公开(公告)号：US08986448B2

公开(公告)日：2015-03-24

申请号：US13638070

申请日：2011-03-14

Applicant: Hidetoshi Asamura ,  Keisuke Kawamura ,  Satoshi Obara

Inventor： Hidetoshi Asamura ,  Keisuke Kawamura ,  Satoshi Obara

IPC: C30B29/36 ,  H01L21/02 ,  C30B25/02

CPC classification number: H01L21/0262 ,  C30B25/02 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02447 ,  H01L21/02494 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/02661 ,  Y10T428/24355

Abstract: To provide a method of manufacturing a single crystal 3C-SiC substrate that can dramatically reduce surface defects generated in a processing of epitaxial growth and can secure a quality as a semiconductor device while simplifying a post process. The method of manufacturing a single crystal 3C-SiC substrate where a single crystal 3C-SiC layer is formed on a base substrate by epitaxial growth is provided. A first growing stage of forming the single crystal 3C-SiC layer to have a surface state configured with a surface with high flatness and surface pits scattering in the surface is performed. A second growing stage of further epitaxially growing the single crystal 3C-SiC layer obtained in the first growing stage so as to fill the surface pits is performed.

Abstract translation: 提供一种制造可以显着减少在外延生长处理中产生的表面缺陷的单晶3C-SiC衬底的方法，并且可以确保作为半导体器件的质量，同时简化后处理。 提供了通过外延生长在基底基板上形成单晶3C-SiC层的单晶3C-SiC基板的制造方法。 进行形成单晶3C-SiC层的表面状态的第一生长阶段，该表面状态被构造成具有高平坦度的表面和表面上的表面凹坑散射。 进行进一步外延生长在第一生长阶段中获得的单晶3C-SiC层以填充表面凹坑的第二生长阶段。

公开(公告)号：US07319295B2

公开(公告)日：2008-01-15

申请号：US10506544

申请日：2003-03-13

Applicant: Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

Inventor： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC: H01J7/24

CPC classification number: H01J37/32577 ,  H01J37/32082

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

Abstract translation: 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US07167358B2

公开(公告)日：2007-01-23

申请号：US10751431

申请日：2004-01-06

Applicant: Yuuki Iwasaki ,  Akira Sato ,  Masayasu Watanabe ,  Keisuke Kawamura

Inventor： Yuuki Iwasaki ,  Akira Sato ,  Masayasu Watanabe ,  Keisuke Kawamura

IPC: G06F1/16

CPC classification number: G06F1/1698 ,  G06F1/1601 ,  G06F1/1626 ,  G06F1/1635 ,  G06F1/166 ,  H01M2/1055 ,  Y10S248/917

Abstract: In an information terminal apparatus 1 having a thin housing structure including at least a display (not shown), the information terminal apparatus being driven by batteries 102, a battery pack 10 to accommodate therein the batteries 102 includes a rotary support mechanism for rotating the battery pack 10 about the intermediate portion of the rear wall side 1d of this display so that the battery pack becomes freely openable and closable from the lower portion of the rear wall side 1d of this display, wherein the rotated battery pack 10 is used as a stand to enable this display to rise to the erect position and the battery pack 10 is directly exposed to the air.

Abstract translation: 在具有至少包括显示器（未示出）的薄壳体结构的信息终端设备1中，信息终端设备由电池102驱动，用于在其中容纳电池102的电池组10包括用于使电池旋转的旋转支撑机构 围绕该显示器的后壁1d的中间部分包装10，使得电池组从该显示器的后壁1d的下部自由开启和关闭，其中旋转的电池组10用作 支架能够使该显示器升至直立位置，电池组10直接暴露在空气中。

公开(公告)号：US20050127844A1

公开(公告)日：2005-06-16

申请号：US10506544

申请日：2003-03-13

Applicant: Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

Inventor： Hiroshi Mashima ,  Keisuke Kawamura ,  Akemi Takano ,  Yoshiaki Takeuchi ,  Tetsuro Shigemizu ,  Tatsufumi Aoi

IPC: C23C16/509 ,  H01J37/32 ,  H01L21/205 ,  H01J7/24

CPC classification number: H01J37/32577 ,  H01J37/32082

Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

Abstract translation: 提供射频电源结构和包括该射频电源结构的等离子体CVD装置，其中RF电缆连接到电极的连接部分处的射频功率的反射减小，使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中，射频电源结构从RF电缆向射频电源供给射频电力，RF电缆为 位于由电极形成的平面的延伸平面上，以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此，连接部的阻抗变化减小，连接部处的射频功率的反射减小，电极的射频功率的增加，成膜和表面处理的效率提高。

公开(公告)号：US06767801B2

公开(公告)日：2004-07-27

申请号：US10221077

申请日：2002-09-09

Applicant: Keisuke Kawamura ,  Atsuki Matsumura ,  Toshiyuki Mizutani

Inventor： Keisuke Kawamura ,  Atsuki Matsumura ,  Toshiyuki Mizutani

IPC: H01L2176

CPC classification number: H01L21/26533 ,  H01L21/324 ,  H01L21/76227 ,  H01L21/76243

Abstract: A SIMOX substrate having a buried oxide layer and a surface single crystal silicon layer formed therein is produced by a method which comprises implanting oxygen ions into a silicon single crystal substrate and subsequently performing a heat treatment at an elevated temperature on the substrate. The method is characterized by performing the former stage of the heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of single crystal silicon in an atmosphere obtained by adding oxygen under a partial pressure of not more than 1% to an inert gas and subsequently performing at least part of the latter stage of the heat treatment by increasing the partial pressure of oxygen within a range in which no internal oxidation is suffered to occur in the buried oxide layer. It can also be prepared by performing the former stage of the high temperature heat treatment at a temperature of not lower than 1150° C. and lower than the melting point of silicon under in inert gas atmosphere containing not more than 1 vol.% of oxygen and performing ITOX treatment of the buried oxide layer at a temperature of not more than 1300° C.

Abstract translation: 通过包括将氧离子注入到硅单晶衬底中并随后在衬底上在升高的温度下进行热处理的方法来制造具有掩埋氧化物层和形成在其中的表面单晶硅层的SIMOX衬底。 该方法的特征在于，在不低于1150℃的温度下进行前期的热处理，并且在通过在不大于1的分压下加入氧气获得的气氛中的单晶硅的熔点低 ％的惰性气体，然后通过在掩埋氧化物层内不发生内部氧化的范围内增加氧的分压来进行后段的热处理的至少一部分。 也可以通过在不低于1150℃的温度下进行高温热处理的前一阶段并且低于在不超过1体积％的氧的惰性气体气氛中的硅的熔点 并且在不高于1300℃的温度下进行掩埋氧化物层的ITOX处理。

公开(公告)号：US06617034B1

公开(公告)日：2003-09-09

申请号：US09601441

申请日：2000-08-01

Applicant: Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

Inventor： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

IPC: H01L21265

CPC classification number: H01L21/3226 ,  H01L21/26533 ,  H01L21/76243

Abstract: A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.

Abstract translation: 提供了一种高质量的SOI衬底，其允许以其提高的成品率在其上形成LSI并实现优异的电性能及其制造方法。 SOI衬底通过在硅单晶衬底上形成嵌入的氧化物层并形成用于在嵌入的氧化物层上形成器件的SOI层而获得，并且其特征在于包含不密集的凹坑状缺陷的SOI层 大于5cm-2或密度小于1件/ cm2的包含针孔缺陷的嵌入式氧化物层。

公开(公告)号：US06558637B2

公开(公告)日：2003-05-06

申请号：US09832813

申请日：2001-04-12

Applicant: Yasuki Tamura ,  Kazuo Koga ,  Kojiro Okada ,  Osamu Nakayama ,  Keisuke Kawamura ,  Kiyoshi Kawamura ,  Norihiro Hukuda

Inventor： Yasuki Tamura ,  Kazuo Koga ,  Kojiro Okada ,  Osamu Nakayama ,  Keisuke Kawamura ,  Kiyoshi Kawamura ,  Norihiro Hukuda

IPC: B01J1908

CPC classification number: B01D53/9454 ,  F01N3/0892 ,  F01N3/20 ,  F01N3/2013 ,  F01N3/28 ,  Y02T10/22 ,  Y02T10/26

Abstract: An exhaust emission purifier includes a catalyst unit disposed in an exhaust pipe of an engine. Electrodes (reaction adjustment unit) are provided on a honeycomb carrier of the catalyst unit in a layered form in order to apply an electric field to the vicinity of the catalyst surface to thereby adjust the catalytic reaction. An ECU serves as a status detection unit to detect factors which affect the exhaust gas purifying performance of the catalyst unit (i.e., operating conditions), and serves as a control unit which controls the electric field applied by the electrodes, on the basis of the detected operating conditions.

Abstract translation: 排气净化器包括设置在发动机的排气管内的催化剂单元。 在催化剂单元的蜂窝状载体上层叠形成电极（反应调整单元），以向催化剂表面附近施加电场，从而调节催化反应。 ECU用作状态检测单元，用于检测影响催化剂单元的排气净化性能的因素（即操作条件），并且作为控制单元，其控制由电极施加的电场，基于 检测到操作条件。

公开(公告)号：US06558636B2

公开(公告)日：2003-05-06

申请号：US09768258

申请日：2001-01-25

Applicant: Yasuki Tamura ,  Kojiro Okada ,  Kazuo Koga ,  Osamu Nakayama ,  Keisuke Kawamura ,  Kiyoshi Kawamura

Inventor： Yasuki Tamura ,  Kojiro Okada ,  Kazuo Koga ,  Osamu Nakayama ,  Keisuke Kawamura ,  Kiyoshi Kawamura

IPC: B01J1908

CPC classification number: B01D53/32 ,  F01N3/0892

Abstract: The present plasma type exhaust gas cleaning apparatus comprises a dielectric (5) arranged between a discharge electrode (7) and a ground electrode (8). The dielectric has a plurality of independent cavities (6) formed therein. The exhaust gas from combustion equipment (1) flows through the interiors of the plurality of independent cavities (6). Thus, in the plasma type exhaust gas cleaning apparatus, the discharge electrode (7) and the ground electrode (8) are securely partitioned by the cavities (6). When a voltage from a high voltage generator (9) is applied to between the discharge electrode (7) and the ground electrode (8), plasma resulting from corona discharges occurs in each individual cavity (6) without arising directly across the discharge electrode (7) and the ground electrode (8). The exhaust gas is thereby cleaned up.

Abstract translation: 本发明的等离子体废气净化装置包括布置在放电电极（7）和接地电极（8）之间的电介质（5）。 电介质具有形成在其中的多个独立空腔（6）。 来自燃烧设备（1）的废气流过多个独立空腔（6）的内部。 因此，在等离子体型排气净化装置中，放电电极（7）和接地电极（8）被空腔（6）牢固地隔开。 当来自高电压发生器（9）的电压被施加到放电电极（7）和接地电极（8）之间时，由电晕放电产生的等离子体发生在每个单个空腔（6）中，而不会直接穿过放电电极 7）和接地电极（8）。 从而净化废气。

公开(公告)号：US06274006B1

公开(公告)日：2001-08-14

申请号：US09369843

申请日：1999-08-09

Applicant: Keisuke Kawamura ,  Tetsuro Shigemizu ,  Hirohisa Yoshida ,  Masayoshi Murata

Inventor： Keisuke Kawamura ,  Tetsuro Shigemizu ,  Hirohisa Yoshida ,  Masayoshi Murata

IPC: B01J1908

CPC classification number: F01N3/0892 ,  B01D53/32 ,  B01D2259/818 ,  B01J19/088 ,  B01J2219/0807 ,  B01J2219/0875 ,  B01J2219/0894

Abstract: An apparatus and method for treating exhaust gases. A plurality of stages of reactor chambers are connected in series in the direction of an exhaust gas flow. High-voltage power supplies are connected to the reactor chambers In each of these reactor chambers, a streamer discharger plasma is generated. The more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is higher on the upstream side of the exhaust gas flow and the electron density is lower on the downstream side. A pulse generator is provided in which a high voltage, which is an output voltage of a D.C. charger (V0), is simultaneously applied to a plurality of distributed constant lines, which are connected in parallel with one another, by a signal shortcircuit switch (S1).

Abstract translation: 一种处理废气的设备和方法。 多个级的反应室在废气流的方向上串联连接。 高压电源连接到反应室在这些反应室的每一个中，产生流光放电器等离子体。 放置一个反应室的反应室下游越多，要投入反应器室的能量就越低。 在气体分解单元中产生的电子密度在废气流的上游侧较高，并且下游侧的电子密度较低。 提供了一种脉冲发生器，其中作为直流充电器（V0）的输出电压的高电压被同时施加到通过信号短路开关（彼此并联连接）的多个分布常数线路 S1）。

公开(公告)号：US20100310785A1

公开(公告)日：2010-12-09

申请号：US12864624

申请日：2008-06-27

Applicant: Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

Inventor： Eishiro Sasakawa ,  Masahiro Sakaki ,  Shigekazu Ueno ,  Keisuke Kawamura ,  Akemi Takano

IPC: C23C16/00 ,  B05C11/00 ,  B05D3/00

CPC classification number: C23C16/4401 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862

Abstract: It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

Abstract translation: 本发明的目的是提供一种真空处理装置，其能够简单地设定自清洁程序之间的定时间隔，从而具有通用性，能够显着延长该定时间隔，并提高生产效率。 在通过将清洁气体供给到在基板（4）上进行成膜处理的成膜室（1）中进行自清洁处理的等离子体CVD装置（100）中，自清洁 程序设定在相对于膜沉积处理量的增加而成膜沉积操作时间比（Ps）收敛的范围，其中成膜操作时间比（Ps）由膜沉积的比例 相关的操作时间（Tt）与膜沉积相关操作时间（Tt）和清洁相关操作时间（Tc）之和。