发明授权
US4678266A Use of pnictide films for wave-guiding in opto-electronic devices
失效
在光电器件中使用pnictide膜进行波导
- 专利标题： Use of pnictide films for wave-guiding in opto-electronic devices
- 专利标题（中）： 在光电器件中使用pnictide膜进行波导
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申请号： US695255申请日： 1985-01-28
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公开(公告)号： US4678266A公开(公告)日： 1987-07-07
- 发明人: Diego J. Olego
- 申请人： Diego J. Olego
- 申请人地址： CT Westport
- 专利权人： Stauffer Chemical Company
- 当前专利权人： Stauffer Chemical Company
- 当前专利权人地址： CT Westport
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L23/29 ; H01L23/31 ; H01L33/00 ; G02B6/10
摘要：
The semiconductor layer of an opto-electronic device has one or more films of a pnictide rich material deposited thereon. The pnictide has a smaller reflective index than the semiconductor layer. These films provide a wave-guiding effect to light within the semiconductor layer in opto-electronic devices, such as solid state lasers and light emitting diodes and wave guides interconnecting such devices.
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