摘要:
A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
摘要:
A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
摘要:
A starter including a one-way clutch threadably connected to an output shaft of an electric motor and having an inner member, and a hollow pinion shaft having a pinion secured thereto and loosely fitted at its forward end portion in the inner member of the one-way clutch in such a manner that there is a slight clearance between the inner periphery of the inner member and the outer periphery of the hollow pinion shaft in connecting the inner member to the hollow pinion shaft. By this arrangement, the reaction produced by the pinion when the starter is actuated to start an engine is prevented from being directly transmitted to the inner member of the clutch to thereby inhibit an eccentric motion of the inner member of the clutch.
摘要:
A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.
摘要:
A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.
摘要:
An inertia starter for an internal combustion engine comprises a driving shaft driven by a DC motor and provided with a one-way clutch which includes an axially movable driving member rotating and axially moving as the driving shaft is rotated and a driven member driven by the driving member to be axially displaced together with the driving member, a pinion secured to the driven member, an engine ring gear adapted to removably engage with the pinion, a return spring for returning the one-way clutch together with the pinion to the original position, a rotatable holder plate provided on the one-way clutch, and an electromagnet mounted on a stationary portion in opposition to the holder plate with a predetermined distance therefrom. The electromagnet has a coil connected in parallel with the field winding of the DC motor or with a part of the armature winding thereof.
摘要:
A starter apparatus comprises a D.C. motor, a solenoid actuator, a hollow sleeve having at one end thereof a pinion and a one way clutch. A torque of an armature of the D.C. motor is transmitted through the one way clutch to the hollow sleeve and further transmitted to a ring gear of an engine, which is engaged with a pinion of the hollow sleeve, thereby performing a start up of the engine. The engagement or disengagement between the pinion and the ring gear is carried out by means that the solenoid actuator reciprocates only the hollow sleeve through a shift lever.