Ferroelectric memory and its manufacturing method
    1.
    发明申请
    Ferroelectric memory and its manufacturing method 审中-公开
    铁电记忆及其制造方法

    公开(公告)号:US20080020492A1

    公开(公告)日:2008-01-24

    申请号:US11893049

    申请日:2007-08-14

    IPC分类号: H01L21/20

    CPC分类号: H01L27/11502 H01L27/11507

    摘要: A ferroelectric memory includes a base member, a first dielectric layer formed above the base member, a second dielectric layer formed above the first dielectric layer, a contact hole that penetrates the first and second dielectric layers, a plug formed in the contact hole, and a barrier layer formed above the plug, and a ferroelectric capacitor formed from a lower electrode, a ferroelectric layer and an upper electrode successively laminated in a region including above the plug. The second dielectric layer has a property that is more difficult to be polished than the plug and the first dielectric layer.

    摘要翻译: 铁电存储器包括基底构件,形成在基底构件上的第一电介质层,形成在第一电介质层上方的第二电介质层,穿透第一和第二电介质层的接触孔,形成在接触孔中的插塞,以及 形成在插塞上方的阻挡层,以及由下电极,强电介质层和上电极形成的强电介质电容器,其连续地层压在包括在插塞上方的区域中。 第二电介质层具有比插塞和第一电介质层更难以抛光的性质。

    Ferroelectric memory and its manufacturing method
    2.
    发明申请
    Ferroelectric memory and its manufacturing method 有权
    铁电记忆及其制造方法

    公开(公告)号:US20060043446A1

    公开(公告)日:2006-03-02

    申请号:US11200017

    申请日:2005-08-10

    申请人: Shinich Fukada

    发明人: Shinich Fukada

    IPC分类号: H01L29/94 H01L21/00

    CPC分类号: H01L27/11502 H01L27/11507

    摘要: To securely prevent hydrogen from entering a ferroelectric layer of a ferroelectric memory. A first hydrogen barrier layer 5 is formed on the lower side of ferroelectric capacitors 7. Upper surfaces and side surfaces of the ferroelectric capacitors 7 are covered by a second hydrogen barrier layer. All upper electrodes 7c of the plural ferroelectric capacitors 7 to be connected to a common plate line P are connected to one another by an upper wiring layer 91. The upper wiring layer 91 is connected to the plate line P through a lower wiring 32 provided below the ferroelectric capacitors 7. A third hydrogen barrier layer 92 is formed on the upper wiring layer 91 such that all edge sections 92a of the third hydrogen barrier layer 92 come in contact with the first hydrogen barrier layer 5.

    摘要翻译: 可靠地防止氢气进入铁电存储器的铁电层。 第一氢阻挡层5形成在铁电电容器7的下侧。 铁电电容器7的上表面和侧表面被第二氢阻挡层覆盖。 要连接到公共板线P的多个铁电电容器7的所有上电极7c通过上布线层91彼此连接。 上布线层91通过设置在铁电电容器7下方的下布线32与板线P连接。 第三氢阻挡层92形成在上布线层91上,使得第三氢阻挡层92的所有边缘部分92a与第一氢阻挡层5接触。