METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    形成微晶半导体膜的方法和制造半导体器件的方法

    公开(公告)号:US20120021570A1

    公开(公告)日:2012-01-26

    申请号:US13184589

    申请日:2011-07-18

    IPC分类号: H01L21/336 H01L21/20

    摘要: A seed crystal including mixed phase grains having high crystallinity with a low grain density is formed under a first condition, and a microcrystalline semiconductor film is formed over the seed crystal under a second condition which allows the mixed phase grains in the seed crystal to grow to fill a space between the mixed phase grains. In the first condition, the flow rate of hydrogen is 50 times or greater and 1000 times or less that of a deposition gas containing silicon or germanium, and the pressure in a process chamber is greater than 1333 Pa and 13332 Pa or less. In the second condition, the flow rate of hydrogen is 100 times or greater and 2000 times or less that of a deposition gas containing silicon or germanium, and the pressure in the process chamber is 1333 Pa or greater and 13332 Pa or less.

    摘要翻译: 在第一条件下形成包括具有低晶粒密度的高结晶度的混合相晶粒的晶种,并且在第二条件下在晶种上形成微晶半导体膜,所述第二条件允许晶种中的混晶相生长至 填充混合晶粒之间的空间。 在第一条件下,氢气的流量为含有硅或锗的沉积气体的50倍以上且1000倍以下,处理室中的压力大于1333Pa,13332Pa以下。 在第二条件下,氢气的流量为含有硅或锗的沉积气体的100倍以上且2000倍以下,处理室内的压力为1333Pa以上且13332Pa以下。