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    CONTINUOUS DRAWING METHOD
    1.
    发明申请
    CONTINUOUS DRAWING METHOD 审中-公开

    公开(公告)号：US20200254810A1

    公开(公告)日：2020-08-13

    申请号：US16270324

    申请日：2019-02-07

    申请人： Kim Johnson ,  Jonathan Applegate

    发明人： Kim Johnson ,  Jonathan Applegate

    IPC分类号： B44D2/00 ,  B44F3/00

    摘要： A method of continuously drawing a series of alpha-numerical characters, an image, or a design or scene on a surface with a drawing instrument in which no line intersects any other line and no portion of characters is retraced. Images and designs can also be incorporated with continuous alpha-numerical characters. Also disclosed is a method of drawing an image on a surface that simulates a three-dimensional object or scene. Products can be created using any of the above-described techniques. Such products can include, but not be limited to greeting cards, postcards, apparel, coffee mugs, toys, games, puzzles, and the like. The surface on which the image is drawn can be made of material suitable for three-dimensional reliefs, so that visually impaired individuals can appreciate the work.

    Chemically-sensitive array with active and reference sensors
    2.
    发明授权
    Chemically-sensitive array with active and reference sensors 有权
    具有主动和参考传感器的化学敏感阵列

    公开(公告)号：US08519448B2

    公开(公告)日：2013-08-27

    申请号：US13556021

    申请日：2012-07-23

    申请人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    发明人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    IPC分类号： G01N27/403

    CPC分类号： G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

    摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

    摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。

    METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS
    4.
    发明申请
    METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS 有权
    使用大规模FET阵列测量分析仪的方法和装置

    公开(公告)号：US20120247977A1

    公开(公告)日：2012-10-04

    申请号：US13193128

    申请日：2011-07-28

    申请人： Jonathan ROTHBERG ,  Wolfgang HINZ ,  Kim JOHNSON ,  James BUSTILLO ,  John LEAMON ,  Jonathan SCHULTZ

    发明人： Jonathan ROTHBERG ,  Wolfgang HINZ ,  Kim JOHNSON ,  James BUSTILLO ,  John LEAMON ,  Jonathan SCHULTZ

    IPC分类号： G01N27/414 ,  G01N33/50

    CPC分类号： C12Q1/6874 ,  B01L3/502761 ,  B01L2300/046 ,  B01L2300/0663 ,  B01L2300/0851 ,  B01L2400/086 ,  C12Q1/6869 ,  G01N27/4145 ,  G01N27/4148 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2565/629

    摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in the concentration of inorganic pyrophosphate (PPi), hydrogen ions, and nucleotide triphosphates.

    摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个示例中，chemFET阵列基于监测无机焦磷酸盐（PPi），氢离子和核苷酸三磷酸盐的浓度变化来促进DNA测序技术。

    CMOS imager with wide dynamic range Pixel
    5.
    发明申请
    CMOS imager with wide dynamic range Pixel 有权
    CMOS成像器具有宽动态范围像素

    公开(公告)号：US20070023786A1

    公开(公告)日：2007-02-01

    申请号：US11311211

    申请日：2005-12-19

    申请人： Kim Johnson ,  Eugene Atlas ,  Sarit Neter

    发明人： Kim Johnson ,  Eugene Atlas ,  Sarit Neter

    IPC分类号： H01L29/768

    CPC分类号： H01L27/14609 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452

    摘要： In one aspect of the present invention, a light sensor is provided in the active pixel sensor cell for sensing incident radiation. The voltage corresponding to the photon-generated or other radiation-generated charge in the active pixel sensor cell is stored on a storage node via a sample-and-hold capacitor. Additional elements, such as source-follower transistors, may reside between the sensing element and the sample-and-hold capacitor. The signal is read via a readout source-follower (RSF) transistor. The readout source-follower drain is connected to the row select switch while its drain is connected to the output node on the column output bus. This configuration couples the storage node to the gate-source capacitance of the readout source-follower transistor. This allows the voltage on the storage node to increase proportionally to the increase in voltage on the readout node when the row select is closed and thus enables the drain current to flow through the RSF to the column output bus.

    摘要翻译： 在本发明的一个方面，光传感器设置在有源像素传感器单元中，用于感测入射辐射。 对应于有源像素传感器单元中的光子产生或其他辐射产生电荷的电压通过采样和保持电容器存储在存储节点上。 诸如源极 - 跟随器晶体管的附加元件可以位于感测元件和采样保持电容器之间。 信号通过读取源极跟随器（RSF）晶体管读取。 读取源极跟随器漏极连接到行选择开关，而其漏极连接到列输出总线上的输出节点。 该配置将存储节点耦合到读出源跟随器晶体管的栅极 - 源极电容。 这允许存储节点上的电压与行选择关闭时读出节点上的电压增加成比例地增加，并且因此使漏极电流能够通过RSF流到列输出总线。

    Array configuration and readout scheme
    6.
    发明授权
    Array configuration and readout scheme 有权
    阵列配置和读出方案

    公开(公告)号：US08731847B2

    公开(公告)日：2014-05-20

    申请号：US13174514

    申请日：2011-06-30

    申请人： Kim Johnson ,  Jeremy Jordan ,  Peter Levine ,  Mark Milgrew

    发明人： Kim Johnson ,  Jeremy Jordan ,  Peter Levine ,  Mark Milgrew

    IPC分类号： G06F19/00 ,  G01N27/414

    CPC分类号： G01N27/4148 ,  C12Q1/6869 ,  G01J1/46 ,  G01N27/4143 ,  G01N27/4145 ,  G01N33/00 ,  G01R29/26 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/66 ,  H01L2924/0002 ,  H04N5/374 ,  Y10T436/25875 ,  H01L2924/00

    摘要： The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.

    摘要翻译： 所描述的实施例可以提供化学检测电路，其可以包括在第一侧的多个第一输出电路和在化学检测电路的第二侧的多个第二输出电路。 化学检测电路还可以包括多个像素瓦片，每个瓷砖分别放置在相应的第一和第二输出电路对之间。 每个瓦片可以包括四个像素象限。 每个象限可以具有与第二列交错的指定的第一列的列。 每个第一列可以耦合到第一和第二象限中的相应的第一输出电路，以及耦合到第三和第四象限中的相应的第二输出电路。 每个第二列可以耦合到第一和第二象限中的相应的第二输出电路，以及耦合到第三和第四象限中的相应的第一输出电路。

    Chemically sensitive sensors with sample and hold capacitors
    8.
    发明授权
    Chemically sensitive sensors with sample and hold capacitors 有权
    具有采样和保持电容器的化学敏感传感器

    公开(公告)号：US08492800B2

    公开(公告)日：2013-07-23

    申请号：US13554585

    申请日：2012-07-20

    申请人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    发明人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    IPC分类号： G01N27/403

    CPC分类号： G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

    摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

    摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。

    Low noise chemically-sensitive field effect transistors
    10.
    发明授权
    Low noise chemically-sensitive field effect transistors 有权
    低噪声化学敏感场效应晶体管

    公开(公告)号：US08445945B2

    公开(公告)日：2013-05-21

    申请号：US13554842

    申请日：2012-07-20

    申请人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    发明人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    IPC分类号： G01N27/403

    CPC分类号： G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

    摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

    摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。