公开(公告)号：US08142259B2

公开(公告)日：2012-03-27

申请号：US12422674

申请日：2009-04-13

申请人： Kazuhisa Arai

发明人： Kazuhisa Arai

IPC分类号： B24B1/00 ,  B24B7/07

CPC分类号： B24B1/00 ,  B24B7/228 ,  B24B37/04

摘要： A grinding machine includes a holding table adapted to hold a workpiece, a grinding unit operative to grind the workpiece held on the holding piece, and a grinding unit transfer mechanism operative to shift the grinding unit in a direction coming close to or moving away from the workpiece. The grinding unit includes a porous pad having fine pores opposed to the workpiece, a gel-like slurry storing portion provided on the porous pad so as to store a gel-like slurry therein, and a water supply unit to supply water between the porous pad and the workpiece. The porous pad contains relatively larger superabrasives at least at an outer circumferential portion. The fine pores of the porous pad have a diameter greater than that of relatively small superabrasives contained in the gel-like slurry.

摘要翻译： 研磨机包括适于保持工件的保持台，可操作地研磨保持在保持件上的工件的研磨单元和用于使研磨单元沿接近或远离的方向移动的研磨单元传送机构 工件。 研磨单元包括具有与工件相对的细孔的多孔垫，设置在多孔垫上以便在其中储存凝胶状浆料的凝胶状浆料储存部分，以及在多孔垫之间供水的供水单元 和工件。 多孔垫至少在外周部分包含相对较大的超级磨料。 多孔垫的细孔的直径大于凝胶状浆料中所含的相对小的超级磨料的直径。

公开(公告)号：US07687375B2

公开(公告)日：2010-03-30

申请号：US12345222

申请日：2008-12-29

申请人： Kazuhisa Arai ,  Akihito Kawai

发明人： Kazuhisa Arai ,  Akihito Kawai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/044 ,  B23K26/0853 ,  B23K26/382 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/6836 ,  H01L24/33 ,  H01L24/94 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/14

摘要： A lamination device manufacturing method for manufacturing a lamination device using a reinforced wafer formed with an annular reinforced portion, includes a wafer lamination step in which a rear surface of the reinforced wafer corresponding to the device area is faced to and joined to the front surface of an underlying wafer with corresponding streets aligned with each other, thus forming a lamination wafer; an electrode connection step in which a via-hole is formed at a position where an electrode is formed in each of the devices of the reinforced wafer constituting part of the lamination wafer, so as to reach a corresponding electrode formed in each of the devices of the underlying wafer, and the via-hole is filled with a conductive material to connect the electrodes; and a division step in which after the electrode connection step is executed, the lamination wafer is cut along the streets and divided into individual lamination devices.

摘要翻译： 一种用于制造使用形成有环形增强部分的增强晶片的层压装置的层压装置制造方法，包括晶片层压步骤，其中与装置区域相对应的加强晶片的后表面面向并连接到 具有对应的街道的底层晶片彼此对准，从而形成层压晶片; 电极连接步骤，其中在构成部分叠层晶片的增强晶片的每个器件中形成电极的位置处形成通孔，以便到达形成在每个器件中的相应电极 底部晶片和通孔填充有导电材料以连接电极; 以及划分步骤，其中在执行电极连接步骤之后，沿着街道切割层压晶片，并将其分割成单独的层压装置。

公开(公告)号：US20090298264A1

公开(公告)日：2009-12-03

申请号：US12534406

申请日：2009-08-03

申请人： Kazuhisa Arai ,  Masaru Nakamura

发明人： Kazuhisa Arai ,  Masaru Nakamura

IPC分类号： H01L21/304

CPC分类号： H01L21/6835 ,  B23K26/40 ,  B23K26/50 ,  B23K26/53 ,  B23K2103/50 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512

摘要： On the back surface of the chip of which a front surface is formed with an electronic circuit, an adhesive film of a shape and dimensions corresponding to at least the back surface of the chip is adhered to obtain the semiconductor chip with the entire back surface covered with the adhesive film. Such a semiconductor chip is obtained by forming a division groove in the front surface of a semiconductor wafer to be divided into plural chips, grinding a back surface of the wafer until the division groove appears to divide the wafer into plural chips, adhering the adhesive film and a dicing tape on the entire back surface of the wafer, and stretching the dicing tape to cut the adhesive film along the division groove.

摘要翻译： 在其表面形成有电子电路的芯片的背面上，粘附至少​​与芯片的背面对应的形状和尺寸的粘合剂膜，以获得整个背面覆盖的半导体芯片 与粘合膜。 这样的半导体芯片通过在半导体晶片的前表面形成分割槽而形成分割槽，从而分割成多个芯片，研磨晶片的背面，直到划分凹槽出现将晶片分成多个芯片， 以及在晶片的整个后表面上的切割胶带，并且拉伸切割带以沿着分割槽切割粘合剂膜。

公开(公告)号：US07498239B2

公开(公告)日：2009-03-03

申请号：US11092756

申请日：2005-03-30

申请人： Kazuhisa Arai

发明人： Kazuhisa Arai

IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/02043 ,  B24B7/228 ,  B24B41/068 ,  H01L21/304 ,  H01L21/78

摘要： A wafer processing method is capable of easily handling even a thinly formed wafer during the processing thereof. An annular protective member is bonded to an outer circumferential excess region on an outer surface of the wafer, on which devices are not formed, and a rear surface is ground with the outer surface left in the mentioned condition. Since the outer circumference of the wafer is reinforced with the annular protective member, the handling of the wafer becomes easy even after the wafer becomes thinner due to a grinding operation.

摘要翻译： 晶片处理方法在其处理过程中能够容易地处理薄的晶片。 环状保护构件被结合到晶片的外表面上的外周多余区域上，在该外表面上未形成器件，并且在所述条件下，外表面被磨平。 由于晶片的外圆周被环形保护构件加固，所以即使在由于研磨操作使晶片变薄之后，晶片的处理变得容易。

公开(公告)号：US07183178B2

公开(公告)日：2007-02-27

申请号：US10986783

申请日：2004-11-15

申请人： Kazuhisa Arai

发明人： Kazuhisa Arai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/304 ,  H01L2221/6834

摘要： A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 μm or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.

摘要翻译： 一种制造半导体晶片的方法，其中在形成有前表面的电路的起始半导体晶片的背面上形成膜。 为了防止半导体晶片即使在非常薄的情况下作为100um或更低的工作，并且在半导体晶片的背面均匀地形成膜，该方法包括：支撑半导体晶片的前表面的统一步骤 在具有平坦的支撑表面的支撑基板上，然后使支撑基板和半导体晶片彼此均匀;磨削工作步骤，将半导体晶片的背面磨削成薄; 以及使用成膜装置在半导体晶片的背面形成膜的成膜工序; 其特征在于，在所述一体化步骤中，将能够被剥离的保护带粘贴到所述支撑基板的后表面上，以将所述保护带承载在所述支撑基板上进行后续的研磨加工步骤; 并且在进行所述成膜步骤之前，进行剥离除去保护胶带的保护带剥离除去步骤。

公开(公告)号：US20060288826A1

公开(公告)日：2006-12-28

申请号：US10529146

申请日：2003-08-20

申请人： Kazuhisa Arai ,  Hideyuki Sando

发明人： Kazuhisa Arai ,  Hideyuki Sando

IPC分类号： B23B3/00

CPC分类号： H01L23/49816 ,  H01L2224/16 ,  H01L2924/15311 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49204 ,  Y10T29/49222 ,  Y10T82/10

摘要： A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (1), are made their heads uniform in height by causing the terminals (4) to project from surface of a board (2) coated with a resist film, and applying a cutting tool (19) to the surface of the board (2) having the terminals project therefrom to carry out lathe turning for heads of the terminals (4), while having the terminal board held by a rotatable chuck table (17) and rotating the chuck table (17).

摘要翻译： 具有形成球形电极的多个端子的端子板可以有效且经济地制备，而不会在端子彼此非常接近地形成端子时在端子之间发生任何短路，如在插入件（1）上那样 它们的头部通过使端子（4）从涂覆有抗蚀剂膜的板（2）的表面突出而高度均匀，并将切割工具（19）施加到具有突出端子的板（2）的表面 在端子板通过可旋转卡盘台（17）保持并旋转卡盘台（17）的同时，对端子（4）的头部进行车床转动。

公开(公告)号：US20090181519A1

公开(公告)日：2009-07-16

申请号：US12345222

申请日：2008-12-29

申请人： Kazuhisa Arai ,  Akihito Kawai

发明人： Kazuhisa Arai ,  Akihito Kawai

IPC分类号： H01L21/30

CPC分类号： H01L21/78 ,  B23K26/032 ,  B23K26/044 ,  B23K26/0853 ,  B23K26/382 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/6836 ,  H01L24/33 ,  H01L24/94 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/14

摘要： A lamination device manufacturing method for manufacturing a lamination device using a reinforced wafer formed with an annular reinforced portion, includes a wafer lamination step in which a rear surface of the reinforced wafer corresponding to the device area is faced to and joined to the front surface of an underlying wafer with corresponding streets aligned with each other, thus forming a lamination wafer; an electrode connection step in which a via-hole is formed at a position where an electrode is formed in each of the devices of the reinforced wafer constituting part of the lamination wafer, so as to reach a corresponding electrode formed in each of the devices of the underlying wafer, and the via-hole is filled with a conductive material to connect the electrodes; and a division step in which after the electrode connection step is executed, the lamination wafer is cut along the streets and divided into individual lamination devices.

摘要翻译： 一种用于制造使用形成有环形增强部分的增强晶片的层压装置的层压装置制造方法，包括晶片层压步骤，其中与装置区域相对应的加强晶片的后表面面向并连接到 具有对应的街道的底层晶片彼此对准，从而形成层压晶片; 电极连接步骤，其中在构成部分叠层晶片的增强晶片的每个器件中形成电极的位置处形成通孔，以便到达形成在每个器件中的相应电极 底部晶片和通孔填充有导电材料以连接电极; 以及划分步骤，其中在执行电极连接步骤之后，沿着街道切割层压晶片，并将其分割成单独的层压装置。

公开(公告)号：US20050106840A1

公开(公告)日：2005-05-19

申请号：US10986783

申请日：2004-11-15

申请人： Kazuhisa Arai

发明人： Kazuhisa Arai

IPC分类号： H01L21/28 ,  C08J5/12 ,  H01L21/00 ,  H01L21/30 ,  H01L21/301 ,  H01L21/304 ,  H01L21/31 ,  H01L21/46 ,  H01L21/58 ,  H01L21/68 ,  H01L21/683

CPC分类号： H01L21/6835 ,  H01L21/304 ,  H01L2221/6834

摘要： A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof. To prevent the semiconductor wafer from warping even when it is worked as very thin as 100 μm or below and to form the film uniformly on the back surface of the semiconductor wafer, the method includes a unification step of supporting the front surface of the semiconductor wafer on a support baseplate having a flat support surface, and then unifying the support baseplate and the semiconductor wafer with each other, a grinding work step of grinding the back surface of the semiconductor wafer to thin; and a film formation step of forming a film on the back surface of the semiconductor wafer with use of a film formation apparatus; wherein a protective tape capable of being tom off is stuck onto a back surface of the support baseplate at said unification step, so as to perform the subsequent grinding work step with the protective tape borne on the support baseplate; and a protective-tape tearing off and removal step of tearing off and removing the protective tape is carried out before performing said film formation step.

摘要翻译： 一种制造半导体晶片的方法，其中在形成有前表面的电路的起始半导体晶片的背面上形成膜。 为了防止半导体晶片即使在非常薄的情况下作为100um或更低的工作，并且在半导体晶片的背面均匀地形成膜，该方法包括：支撑半导体晶片的前表面的统一步骤 在具有平坦的支撑表面的支撑基板上，然后使支撑基板和半导体晶片彼此均匀;磨削工作步骤，将半导体晶片的背面磨削成薄; 以及使用成膜装置在半导体晶片的背面形成膜的成膜工序; 其特征在于，在所述一体化步骤中，将能够被剥离的保护带粘贴到所述支撑基板的后表面上，以将所述保护带承载在所述支撑基板上进行后续的研磨加工步骤; 并且在进行所述成膜步骤之前，进行剥离除去保护胶带的保护带剥离除去步骤。

公开(公告)号：US06759274B2

公开(公告)日：2004-07-06

申请号：US09929103

申请日：2001-08-15

申请人： Kazuhisa Arai ,  Toshiaki Takahashi ,  Kouichi Yajima

发明人： Kazuhisa Arai ,  Toshiaki Takahashi ,  Kouichi Yajima

IPC分类号： H01L21304

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  Y10S414/141

摘要： A method of picking up a plurality of semiconductor chips formed by dividing a semiconductor wafer comprises the step of adhesively holding the plurality of semiconductor chips on an elastic adhesive pad which has innumerable pores in the surface and generates adhesion force when negative pressure is produced by the pores crushed by restoration force generated by elasticity and adhesion, and the step of picking up the semiconductor chips in a state of air in the pores being expanded by heating the elastic adhesive pad which adhesively holds the plurality of semiconductor chips at a predetermined temperature.

摘要翻译： 拾取通过划分半导体晶片形成的多个半导体芯片的方法包括将多个半导体芯片粘合地保持在表面上具有无数孔的弹性粘合垫上并产生粘合力的步骤，当由 通过由弹性和粘附力产生的恢复力而破碎的细孔，以及通过加热粘合地将多个半导体芯片保持在预定温度的弹性粘合剂垫，在孔中的空气中拾取半导体芯片的步骤被扩大。

公开(公告)号：US08673743B2

公开(公告)日：2014-03-18

申请号：US13598147

申请日：2012-08-29

申请人： Kazuhisa Arai

发明人： Kazuhisa Arai

IPC分类号： H01L21/78 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/683

CPC分类号： H01L21/3065 ,  B23K26/3568 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  H01L21/30608 ,  H01L21/78

摘要： A wafer is divided by setting the focal point of a laser beam inside the wafer at positions corresponding to division lines, thereby forming modified layers inside the wafer along the division lines. Each modified layer has a thickness ranging from the vicinity of the front side of the wafer to the vicinity of the back side of the wafer. An etching gas or an etching liquid is supplied to the wafer to erode the modified layers, thereby dividing the wafer into individual devices. The modified layers are not crushed, so fine particles are not generated in dividing the wafer. Accordingly, fine particles do not stick to the surface of each device and cause a reduction in quality. Further, since the modified layers are removed by etching, it is possible to prevent a reduction in die strength of each device due to the remainder of the modified layers.

摘要翻译： 通过将晶片内部的激光束的焦点设置在与划分线对应的位置处来分割晶片，从而沿着分割线在晶片内部形成修饰层。 每个改性层的厚度范围从晶片的正面附近到晶片的背面附近。 蚀刻气体或蚀刻液体被供应到晶片以侵蚀改性层，从而将晶片分成各个器件。 改性层不被粉碎，因此在分割晶片时不会产生细小的颗粒。 因此，细颗粒不粘附到每个装置的表面并导致质量降低。 此外，由于通过蚀刻去除了改性层，可以防止由于其余的改性层而导致的每个器件的管芯强度的降低。