知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

37 条记录 (耗时 0.03 秒)

    ANTI-CD4 ANTIBODY
    2.
    发明申请
    ANTI-CD4 ANTIBODY 有权
    抗CD4抗体

    公开(公告)号：US20130177944A1

    公开(公告)日：2013-07-11

    申请号：US13755472

    申请日：2013-01-31

    申请人： Tomoaki NAKAGAWA ,  Sayaka HORI ,  Rinpei NIWA ,  Tsuguo KUBOTA ,  Kazuhiro MASUDA ,  Kazuyasu NAKAMURA

    发明人： Tomoaki NAKAGAWA ,  Sayaka HORI ,  Rinpei NIWA ,  Tsuguo KUBOTA ,  Kazuhiro MASUDA ,  Kazuyasu NAKAMURA

    IPC分类号： C07K16/28

    CPC分类号： C07K16/2812 ,  A61K2039/505 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/72 ,  C07K2317/732 ,  C07K2317/734 ,  C07K2317/92 ,  C07K2319/30 ,  G01N2333/70514

    摘要： An anti-CD4 antibody which binds to CD4, has a high affinity and has a high effector activity, such as an antibody-dependent cellular cytotoxicity (ADCC activity) or complement-dependent cellular cytotoxicity (CDC activity), is required for a disease relating to a CD4-expressing cell.The present invention can provide a monoclonal antibody or an antibody fragment thereof, which binds to a CD4 extracellular region with high affinity and also exhibits a high ADCC activity or a high CDC activity; a hybridoma which produces the antibody; a DNA which encodes the antibody; a vector which contains the DNA; a transformant obtainable by introducing the vector; a process for producing an antibody or an antibody fragment thereof using the hybridoma or the transformant; and a therapeutic agent using the antibody or the antibody fragment thereof or a diagnostic agent using the antibody or the antibody fragment thereof.

    摘要翻译： 与CD4结合的抗CD4抗体具有高亲和力并具有高效应活性，例如抗体依赖性细胞毒性（ADCC活性）或补体依赖性细胞毒性（CDC活性），涉及到疾病 到CD4表达细胞。 本发明可以提供以高亲和力结合CD4细胞外区域并且也表现出高ADCC活性或高CDC活性的单克隆抗体或其抗体片段; 产生抗体的杂交瘤; 编码抗体的DNA; 含有DNA的载体; 通过引入载体可获得的转化体; 使用杂交瘤或转化体生产抗体或其抗体片段的方法; 以及使用该抗体或其抗体片段的治疗剂或使用该抗体或其抗体片段的诊断剂。

    Anti-CD4 antibody
    3.
    发明授权
    Anti-CD4 antibody 有权
    抗CD4抗体

    公开(公告)号：US08399621B2

    公开(公告)日：2013-03-19

    申请号：US12647698

    申请日：2009-12-28

    申请人： Tomoaki Nakagawa ,  Sayaka Hori ,  Rinpei Niwa ,  Tsuguo Kubota ,  Kazuhiro Masuda ,  Kazuyasu Nakamura

    发明人： Tomoaki Nakagawa ,  Sayaka Hori ,  Rinpei Niwa ,  Tsuguo Kubota ,  Kazuhiro Masuda ,  Kazuyasu Nakamura

    IPC分类号： C07K16/00

    CPC分类号： C07K16/2812 ,  A61K2039/505 ,  C07K2317/56 ,  C07K2317/565 ,  C07K2317/72 ,  C07K2317/732 ,  C07K2317/734 ,  C07K2317/92 ,  C07K2319/30 ,  G01N2333/70514

    摘要： An anti-CD4 antibody which binds to CD4, has a high affinity and has a high effector activity, such as an antibody-dependent cellular cytotoxicity (ADCC activity) or complement-dependent cellular cytotoxicity (CDC activity), is required for a disease relating to a CD4-expressing cell.The present invention can provide a monoclonal antibody or an antibody fragment thereof, which binds to a CD4 extracellular region with high affinity and also exhibits a high ADCC activity or a high CDC activity; a hybridoma which produces the antibody; a DNA which encodes the antibody; a vector which contains the DNA; a transformant obtainable by introducing the vector; a process for producing an antibody or an antibody fragment thereof using the hybridoma or the transformant; and a therapeutic agent using the antibody or the antibody fragment thereof or a diagnostic agent using the antibody or the antibody fragment thereof.

    摘要翻译： 与CD4结合的抗CD4抗体具有高亲和力并具有高效应活性，例如抗体依赖性细胞毒性（ADCC活性）或补体依赖性细胞毒性（CDC活性），涉及到疾病 到CD4表达细胞。 本发明可以提供以高亲和力结合CD4细胞外区域并且也表现出高ADCC活性或高CDC活性的单克隆抗体或其抗体片段; 产生抗体的杂交瘤; 编码抗体的DNA; 含有DNA的载体; 通过引入载体可获得的转化体; 使用杂交瘤或转化体生产抗体或其抗体片段的方法; 以及使用该抗体或其抗体片段的治疗剂或使用该抗体或其抗体片段的诊断剂。

    Ferroelectric memory and its manufacturing method
    6.
    发明申请
    Ferroelectric memory and its manufacturing method 审中-公开
    铁电记忆及其制造方法

    公开(公告)号：US20080020492A1

    公开(公告)日：2008-01-24

    申请号：US11893049

    申请日：2007-08-14

    申请人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinich Fukada

    发明人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinich Fukada

    IPC分类号： H01L21/20

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.

    摘要翻译： 铁电存储器包括基底构件，形成在基底构件上的第一电介质层，形成在第一电介质层上方的第二电介质层，穿透第一和第二电介质层的接触孔，形成在接触孔中的插塞，以及 形成在插塞上方的阻挡层，以及由下电极，强电介质层和上电极形成的强电介质电容器，其连续地层压在包括在插塞上方的区域中。 第二电介质层具有比插塞和第一电介质层更难以抛光的性质。

    Ferroelectric memory
    7.
    发明授权
    Ferroelectric memory 有权
    铁电存储器

    公开(公告)号：US07279342B2

    公开(公告)日：2007-10-09

    申请号：US11210010

    申请日：2005-08-23

    申请人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinichi Fukada

    发明人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinichi Fukada

    IPC分类号： H01L21/00

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.

    摘要翻译： 铁电存储器包括基底构件，形成在基底构件上的第一电介质层，形成在第一电介质层上方的第二电介质层，穿透第一和第二电介质层的接触孔，形成在接触孔中的插塞，以及 形成在插塞上方的阻挡层，以及由下电极，强电介质层和上电极形成的强电介质电容器，其连续地层压在包括在插塞上方的区域中。 第二电介质层具有比插塞和第一电介质层更难以抛光的性质。

    Protective layer transfer sheet and printed product
    9.
    发明授权
    Protective layer transfer sheet and printed product 有权
    保护层转印纸和印刷品

    公开(公告)号：US07026023B2

    公开(公告)日：2006-04-11

    申请号：US10946580

    申请日：2004-09-21

    申请人： Kazuhiro Masuda ,  Makoto Hashiba

    发明人： Kazuhiro Masuda ,  Makoto Hashiba

    IPC分类号： B41B5/40

    CPC分类号： B41M7/0027 ,  B32B7/06 ,  B32B27/20 ,  B32B27/36 ,  B41M2205/06 ,  G03G7/0006 ,  G03G7/0013 ,  G03G7/004 ,  Y10T428/24843 ,  Y10T428/24851 ,  Y10T428/25 ,  Y10T428/2817

    摘要： The present invention provides a protective layer transfer sheet, which has excellent folding resistance, plasticizer resistance, scratch resistance, transparency, layer transferability and other properties, and a print using the same. The protective layer transfer sheet comprises: a substrate sheet; and a thermally transferable resin layer provided separably on at least a part of one side of the substrate sheet. The thermally transferable resin layer comprises at least a thermally transferable protective layer and a heat-sensitive adhesive resin layer stacked in that order from the substrate sheet side. The thermally transferable protective layer comprises a layer comprising submicron particles of a layered inorganic material dispersed in a binder resin. The print is formed using the thermally transferable protective layer.

    摘要翻译： 本发明提供了具有优异的抗折叠性，耐增塑剂性，耐划伤性，透明性，层转移性等特性的保护层转印片，以及使用该保护层转印片的印刷品。 保护层转印片包括：基片; 以及可分离地设置在基板的一侧的至少一部分上的可热转印树脂层。 可热转印树脂层至少包含从基材片侧依次堆叠的热转印保护层和热敏粘合树脂层。 可热转印保护层包括分散在粘合剂树脂中的层状无机材料的亚微米颗粒的层。 使用可热转印保护层形成印刷品。

    Ferroelectric memory and its manufacturing method
    10.
    发明申请
    Ferroelectric memory and its manufacturing method 审中-公开
    铁电记忆及其制造方法

    公开(公告)号：US20060043452A1

    公开(公告)日：2006-03-02

    申请号：US11210011

    申请日：2005-08-23

    申请人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinichi Fukada

    发明人： Mamoru Ueda ,  Kazuhiro Masuda ,  Shinichi Fukada

    IPC分类号： H01L29/94

    CPC分类号： H01L28/55 ,  H01L28/65

    摘要： A ferroelectric memory includes a base member, a dielectric layer formed above the base member, a contact hole that penetrates the dielectric layer, a plug formed inside the contact hole, a barrier layer formed above the plug, and including a first portion with a portion formed in the contact hole and a second portion formed integrally with the first portion and above the dielectric layer, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug.

    摘要翻译： 铁电存储器包括基底构件，形成在基底构件上方的电介质层，穿透电介质层的接触孔，形成在接触孔内部的塞子，形成在插塞上方的阻挡层，并且包括第一部分， 形成在所述接触孔中的第二部分和与所述第一部分和所述介电层一体形成的第二部分，以及由下电极，强电介质层和上电极形成的强电介质电容器，所述铁电电容器依次层压在所述插塞之上的区域中。