公开(公告)号：US06617034B1

公开(公告)日：2003-09-09

申请号：US09601441

申请日：2000-08-01

Applicant: Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

Inventor： Isao Hamaguchi ,  Atsushi Ikari ,  Atsuki Matsumura ,  Keisuke Kawamura ,  Takayuki Yano ,  Yoichi Nagatake

IPC: H01L21265

CPC classification number: H01L21/3226 ,  H01L21/26533 ,  H01L21/76243

Abstract: A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm−2 or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm2.

Abstract translation: 提供了一种高质量的SOI衬底，其允许以其提高的成品率在其上形成LSI并实现优异的电性能及其制造方法。 SOI衬底通过在硅单晶衬底上形成嵌入的氧化物层并形成用于在嵌入的氧化物层上形成器件的SOI层而获得，并且其特征在于包含不密集的凹坑状缺陷的SOI层 大于5cm-2或密度小于1件/ cm2的包含针孔缺陷的嵌入式氧化物层。

公开(公告)号：US07067402B2

公开(公告)日：2006-06-27

申请号：US10473692

申请日：2002-03-28

Applicant: Atsuki Matsumura ,  Keisuke Kawamura ,  Yoichi Nagatake ,  Seiji Takayama

Inventor： Atsuki Matsumura ,  Keisuke Kawamura ,  Yoichi Nagatake ,  Seiji Takayama

IPC: H01L21/762

CPC classification number: H01L21/76243

Abstract: A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied. The SIMOX substrate has a surface silicon layer 10 to 400 nm in thickness and a buried oxide layer 60 to 250 nm in thickness.

Abstract translation: 提供了通过植入氧（“SIMOX”）底物的分离及其制备方法。 可以通过在低剂量范围内使用氧离子注入量来制造SIMOX基板。 衬底是具有增加BOX层厚度的高质量SOI衬底。 更具体地，提供SIMOX基板及其制造方法，从而通过在硅基板中注入氧离子并在其后进行高温热处理来形成掩埋氧化物层和表面硅层。 通过在氧离子注入后施加高温热处理来提供掩埋氧化物层; 然后施加额外的氧离子注入，使得注入氧的分布的峰位置位于比已经形成的掩埋氧化物层和其下的衬底之间的界面低的部分。 然后，进行另一种高温热处理。 SIMOX基板具有厚度为10至400nm的表面硅层和厚度为60至250nm的掩埋氧化物层。