摘要:
A clock signal delay circuit includes a variable delay unit, a delay unit, a phase detection block, a control clock output block, and a delay control unit. The variable delay unit controls a delay amount of a reference clock signal based on a delay control signal and provides a delayed clock signal based thereon. The delay unit delays the delayed clock signal and provides a feedback clock signal based thereon. The phase detection block detects a phase difference between the feedback clock signal and the reference clock signal and provides a detected phase difference based thereon. The control clock output block provides a control clock signal based on the detected phase difference. The delay control unit generates the delay control signal based on the detected phase difference and in response to the control clock signal.
摘要:
A duty cycle correction circuit includes a duty correction block configured to generate a first pre-corrected signal and a second pre-corrected signal in response to a duty code and an input signal; a duty-corrected signal generation block configured to generate a duty-corrected signal in response to a first select signal, a second select signal, the first pre-corrected signal and the second pre-corrected signal; and a control block configured to generate the duty code, the first select signal and the second select signal in response to the duty-corrected signal and the input signal.
摘要:
A semiconductor device includes an on-die termination circuit, a clock input unit, a clock phase mixing unit, and a data input/output unit. The on-die termination circuit is configured to calibrate a resistance of a termination pad and output an impedance matching code. The clock input unit is configured to receive a data clock. The clock phase mixing unit is configured to receive the data clock through the clock input unit and a delayed data clock, which is generated by delaying the data clock by a predetermined time, mix a phase of the data clock and a phase of the delayed data clock at a ratio corresponding to the impedance matching code, and output a phase-mixed data clock. The data input/output unit is configured to input/output a data signal in response to the phase-mixed data clock.
摘要:
A DLL circuit includes a clock selection control unit configured to generate a clock selection signal on the basis of a phase difference between a reference clock and a feedback clock and, after the clock selection signal is generated, to generate an initialization signal. A delay control unit, when the initialization signal is enabled, transfers an initial voltage to be generated by dividing an external power supply voltage to a delay unit as a control voltage, and controls a delay operation of a delay reference clock to be selected on the basis of the clock selection signal.
摘要:
The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.
摘要:
A data output circuit in a semiconductor memory apparatus includes a first data driving unit configured to generate a first driving data at a first timing, a first buffering unit configured to generate a first output data by buffering the first driving data, a second data driving unit configured to generate a second driving data at a second timing that is different from the first timing, and a second buffering unit configured to generate a second output data by buffering the second driving data.
摘要:
The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.
摘要:
A delay locked loop (DLL) circuit is disclosed. The DLL circuit includes a first delay locked loop (DLL) configured to receive a plurality of first clock signals, delay each of the first clock signals by a predetermined period of time in response to a first control signal, and generate a plurality of first internal clock signals and a second delay locked loop (DLL) configured to receive the first internal clock signals, delay the first internal clock signals by a predetermined period of time in response to a second control signal, and generate a plurality of second internal clock signals.
摘要:
A DLL circuit includes a clock selection control unit configured to generate a clock selection signal on the basis of a phase difference between a reference clock and a feedback clock and, after the clock selection signal is generated, to generate an initialization signal. A delay control unit, when the initialization signal is enabled, transfers an initial voltage to be generated by dividing an external power supply voltage to a delay unit as a control voltage, and controls a delay operation of a delay reference clock to be selected on the basis of the clock selection signal.