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    Power Amplifier and Linearization Techniques Using Active and Passive Devices
    1.
    发明申请
    Power Amplifier and Linearization Techniques Using Active and Passive Devices 有权
    使用主动和被动设备的功率放大器和线性化技术

    公开(公告)号：US20130335147A1

    公开(公告)日：2013-12-19

    申请号：US13880550

    申请日：2011-10-20

    申请人： Kai Xue Ma ,  Jiangmin Gu ,  Yang Lu ,  Kiat Seng Yeo

    发明人： Kai Xue Ma ,  Jiangmin Gu ,  Yang Lu ,  Kiat Seng Yeo

    IPC分类号： H03F3/21

    CPC分类号： H03F3/21 ,  H03F1/0261 ,  H03F1/32 ,  H03F1/3211 ,  H03F1/56 ,  H03F3/191 ,  H03F3/195 ,  H03F3/245 ,  H03F3/60 ,  H03F2200/18 ,  H03F2200/222 ,  H03F2200/387

    摘要： Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class- AB, B, C, D, E and F in the different application scenarios.

    摘要翻译： 公开了通过专门设计的有源晶体管或无源器件或两者在微波和毫米波频率使用方法中操作的功率放大器，特别是非线性型功率放大器的线性度的设计和技术。 这些技术使用晶体管的截止频率（fT）设计，附加的负载线性化短截线和微波信号的空间衰减特性单独或组合的操作。 所公开的技术提供了在各种功率放大器类型（例如不同应用场合中的类AB，B，C，D，E和F）中的线性度，增益和功率消耗之间的性能损害的优点。

    Transformer with effective high turn ratio
    2.
    发明授权
    Transformer with effective high turn ratio 有权
    变压器有效高匝数比

    公开(公告)号：US08242872B2

    公开(公告)日：2012-08-14

    申请号：US11779892

    申请日：2007-07-19

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00 ,  H01F27/28

    CPC分类号： H01F27/2804 ,  H01F17/0013 ,  H01F27/006 ,  H01F2017/0073 ,  H01L2924/3011 ,  Y10T29/4902

    摘要： Embodiments of the invention provide a transformer comprising: a first coil element having a transverse axis along a transverse direction, the first coil element having p turns where p is greater than or equal to 1; and a second coil element having a transverse axis generally parallel to the transverse axis of the first coil element, the second coil element having n turns, where n is greater than or equal to 5p; wherein the first and second coil elements are arranged to provide electromagnetic coupling between the coil elements along a portion of a length of the second coil element in both a transverse direction parallel to the transverse axes and a lateral direction, wherein the lateral direction is a direction normal to the transverse axes.

    摘要翻译： 本发明的实施例提供了一种变压器，包括：第一线圈元件，其沿着横向具有横向轴线，所述第一线圈元件具有p匝，其中p大于或等于1; 以及第二线圈元件，其具有大致平行于所述第一线圈元件的横向轴线的横轴，所述第二线圈元件具有n匝，其中n大于或等于5p; 其中所述第一和第二线圈元件布置成沿平行于横向轴线的横向方向和横向方向沿着所述第二线圈元件的长度的一部分在所述线圈元件之间提供电磁耦合，其中所述横向方向是 垂直于横轴。

    INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF
    4.
    发明申请
    INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF 有权
    一体化变压器及其制造方法

    公开(公告)号：US20080284552A1

    公开(公告)日：2008-11-20

    申请号：US11750341

    申请日：2007-05-18

    申请人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    发明人： Chee Chong Lim ,  Kok Wai Chew ,  Kiat Seng Yeo ,  Suh Fei Lim ,  Manh Anh Do ,  Lap Chan

    IPC分类号： H01F5/00

    CPC分类号： H01F17/0006 ,  H01F17/0013 ,  H01F19/08 ,  H01F27/2804 ,  H01F41/041 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10T29/4902 ,  H01L2924/00

    摘要： An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element includes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90° in a lateral direction.

    摘要翻译： 集成变压器结构包括与横向轴线相关联的第一线圈元件，第一线圈元件具有至少一匝。 第一线圈元件包括设置在第一横向水平面上的第一部分和设置在第二横向水平面上的第二部分。 第一和第二横向水平面沿着所述横向轴线相互间隔开。 第一和第二部分从所述轴线横向移位不同的相应距离。 所述第一线圈元件的至少一个交叉部分，其中所述第一线圈元件被配置为提供通过所述交叉部分穿过所述交叉部分的所述第一线圈元件的所述第一部分的至少一部分的导电路径，并且随后通过 第一线圈元件的第二部分的至少一部分，其中沿着所述路径的流动方向的任何变化在横向方向上小于90°。

    Integrated helix coil inductor on silicon
    5.
    发明授权
    Integrated helix coil inductor on silicon 有权
    在硅上集成螺旋线圈电感

    公开(公告)号：US06803848B2

    公开(公告)日：2004-10-12

    申请号：US10271006

    申请日：2002-10-15

    申请人： Kiat Seng Yeo ,  Hai Peng Tan ,  Jian Guo Ma ,  Manh Anh Do ,  Kok Wai Johnny Chew

    发明人： Kiat Seng Yeo ,  Hai Peng Tan ,  Jian Guo Ma ,  Manh Anh Do ,  Kok Wai Johnny Chew

    IPC分类号： H01F500

    CPC分类号： H01L28/10 ,  H01L27/08

    摘要： A new structure and method is provided for the creation of an inductor on the surface of a silicon semiconductor substrate. The inductor is of a helix coil design having upper level and lower level conductors further having an axis whereby the axis of the helix coil of the inductor is parallel to the plane of the underlying substrate. Under the first embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is uniform. Under the second embodiment of the invention the height of the helix coil of the inductor of the invention is uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil. Under the third embodiment of the invention, the height of the helix coil that is created on the surface of a silicon substrate is non-uniform. Under the fourth embodiment of the invention the height of the helix coil of the inductor of the invention is non-uniform while a ferromagnetic core is inserted between the upper and the lower level conductors of the helix coil.

    摘要翻译： 提供了一种新的结构和方法，用于在硅半导体衬底的表面上形成电感器。 电感器具有螺旋线圈设计，其具有上层和下层导体，其还具有轴线，由此电感器的螺旋线圈的轴线平行于下层衬底的平面。 在本发明的第一实施例中，在硅衬底的表面上产生的螺旋线圈的高度是均匀的。 在本发明的第二实施例中，本发明的电感器的螺旋线圈的高度是均匀的，而铁磁芯插入在螺旋线圈的上层和下层导体之间。 在本发明的第三实施例中，在硅衬底的表面上产生的螺旋线圈的高度是不均匀的。 在本发明的第四实施例中，本发明的电感器的螺旋线圈的高度是不均匀的，而铁磁芯被插入螺旋线圈的上层和下层导体之间。

    Parallel spiral stacked inductor on semiconductor material
    6.
    发明授权
    Parallel spiral stacked inductor on semiconductor material 有权
    半导体材料上的平行螺旋堆叠电感

    公开(公告)号：US06650220B2

    公开(公告)日：2003-11-18

    申请号：US10131334

    申请日：2002-04-23

    申请人： Choon-Beng Sia ,  Kiat Seng Yeo ,  Toe Naing Swe ,  Cheng Yeow Ng ,  Alex See

    发明人： Choon-Beng Sia ,  Kiat Seng Yeo ,  Toe Naing Swe ,  Cheng Yeow Ng ,  Alex See

    IPC分类号： H01F500

    CPC分类号： H01L28/10 ,  H01F17/0013 ,  H01L23/5227 ,  H01L27/08 ,  H01L2924/0002 ,  Y10T29/4902 ,  H01L2924/00

    摘要： A parallel spiral stacked inductor and manufacturing method therefore is provided. A substrate has a plurality of turns in a plurality of levels, the plurality of turns having a center proximate and a center distal ends. A first plurality of vias connecting the center proximate ends of the plurality of turns and a second plurality of vias connecting the center distal ends of the plurality of turns. A first connecting portion connects to the center proximate ends of the plurality of turns and a second connecting portion connecting to the center distal end of the plurality of turns. A dielectric material contains the inductor.

    摘要翻译： 因此，提供了一种并联螺旋堆叠电感器及其制造方法。 衬底具有多个级的多个匝，多个匝具有中心邻近和中心远端。 连接多个匝的中心近端的第一多个通孔和连接多个匝的中心远端的第二多个通孔。 第一连接部分连接到多个匝的中心近端，以及连接到多个匝的中心远端的第二连接部分。 电介质材料包含电感器。

    Front-End Transceiver
    8.
    发明申请
    Front-End Transceiver 有权
    前端收发器

    公开(公告)号：US20120274367A1

    公开(公告)日：2012-11-01

    申请号：US13391893

    申请日：2010-08-24

    申请人： Kiat Seng Yeo ,  Jian Guo Ma

    发明人： Kiat Seng Yeo ,  Jian Guo Ma

    IPC分类号： H03B19/00

    CPC分类号： H04B1/28 ,  H03D7/163 ,  H03D7/166 ,  H04B15/04 ,  H04B2215/064

    摘要： In an embodiment, a front-end transceiver may be provided. The front-end transceiver may include a receiver path, including a first receiver frequency converter configured to convert a received signal with a receiver frequency into a first receiver intermediate signal with a first receiver intermediate frequency; and a receiver direct conversion stage coupled to the first receiver frequency converter so as to receive the first receiver intermediate signal. The front-end transceiver may further include an oscillator signal generator respectively coupled to the first receiver frequency converter and to the receiver direct conversion stage so as to provide a first oscillator signal with a first oscillator frequency to the first receiver frequency converter and a first stabilizing signal with a first stabilizing frequency to the receiver direct conversion stage; wherein the oscillator signal generator may be configured so that the first oscillator frequency of the first oscillator signal may be selected such that any integer multiple of the first oscillator frequency of the first oscillator signal may be different from any integer multiple of the receiver frequency of the received signal. The front-end transceiver may also include a transmitter path.

    摘要翻译： 在一个实施例中，可以提供前端收发器。 前端收发器可以包括接收器路径，包括被配置为将具有接收机频率的接收信号转换为具有第一接收机中频的第一接收机中间信号的第一接收机频率转换器; 以及接收器直接转换级，其耦合到所述第一接收机频率转换器，以便接收所述第一接收机中间信号。 前端收发器还可以包括分别耦合到第一接收机频率转换器和接收机直接转换级的振荡器信号发生器，以便向第一接收机频率转换器提供具有第一振荡器频率的第一振荡器信号和第一稳定 信号具有第一稳定频率到接收机直接转换级; 其中振荡器信号发生器可以被配置为使得可以选择第一振荡器信号的第一振荡器频率，使得第一振荡器信号的第一振荡器频率的任何整数倍可以不同于第一振荡器信号的接收机频率的任何整数倍 接收信号。 前端收发器还可以包括发射机路径。