公开(公告)号：US4678266A

公开(公告)日：1987-07-07

申请号：US695255

申请日：1985-01-28

申请人： Diego J. Olego

发明人： Diego J. Olego

IPC分类号： H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L33/00 ,  G02B6/10

CPC分类号： H01L23/3171 ,  H01L21/314 ,  H01L23/291 ,  H01L2924/0002

摘要： The semiconductor layer of an opto-electronic device has one or more films of a pnictide rich material deposited thereon. The pnictide has a smaller reflective index than the semiconductor layer. These films provide a wave-guiding effect to light within the semiconductor layer in opto-electronic devices, such as solid state lasers and light emitting diodes and wave guides interconnecting such devices.

摘要翻译： 光电子器件的半导体层具有沉积在其上的富含pnictide的材料的一个或多个膜。 pnictide具有比半导体层更小的反射指数。 这些膜对诸如固态激光器和发光二极管的光电子器件中的半导体层内的光提供波导效应，以及互连这种器件的波导。

公开(公告)号：US5247349A

公开(公告)日：1993-09-21

申请号：US571033

申请日：1990-08-22

申请人： Diego J. Olego ,  John A. Baumann ,  Rozalie Schachter ,  Harvey B. Serreze ,  William E. Spicer ,  Paul M. Raccah

发明人： Diego J. Olego ,  John A. Baumann ,  Rozalie Schachter ,  Harvey B. Serreze ,  William E. Spicer ,  Paul M. Raccah

IPC分类号： C03C17/22 ,  H01L21/314 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/31 ,  H01L29/24 ,  H01L29/51 ,  H01L31/032 ,  H01L51/05

CPC分类号： H01L23/3171 ,  C03C17/22 ,  H01L21/314 ,  H01L21/32051 ,  H01L23/291 ,  H01L29/24 ,  H01L29/51 ,  H01L31/032 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L51/0508 ,  H01L51/0512

摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.

摘要翻译： 在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。 薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。 这些层在<100> 110>和III-V晶体的表面上生长。 第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。 这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高 光电子器件如发光二极管，激光器，太阳能电池，光电阴极和光电探测器。 可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。 磷化氢可以是磷，砷，锑或铋，或它们的组合。

公开(公告)号：US4696828A

公开(公告)日：1987-09-29

申请号：US736750

申请日：1985-05-21

申请人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz ,  Diego J. Olego ,  Harvey B. Serreze ,  Paul M. Raccah

发明人： Rozalie Schachter ,  Marcello Viscogliosi ,  Lewis A. Bunz ,  Diego J. Olego ,  Harvey B. Serreze ,  Paul M. Raccah

IPC分类号： H01L21/306 ,  H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L31/0216 ,  H01L31/18 ,  H01L33/00 ,  H01L33/44 ,  H01L51/05 ,  B05D3/06

CPC分类号： H01L33/44 ,  H01L21/02052 ,  H01L21/30621 ,  H01L21/314 ,  H01L23/291 ,  H01L23/3171 ,  H01L31/02161 ,  H01L31/18 ,  H01L33/0062 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L51/0508 ,  H01L51/0512 ,  Y10S438/958

摘要： Pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP, and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms thick and grown preferably by molecular beam deposition, although other processes such as vacuum evaporation, sputtering, chemical vapor deposition, and deposition from a liquid melt may be used. The layers are grown on the , and surfaces of the III-V crystals. The pnictide layer reduces the density of surface states, and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased, and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metalsemiconductor (Schottky) devices for example to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes, and to improve performance of opto-electronic devices such as light emitting diodes, lasers, solar cells, photo cathodes and photo detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof.

摘要翻译： 在III-V族半导体，特别是InP，GaP和GaAs上生长的Pnictide薄膜，特别是磷是非晶态的，并且具有新颖的层状褶皱片状局部顺序。 薄膜通常为400埃厚，优选通过分子束沉积生长，尽管可以使用诸如真空蒸发，溅射，化学气相沉积和来自液体熔融的沉积等其它工艺。 这些层在III-V晶体的<100> <110>和<111>表面上生长。 第一层降低表面状态的密度，并且允许耗尽层被调制，表面阻挡减小，表面的电子浓度增加，并且表面复合速度降低，并且光致发光强度增加。 这些层可以用于MIS和金属半导体（肖特基）器件中，例如绝缘和钝化MISFET，钝化MESFETS，以减少PIN和雪崩二极管中的反向偏置暗电流的表面电流分量，并且提高光电二极管的性能， 诸如发光二极管，激光器，太阳能电池，光电阴极和光电检测器的电子器件。 可以将pnictide层应用于具有pnictide成分的金属间化合物和化合物半导体。 磷化氢可以是磷，砷，锑或铋，或它们的组合。