公开(公告)号：US07911737B1

公开(公告)日：2011-03-22

申请号：US11726793

申请日：2007-03-23

申请人： Hai Jiang ,  Kyusik Sin

发明人： Hai Jiang ,  Kyusik Sin

IPC分类号： G11B5/31

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： The method and system for providing a perpendicular magnetic recording (PMR) head are described. The method and system include providing a metal underlayer and a PMR pole on the metal underlayer. The metal underlayer is amorphous. The PMR pole has a bottom and a top wider than the bottom. The PMR pole includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer. The first ferromagnetic layer is antiferromagnetically coupled with the second ferromagnetic layer. The second ferromagnetic layer is antiferromagnetically coupled with the third ferromagnetic layer.

摘要翻译： 描述了用于提供垂直磁记录（PMR）头的方法和系统。 该方法和系统包括在金属底层上提供金属底层和PMR极。 金属底层是无定形的。 PMR极具有底部和顶部宽于底部。 PMR极包括至少第一铁磁层，第二铁磁层和第三铁磁层。 第一铁磁层与第二铁磁层反铁磁耦合。 第二铁磁层与第三铁磁层反铁磁耦合。

公开(公告)号：US20090002885A1

公开(公告)日：2009-01-01

申请号：US11945479

申请日：2007-11-27

申请人： Kyusik SIN

发明人： Kyusik SIN

IPC分类号： G11B5/147 ,  H01L21/00

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163

摘要： Provided are a perpendicular magnetic recording (PMR) head and a method of manufacturing the same. The PMR head includes a main pole, a return yoke, and a coil to which current is supplied so that the main pole generates a magnetic field required for recording data in a recording medium. The PMR head further includes side shields disposed on both sides of the main pole to be spaced a first gap apart from the main pole; and a top shield disposed opposite the main pole and the side shields to be spaced a second gap apart from the main pole and the side shields at one end of the return yoke.

摘要翻译： 提供了一种垂直磁记录（PMR）头及其制造方法。 PMR头包括主极，返回轭和提供电流的线圈，使得主极产生在记录介质中记录数据所需的磁场。 PMR头还包括设置在主极两侧以与主极分开的第一间隙的侧屏蔽; 以及与所述主极和所述侧屏蔽相对设置的顶部屏蔽件，所述顶部屏蔽件在所述返回轭的一端处与所述主极和所述侧屏蔽物间隔开第二间隙。

公开(公告)号：US07289303B1

公开(公告)日：2007-10-30

申请号：US09828635

申请日：2001-04-05

申请人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

发明人： Kyusik Sin ,  Ningjia Zhu ,  Yingjian Chen

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  H01F10/3272 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed magnetic moment adjoining the exchange coupling layer. The exchange coupling layer and ferromagnetic layer form a synthetic antiferromagnetic structure with part of the free layer, providing bias that reduces magnetic instabilities at edges of the free layer. Such synthetic antiferromagnetic structures can provide a stronger bias than conventional antiferromagnetic layers, as well as a more exactly defined track width than conventional hard magnetic bias layers. The synthetic antiferromagnetic structures can also provide protection for the free layer during processing, in contrast with the trimming of conventional antiferromagnetic layers that exposes if not removes part of the free layer.

摘要翻译： 公开了具有减小诸如巴克豪森噪声等边缘效应的机构的磁阻（MR）传感器。 传感器包括钉扎层和具有邻接自由层的交换耦合层的自由层，以及具有与交换耦合层邻接的固定磁矩的铁磁层。 交换耦合层和铁磁层形成具有部分自由层的合成反铁磁结构，提供降低自由层边缘的磁性不稳定性的偏压。 这种合成反铁磁结构可以提供比常规反铁磁层更强的偏压，以及比常规硬磁偏置层更精确地定义的轨道宽度。 合成反铁磁性结构也可以在加工过程中为自由层提供保护，与如果不除去部分自由层的常规反铁磁层的修整相反。

公开(公告)号：US06713801B1

公开(公告)日：2004-03-30

申请号：US10192430

申请日：2002-07-09

申请人： Kyusik Sin ,  Hugh C. Hiner ,  Xizeng Shi

发明人： Kyusik Sin ,  Hugh C. Hiner ,  Xizeng Shi

IPC分类号： H01L2976

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/222

摘要： A method and system for providing a tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to an &agr;-Ta lead.

摘要翻译： 公开了一种用于提供隧道结的方法和系统。 该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。 自由层和钉扎层是铁磁性的。 阻挡层是绝缘体。 磁性隧道结与α-Ta引线耦合。

公开(公告)号：US08333008B1

公开(公告)日：2012-12-18

申请号：US11192591

申请日：2005-07-29

申请人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

发明人： Kyusik Sin ,  Lei Wang ,  Yingjian Chen

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3169 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for fabricating a perpendicular magnetic recording head, and the head so formed, are described. The method includes depositing an underlayer directly on an insulating layer. The underlayer preferably includes at least one of a nonferromagnetic metal, silicon oxide, and silicon nitride. A pole layer, which has a pole removal rate, is provided on the underlayer. The method and system further include forming a perpendicular magnetic recording pole from the pole layer. The perpendicular magnetic recording pole has a top and a bottom that is narrower than the top. The process of forming the perpendicular magnetic recording pole further includes removing a portion of the pole layer such that a pole removal rate for the pole layer is less than or substantially equal to a removal rate of the underlayer during the removing step.

摘要翻译： 描述了用于制造垂直磁记录头和如此形成的头的方法和系统。 该方法包括直接在绝缘层上沉积底层。 底层优选包括非铁磁金属，氧化硅和氮化硅中的至少一种。 在底层上提供具有极去除率的极层。 该方法和系统还包括从极层形成垂直磁记录极。 垂直磁记录极具有比顶部窄的顶部和底部。 形成垂直磁记录极的过程还包括去除极层的一部分，使得极层的极去除率小于或基本上等于在去除步骤期间底层的去除速率。

公开(公告)号：US20090067100A1

公开(公告)日：2009-03-12

申请号：US12061687

申请日：2008-04-03

申请人： Kyusik SIN

发明人： Kyusik SIN

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Provided are a magnetic head and a method of fabricating the same. The magnetic head includes a reading head having an acute or an obtuse inclined angle with respect to an air-bearing surface (ABS). In addition, the magnetic head includes a writing head having a magnetic coil that is formed in parallel with the reading head and the ABS. The method of fabricating the reading head includes forming a first shield layer, a reading sensor, and a second shield layer on an inclined surface of an insulating layer that is formed in a reading head area.

摘要翻译： 提供一种磁头及其制造方法。 磁头包括相对于空气轴承表面（ABS）具有锐角或钝角倾斜角的读头。 此外，磁头包括具有与读取头和ABS平行形成的电磁线圈的写入头。 制造读取头的方法包括在形成在读取头区域中的绝缘层的倾斜表面上形成第一屏蔽层，读取传感器和第二屏蔽层。

公开(公告)号：US07248431B1

公开(公告)日：2007-07-24

申请号：US10837350

申请日：2004-04-30

申请人： Yinshi Liu ,  Benjamin Chen ,  Kyusik Sin ,  Hongping Yuan

发明人： Yinshi Liu ,  Benjamin Chen ,  Kyusik Sin ,  Hongping Yuan

IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49052

摘要： A method of fabricating a write head for perpendicular recording is provided. The write head has a pole, a shield in proximity to the pole, and a gap between the pole and the shield. The method includes forming a pole layer on an undercoat layer, forming a mask over at least a portion of the pole layer, and forming the pole by removing material from the pole layer. The pole has a top surface, a first side, and a second side. The method further includes forming a first gap portion of the gap along the first side and along the second side of the pole, forming a protective layer over at least a portion of the first gap portion, removing the mask, and removing the protective layer. The method further includes forming a second gap portion of the gap over at least the top surface of the pole and forming the shield over at least the second gap portion.

摘要翻译： 提供一种制造用于垂直记录的写入头的方法。 写头具有极，靠近极的屏蔽，以及极与屏蔽之间的间隙。 该方法包括在底涂层上形成极层，在极层的至少一部分上形成掩模，并通过从极层去除材料形成极。 极具有顶表面，第一侧和第二侧。 该方法还包括沿着第一侧沿着极的第二侧形成间隙的第一间隙部分，在第一间隙部分的至少一部分上形成保护层，去除掩模，以及去除保护层。 所述方法还包括在至少所述极的顶表面上形成所述间隙的第二间隙部分，并在至少所述第二间隙部分上形成所述屏蔽。

公开(公告)号：US07177117B1

公开(公告)日：2007-02-13

申请号：US10853416

申请日：2004-05-24

申请人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

发明人： Hai Jiang ,  Kyusik Sin ,  Yingjian Chen

IPC分类号： G11B5/147

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/313 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T428/12465

摘要： A magnetic head comprising a first layer containing NiFe having a concentration of iron that is at least thirty percent and not more than seventy percent; a second layer that adjoins the first layer and contains FeCoN having a concentration of iron that is greater than the second layer's concentration of cobalt, having a concentration of nitrogen that is less than the second layer's concentration of cobalt and less than three percent; and a third layer containing FeCoNi having a concentration of nickel that is less than eight percent, having a concentration of cobalt that is less than the third layer's concentration of iron and greater than the third layer's concentration of nickel, the third layer adjoining only one of the first and second layers. The first and second layers may be repeated to form a magnetically soft high BS laminate for a pole layer.

摘要翻译： 磁头，其包含含有铁浓度为至少百分之三十且不超过百分之七十的NiFe的第一层; 邻接第一层并且含有铁浓度大于第二层钴浓度的FeCoN的第二层，其具有小于第二层的钴浓度的氮浓度小于3％; 以及第三层，其含有镍浓度小于8％的FeCoNi，其钴浓度小于第三层铁的浓度，大于第三层的镍浓度，第三层仅与 第一层和第二层。 可以重复第一层和第二层以形成用于极层的磁性柔软的高B层压板。

公开(公告)号：US07012832B1

公开(公告)日：2006-03-14

申请号：US10698747

申请日：2003-10-31

申请人： Kyusik Sin ,  Matthew R. Gibbons ,  William D. Jensen ,  Hugh Craig Hiner ,  Xizeng Stone Shi ,  Roberto Bez ,  Giulio Casagrande ,  Paolo Cappelletti

发明人： Kyusik Sin ,  Matthew R. Gibbons ,  William D. Jensen ,  Hugh Craig Hiner ,  Xizeng Stone Shi ,  Roberto Bez ,  Giulio Casagrande ,  Paolo Cappelletti

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic random access memory (MRAM) device has increased ΔR/R for sensing a state of a pin-dependent tunneling (SDT) device. The MRAM device includes plural transistors connected to a read line for sensing the state of the SDT device. Plural transistors lower an underlying resistance during reading, increasing ΔR/R. The plural transistors can share a source region.

摘要翻译： 磁性随机存取存储器（MRAM）器件增加了用于感测引脚依赖隧道（SDT）器件的状态的DeltaR / R。 MRAM器件包括连接到读取线的多个晶体管，用于感测SDT器件的状态。 多个晶体管在读取期间降低潜在电阻，增加DeltaR / R。 多个晶体管可以共享源极区域。

公开(公告)号：US06744608B1

公开(公告)日：2004-06-01

申请号：US10146517

申请日：2002-05-14

申请人： Kyusik Sin ,  Kristian M. Bjelland ,  Benjamin Chen ,  Hugh C. Hiner ,  Xizeng Shi

发明人： Kyusik Sin ,  Kristian M. Bjelland ,  Benjamin Chen ,  Hugh C. Hiner ,  Xizeng Shi

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

摘要： A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.

摘要翻译： 公开了一种用于提供隧道磁阻传感器的方法和系统。 该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和绝缘层。 固定和自由层是铁磁性的。 该方法和系统还包括提供用于在隧道磁阻传感器的顶部限定传感器的硬掩模层。 该方法和系统还包括使用硬掩模层来定义隧道磁阻传感器。 因此，被钉扎层，自由层和绝缘层能够具有小于0.2μm的最小尺寸。