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    High density coupling of quantum dots to carbon nanotube surface for efficient photodetection
    3.
    发明授权
    High density coupling of quantum dots to carbon nanotube surface for efficient photodetection 失效
    量子点高密度耦合到碳纳米管表面，以实现有效的光电检测

    公开(公告)号：US08003979B2

    公开(公告)日：2011-08-23

    申请号：US11673850

    申请日：2007-02-12

    申请人： Namchul Cho ,  Kaushik Roy Choudhury ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad

    发明人： Namchul Cho ,  Kaushik Roy Choudhury ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad

    IPC分类号： H01L51/46 ,  D01F9/12

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0037 ,  H01L51/0042 ,  H01L51/426 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/745 ,  Y10S977/847

    摘要： The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described.

    摘要翻译： 本发明涉及一种制备其表面上具有高密度量子点（QD）的碳纳米管 - 量子点共轭体的方法。 该方法包括提供多个半导体量子点，并在其表面上提供具有多个末端巯基的硫醇官能化碳纳米管。 在有效产生其表面上具有高密度的量子点的碳纳米管 - 量子点共轭体的条件下，多个半导体量子点附着在碳纳米管的表面上。 本发明还涉及其表面上具有高密度的量子点的碳纳米管 - 量子点共轭体。 本发明还涉及一种光检测器装置。 该器件包括衬底和纳米复合层。 纳米复合层包括前面描述的多个碳纳米管 - 量子点共轭物。

    HIGH DENSITY COUPLING OF QUANTUM DOTS TO CARBON NANOTUBE SURFACE FOR EFFICIENT PHOTODETECTION
    4.
    发明申请
    HIGH DENSITY COUPLING OF QUANTUM DOTS TO CARBON NANOTUBE SURFACE FOR EFFICIENT PHOTODETECTION 失效
    量子点与碳纳米管表面的高密度耦合，实现有效的光电转换

    公开(公告)号：US20100025662A1

    公开(公告)日：2010-02-04

    申请号：US11673850

    申请日：2007-02-12

    申请人： Namchul CHO ,  Kaushik Roy CHOUDHURY ,  Yudhisthira SAHOO ,  Kwang Sup LEE ,  Paras N. PRASAD

    发明人： Namchul CHO ,  Kaushik Roy CHOUDHURY ,  Yudhisthira SAHOO ,  Kwang Sup LEE ,  Paras N. PRASAD

    IPC分类号： H01L51/30 ,  G03B11/00

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0037 ,  H01L51/0042 ,  H01L51/426 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/745 ,  Y10S977/847

    摘要： The present invention relates to a method of preparing a carbon nanotube-quantum dot conjugate having a high density of quantum dots (QDs) on its surface. This method involves providing a plurality of semiconductor quantum dots and providing a thiol-functionalized carbon nanotube having a plurality of terminal thiol groups on its surface. The plurality of semiconductor quantum dots are attached to the surface of the carbon nanotube under conditions effective to yield a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention also relates to a carbon nanotube-quantum dot conjugate having a high density of quantum dots on its surface. The present invention further relates to a photodetector device. This device includes a substrate and a nanocomposite layer. The nanocomposite layer includes a plurality of the carbon nanotube-quantum dot conjugates previously described.

    摘要翻译： 本发明涉及一种制备其表面上具有高密度量子点（QD）的碳纳米管 - 量子点共轭体的方法。 该方法包括提供多个半导体量子点，并在其表面上提供具有多个末端巯基的硫醇官能化碳纳米管。 在有效产生其表面上具有高密度的量子点的碳纳米管 - 量子点共轭体的条件下，多个半导体量子点附着在碳纳米管的表面上。 本发明还涉及其表面上具有高密度的量子点的碳纳米管 - 量子点共轭体。 本发明还涉及一种光检测器装置。 该器件包括衬底和纳米复合层。 纳米复合层包括前面描述的多个碳纳米管 - 量子点共轭物。

    NANOCOMPOSITE DEVICES, METHODS OF MAKING THEM, AND USES THEREOF
    5.
    发明申请
    NANOCOMPOSITE DEVICES, METHODS OF MAKING THEM, AND USES THEREOF 审中-公开
    纳米复合器件，其制造方法及其用途

    公开(公告)号：US20080128021A1

    公开(公告)日：2008-06-05

    申请号：US11850929

    申请日：2007-09-06

    申请人： Kaushik Roy Choudhury ,  Won Jin Kim ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad ,  Alexander Cartwright ,  Ram B. Thapa

    发明人： Kaushik Roy Choudhury ,  Won Jin Kim ,  Yudhisthira Sahoo ,  Kwang Sup Lee ,  Paras N. Prasad ,  Alexander Cartwright ,  Ram B. Thapa

    IPC分类号： H01L31/04 ,  B05D5/12

    CPC分类号： H01L51/426 ,  B82Y30/00 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0042 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention relates to a nanocomposite device comprising a polymeric matrix, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. In addition, the present invention relates to a method of making a nanocomposite device. The method includes providing a mixture comprising a polymer, semiconducting nanoparticles, and a semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs or a soluble precursor thereof, depositing the mixture on a substrate, and treating the mixture under conditions effective to produce a nanocomposite device comprising the polymeric matrix, semiconducting nanoparticles, and the semiconducting molecule having a field-effect mobility of at least 0.1 cm2/Vs. Thin film devices including the nanocomposite device are also disclosed.

    摘要翻译： 本发明涉及包含聚合物基质，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子的纳米复合材料装置。 另外，本发明涉及制造纳米复合器件的方法。 该方法包括提供包含聚合物，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子或其可溶性前体的混合物，将该混合物沉积在基底上 并且在有效产生包含聚合物基质，半导体纳米颗粒和具有至少0.1cm 2 / Vs的场效应迁移率的半导体分子的纳米复合器件的条件下处理该混合物。 还公开了包括纳米复合器件的薄膜器件。