属如钛，镍和铝金属化的玻璃。 已经在具有共溅射薄膜多磷化物的金属化玻璃基板上形成的器件和镍和钛顶部触点的镍中观察到二极管电特性。

公开(公告)号：US4696828A

公开(公告)日：1987-09-29

申请号：US736750

申请日：1985-05-21

申请人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz ,  Diego J. Olego ,  Harvey B. Serreze ,  Paul M. Raccah

发明人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz ,  Diego J. Olego ,  Harvey B. Serreze ,  Paul M. Raccah

IPC分类号： H01L21/306 ,  H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/00 ,  H01L33/44 ,  H01L51/05 ,  B05D3/06

CPC分类号： H01L33/44 ,  H01L21/02052 ,  H01L21/30621 ,  H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L31/02161 ,  H01L31/18 ,  H01L33/0062 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L51/0508 ,  H01L51/0512 ,  Y10S438/958

摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.

摘要翻译： 在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。 薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。 这些层在III-V晶体的<100> <110>和<111>表面上生长。 第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。 这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电二极管的性能， 诸如发光二极管，激光器，太阳能电池，光电阴极和光电检测器的电子器件。 可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。 磷化氢可以是磷，砷，锑或铋，或它们的组合。

公开(公告)号：US4732659A

公开(公告)日：1988-03-22

申请号：US796429

申请日：1985-11-08

申请人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

发明人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

IPC分类号： C23C14/35 ,  H01L21/314 ,  H01L21/34 ,  H01L21/363 ,  H01L21/479 ,  H01L29/24 ,  H01L29/49 ,  H01L29/812 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40 ,  C23C14/34

CPC分类号： H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02631 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/8126 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/001

摘要： Thin film field effect transistors utilize MP.sub.x as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassium is preferred as the dominant alkali metal. The local order of the semiconductors may vary from an all parallel pentagonal tube-like structure to a layer-like puckered sheet structure. The all parallel pentagonal tube structure is preferred. Metal insulated semiconductor (MISFETS) and metal semiconductor (MESFETS) field effect transistors are disclosed. The semiconductor is preferably doped with up to approximately 1/2% nickel, iron, or chromium, to reduce the density of defect levels in the bandgap without increasing the conductivity. The semiconductors may be doped with 1/2-1% of the same metals to increase conductivity so as to provide normally ON devices. The regions of a semiconductor under the source and drain may be heavily doped with 2-3% of the same metals to provide good contact to the source and drain. Nickel is the preferred metal.The insulating layer may be SiO.sub.2, Al.sub.2 O.sub.3, or Si.sub.3 N.sub.4, but is preferably P.sub.3 N.sub.5 to provide chemical continuity to the polypnictide semiconductor. The pnictide layer is preferably deposited by RF plasma sputtering in the presence of excess P.sub.4 molecules in an argon atmosphere. P.sub.3 N.sub.5 is deposited also by RF plasma sputtering also utilizing P.sub.4 vapor but in a nitrogen atmosphere. When the layers are adjacent, this may be done without breaking the vacuum.

摘要翻译： 薄膜场效应晶体管利用MPx作为有源开关半导体，其中M为至少一种碱金属，P为至少一个碱金属，x为15至无穷大。 作为主要的碱金属优选磷，优选钾作为主要的碱金属。 半导体的局部顺序可以从所有平行的五边形管状结构变为层状褶皱的片状结构。 所有平行五边形管结构是优选的。 公开了金属绝缘半导体（MISFETS）和金属半导体（MESFETS）场效应晶体管。 该半导体优选掺杂高达约1/2的镍，铁或铬，以降低带隙中缺陷水平的密度而不增加导电性。 半导体可以掺杂1 / 2-1％的相同金属以增加导电性，从而提供通常的ON器件。 源极和漏极之间的半导体的区域可以重掺杂2-3％的相同金属，以提供与源极和漏极的良好接触。 镍是首选的金属。 绝缘层可以是SiO 2，Al 2 O 3或Si 3 N 4，但优选为P3N5，以提供对聚合物半导体的化学连续性。 在氩气气氛中优选通过RF等离子体溅射在多余的P4分子的存在下沉积pnictide层。 P3N5还通过RF等离子体溅射沉积，也利用P4蒸气，但在氮气气氛中。 当层相邻时，这可以在不破坏真空的情况下完成。

公开(公告)号：US4558340A

公开(公告)日：1985-12-10

申请号：US619053

申请日：1984-06-11

申请人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

发明人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz

IPC分类号： H01L21/205 ,  H01L21/314 ,  H01L21/338 ,  H01L21/363 ,  H01L27/12 ,  H01L29/12 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/812 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0541 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02581 ,  H01L21/314 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/8126 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L29/517 ,  H01L29/518 ,  H01L51/001

摘要： Thin film field effect transistors utilize MP.sub.x as the active switched semiconductor where M is at least one alkali metal, P is at least one pnictide, and x ranges from 15 to infinity. Phosphorus is preferred as the dominant pnictide and potassium is preferred as the dominant alkali metal. The local order of the semiconductors may vary from an all parallel pentagonal tube-like structure to a layer-like puckered sheet structure. The all parallel pentagonal tube structure is preferred. Metal insulated semiconductor (MISFETS) and metal semiconductor (MESFETS) field effect transistors are disclosed. The semiconductor is preferably doped with up to approximately 1/2% nickel, iron, or chromium, to reduce the density of defect levels in the bandgap without increasing the conductivity. The semiconductors may be doped with 1/2-1% of the same metals to increase conductivity so as to provide normally ON devices. The regions of a semiconductor under the source and drain may be heavily doped with 2-3% of the same metals to provide good contact to the source and drain. Nickel is the preferred metal. The insulating layer may be SiO.sub.2, Al.sub.2 O.sub.3, or Si.sub.3 N.sub.4, but is preferably P.sub.3 N.sub.5 to provide chemical continuity to the polypnictide semiconductor.

摘要翻译： 薄膜场效应晶体管利用MPx作为有源开关半导体，其中M为至少一种碱金属，P为至少一个碱金属，x为15至无穷大。 作为主要的碱金属优选磷，优选钾作为主要的碱金属。 半导体的局部顺序可以从所有平行的五边形管状结构变为层状褶皱的片状结构。 所有平行五边形管结构是优选的。 公开了金属绝缘半导体（MISFETS）和金属半导体（MESFETS）场效应晶体管。 该半导体优选掺杂高达约1/2的镍，铁或铬，以降低带隙中缺陷水平的密度而不增加导电性。 半导体可以掺杂1 / 2-1％的相同金属以增加导电性，从而提供通常的ON器件。 源极和漏极之间的半导体的区域可以重掺杂2-3％的相同金属，以提供与源极和漏极的良好接触。 镍是首选的金属。 绝缘层可以是SiO 2，Al 2 O 3或Si 3 N 4，但优选为P3N5，以提供对聚合物半导体的化学连续性。