公开(公告)号：US20130060033A1

公开(公告)日：2013-03-07

申请号：US13599191

申请日：2012-08-30

申请人： Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroki SUZUKI ,  Kaori OGITA ,  Tomohiro KUBOTA ,  Miyako MORIKUBO ,  Yasushi KITANO

发明人： Satoshi SEO ,  Satoko SHITAGAKI ,  Hiroki SUZUKI ,  Kaori OGITA ,  Tomohiro KUBOTA ,  Miyako MORIKUBO ,  Yasushi KITANO

IPC分类号： C07D241/38

CPC分类号： C07D405/10 ,  C07D241/38 ,  C07D403/10 ,  C07D409/10 ,  C09B57/00 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5072

摘要： Provided is a novel heterocyclic compound which has excellent heat resistance and can be used as a host material for a light-emitting substance (a substance emitting fluorescence or a substance emitting phosphorescence). A light-emitting element includes a heterocyclic compound which includes one dibenzo[f,h]quinoxaline ring, one ring having a hole-transport skeleton, and two to eight benzene rings. Note that in the above structure, the molecular weight of the heterocyclic compound is greater than or equal to 564 and less than or equal to 1000.

摘要翻译： 提供了具有优异的耐热性并可用作发光物质（发射荧光的物质或发射磷光的物质）的主体材料的新型杂环化合物。 发光元件包括杂环化合物，其包括一个二苯并[f，h]喹喔啉环，一个环具有空穴传输骨架和二至八个苯环。 注意，在上述结构中，杂环化合物的分子量大于或等于564并且小于或等于1000。

公开(公告)号：US08039353B2

公开(公告)日：2011-10-18

申请号：US12854060

申请日：2010-08-10

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US20110101366A1

公开(公告)日：2011-05-05

申请号：US12985364

申请日：2011-01-06

申请人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kaori OGITA ,  Naoto KUSUMOTO

发明人： Yoshitaka DOZEN ,  Tomoyuki AOKI ,  Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kaori OGITA ,  Naoto KUSUMOTO

IPC分类号： H01L29/786

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

摘要翻译： 实现了能够无线地进行通信的半导体装置的纸，其中包含半导体装置的部分的不均匀性不突出，并且纸薄而厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US20100025831A1

公开(公告)日：2010-02-04

申请号：US12507254

申请日：2009-07-22

申请人： Shunpei YAMAZAKI ,  Miho KOMORI ,  Yurika SATOU ,  Kazue HOSOKI ,  Kaori OGITA

发明人： Shunpei YAMAZAKI ,  Miho KOMORI ,  Yurika SATOU ,  Kazue HOSOKI ,  Kaori OGITA

IPC分类号： H01L23/28

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  G06K19/0776 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/66757

摘要： To provide a thin film integrated circuit which is mass produced at low cost, a method for manufacturing a thin film integrated circuit according to the invention includes the steps of: forming a peel-off layer over a substrate; forming a base film over the peel-off layer; forming a plurality of thin film integrated circuits over the base film; forming a groove at the boundary between the plurality of thin film integrated circuits; and introducing a gas or a liquid containing halogen fluoride into the groove, thereby removing the peel-off layer; thus, the plurality of thin film integrated circuits are separated from each other.

摘要翻译： 为了提供以低成本批量生产的薄膜集成电路，根据本发明的薄膜集成电路的制造方法包括以下步骤：在衬底上形成剥离层; 在剥离层上形成基膜; 在所述基膜上形成多个薄膜集成电路; 在所述多个薄膜集成电路之间的边界处形成沟槽; 并将含有卤素氟化物的气体或液体引入槽中，从而除去剥离层; 因此，多个薄膜集成电路彼此分离。

公开(公告)号：US20080012126A1

公开(公告)日：2008-01-17

申请号：US11819157

申请日：2007-06-25

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L23/06 ,  D21F13/00

CPC分类号： D21H21/48 ,  B32B29/00 ,  D21H27/32 ,  G06K19/07749 ,  H01L23/49855 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： Paper embedded with a semiconductor device capable of communicating wirelessly is realized, whose unevenness of a portion including the semiconductor device does not stand out and the paper is thin with a thickness of less than or equal to 130 μm. A semiconductor device is provided with a circuit portion and an antenna, and the circuit portion includes a thin film transistor. The circuit portion and the antenna are separated from a substrate used during manufacturing, and are interposed between a flexible base and a sealing layer and protected. The semiconductor device can be bent, and the thickness of the semiconductor device itself is less than or equal to 30 μm. The semiconductor device is embedded in a paper in a papermaking process.

摘要翻译： 实现了能够无线通信的半导体器件的纸张，其中包括半导体器件的部分的不均匀性不突出，并且纸薄，厚度小于或等于130μm。 半导体器件设置有电路部分和天线，并且电路部分包括薄膜晶体管。 电路部分和天线与在制造期间使用的基板分离，并且被插入在柔性基底和密封层之间并被保护。 半导体器件可以弯曲，并且半导体器件本身的厚度小于或等于30μm。 半导体器件以造纸工艺嵌入纸中。

公开(公告)号：US20060270189A1

公开(公告)日：2006-11-30

申请号：US11442216

申请日：2006-05-30

申请人： Kaori Ogita ,  Tomoko Tamura

发明人： Kaori Ogita ,  Tomoko Tamura

IPC分类号： H01L21/46 ,  H01L23/00

CPC分类号： H01L27/12 ,  H01L21/84

摘要： To simplify a peeling step in a method for manufacturing a semiconductor device including the peeling step. A first layer having a metal film is formed over a substrate; a second layer having a transistor is formed over the first layer having the metal film; a resin material is applied over the layer having the transistor; the resin material is cured by a heat treatment at a first heat treatment temperature to form a resin layer; the layer having the transistor is peeled from the substrate by a heat treatment at a second heat treatment temperature which is higher than the first heat treatment temperature; and the resin layer is peeled from the layer having the transistor by a heat treatment at a third heat treatment temperature which is higher than the second heat treatment temperature.

摘要翻译： 为了简化包括剥离步骤的半导体器件的制造方法中的剥离步骤。 在基板上形成具有金属膜的第一层; 在具有金属膜的第一层上形成具有晶体管的第二层; 在具有晶体管的层上施加树脂材料; 通过在第一热处理温度下的热处理固化树脂材料，以形成树脂层; 通过在比第一热处理温度高的第二热处理温度下进行热处理从晶片上剥离具有晶体管的层; 在比第二热处理温度高的第三热处理温度下进行热处理，从具有晶体管的层剥离树脂层。

公开(公告)号：US10570113B2

公开(公告)日：2020-02-25

申请号：US13078388

申请日：2011-04-01

申请人： Kaori Ogita ,  Tsunenori Suzuki ,  Satoshi Seo

发明人： Kaori Ogita ,  Tsunenori Suzuki ,  Satoshi Seo

IPC分类号： C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  C07D307/91 ,  C07D333/76 ,  H05B33/14 ,  H05B33/28

摘要： Provided is a novel aromatic amine derivative represented by General Formula (G1) below. (In the formula, A represents oxygen or sulfur, and R1 to R7 individually represent any of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, and a substituted or unsubstituted biphenyl group. In addition, α1 and α2 individually represent a substituted or unsubstituted phenylene group. Further, Ar1 represents a substituted or unsubstituted condensed aromatic hydrocarbon having 14 to 18 carbon atoms included in a ring. Further, Ar2 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms included in a ring. Further, j and n are individually 0 or 1, and p is 1 or 2.).

公开(公告)号：US08674114B2

公开(公告)日：2014-03-18

申请号：US13469619

申请日：2012-05-11

申请人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

发明人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

IPC分类号： C07D409/14

CPC分类号： C07D209/86 ,  C07D405/14 ,  C07D409/10 ,  C07D409/14 ,  C07D471/04

摘要： A novel carbazole compound that can be used for a transport layer, a host material, or a light-emitting material in a light-emitting element. In the carbazole compound, two carbazole skeletons each include carbazole, the 3-position of which is bonded to the 4-position of a dibenzofuran skeleton or a dibenzothiophene skeleton and these two carbazole skeletons are linked via benzene or biphenyl. The carbazole compound has an excellent carrier-transport property and a wide energy gap and can be suitably used for a material in a light-emitting element or for an organic semiconductor material.

摘要翻译： 可用于发光元件中的输送层，主体材料或发光材料的新型咔唑化合物。 在咔唑化合物中，两个咔唑骨架各自包含咔唑，其3-位与二苯并呋喃骨架或二苯并噻吩骨架的4-位结合，并且这两个咔唑骨架通过苯或联苯连接。 咔唑化合物具有优异的载流子传输性和宽的能隙，并且可以适用于发光元件或有机半导体材料中的材料。

公开(公告)号：US20120289708A1

公开(公告)日：2012-11-15

申请号：US13469619

申请日：2012-05-11

申请人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

发明人： Sachiko Kawakami ,  Kaori Ogita ,  Nobuharu Ohsawa ,  Hiromi Seo ,  Satoshi Seo

IPC分类号： C07D409/14

CPC分类号： C07D209/86 ,  C07D405/14 ,  C07D409/10 ,  C07D409/14 ,  C07D471/04

摘要： A novel carbazole compound that can be used for a transport layer, a host material, or a light-emitting material in a light-emitting element. In the carbazole compound, two carbazole skeletons each include carbazole, the 3-position of which is bonded to the 4-position of a dibenzofuran skeleton or a dibenzothiophene skeleton and these two carbazole skeletons are linked via benzene or biphenyl. The carbazole compound has an excellent carrier-transport property and a wide energy gap and can be suitably used for a material in a light-emitting element or for an organic semiconductor material.

摘要翻译： 可用于发光元件中的输送层，主体材料或发光材料的新型咔唑化合物。 在咔唑化合物中，两个咔唑骨架各自包含咔唑，其3-位与二苯并呋喃骨架或二苯并噻吩骨架的4-位结合，并且这两个咔唑骨架通过苯或联苯连接。 咔唑化合物具有优异的载流子传输性和宽的能隙，并且可以适用于发光元件或有机半导体材料中的材料。

公开(公告)号：US08283055B2

公开(公告)日：2012-10-09

申请号：US12576031

申请日：2009-10-08

申请人： Satoshi Seo ,  Sachiko Kawakami ,  Tsunenori Suzuki ,  Kaori Ogita

发明人： Satoshi Seo ,  Sachiko Kawakami ,  Tsunenori Suzuki ,  Kaori Ogita

IPC分类号： H01L51/50

CPC分类号： C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5012 ,  H05B33/14

摘要： A material for a light-emitting element is represented by a general formula (G1). In the general formula (G1), Ar1 represents a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, Ar2, Ar3, and Ar4 each independently represent a substituted or unsubstituted arylene group having 6 to 13 carbon atoms, R1 to R8 independently represent hydrogen or an alkyl group having 1 to 4 carbon atoms, R11 represents an alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and R12 represents an alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group having 6 to 13 carbon atoms.

摘要翻译： 用于发光元件的材料由通式（G1）表示。 在通式（G1）中，Ar 1表示取代或未取代的碳原子数6〜13的芳基，Ar 2，Ar 3和Ar 4各自独立地表示取代或未取代的碳原子数6〜13的亚芳基， 氢或具有1至4个碳原子的烷基，R 11表示具有1至4个碳原子的烷基或具有6至13个碳原子的取代或未取代的芳基，R 12表示具有1至4个碳原子的烷基或 取代或未取代的碳原子数6〜13的芳基。