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14 条记录 (耗时 0.016 秒)

    WEAR RESISTANT COATINGS CONTAINING PARTICLES HAVING A UNIQUE MORPHOLOGY
    2.
    发明申请
    WEAR RESISTANT COATINGS CONTAINING PARTICLES HAVING A UNIQUE MORPHOLOGY 审中-公开
    含有具有独特形态的颗粒的耐磨涂层

    公开(公告)号：US20120100366A1

    公开(公告)日：2012-04-26

    申请号：US13289255

    申请日：2011-11-04

    申请人： Timothy Dumm ,  Kan-yin Ng

    发明人： Timothy Dumm ,  Kan-yin Ng

    IPC分类号： B32B5/16 ,  C08K3/10 ,  B32B27/04 ,  C09D1/00 ,  B32B15/00 ,  B32B17/00

    CPC分类号： C09C1/44 ,  Y10T428/264

    摘要： A composite coating including a plurality of monocrystalline diamond particles having an irregular surface, wherein the surface roughness of said particle is less than about 0.95, a material selected from the group of metals, metal alloys polymer, glass, carbon and combinations thereof and optional additives.

    摘要翻译： 一种复合涂层，其包括具有不规则表面的多个单晶金刚石颗粒，其中所述颗粒的表面粗糙度小于约0.95，选自金属，金属合金聚合物，玻璃，碳及其组合的材料和任选的添加剂 。

    Method for wafer processing
    5.
    发明授权
    Method for wafer processing 失效
    晶圆加工方法

    公开(公告)号：US06514423B1

    公开(公告)日：2003-02-04

    申请号：US09507811

    申请日：2000-02-22

    申请人： Kan-Yin Ng ,  Brent Teasley

    发明人： Kan-Yin Ng ,  Brent Teasley

    IPC分类号： B29B2902

    CPC分类号： H01L21/02021

    摘要： A method for processing a semiconductor wafer to reduce surface roughness. The wafer has two flat, opposite faces with a peripheral edge extending around a circumference of the wafer between the faces. The method includes, in the following order, the steps of burnishing the edge, and etching the edge. The step of burnishing is defined by a relative rubbing motion between the edge and an abrasive appliance to remove damage from the edge, the rubbing motion occurring free from any polishing solution or chemical slurry. The step of etching includes exposing the wafer to a liquid chemical etchant for a period of time to remove additional damage from the edge. The method may also include, before the other steps, a step of lapping at least one face of the wafer to remove semiconductor matter through a relative rubbing motion between the face and an abrasive lapping plate in the presence of an abrasive liquid slurry.

    摘要翻译： 一种用于处理半导体晶片以减少表面粗糙度的方法。 晶片具有两个平坦的相对的面，其周边在面之间围绕晶片的圆周延伸。 该方法按照以下顺序包括抛光边缘和蚀刻边缘的步骤。 抛光的步骤由边缘和研磨器具之间的相对摩擦运动来定义，以消除来自边缘的损伤，不发生任何抛光溶液或化学浆料的摩擦运动。 蚀刻步骤包括将晶片暴露于液体化学蚀刻剂一段时间以除去边缘附加的损伤。 该方法还可以包括在其它步骤之前，在研磨液体浆料存在下，研磨晶片的至少一个面以通过面和磨料研磨板之间的相对摩擦运动去除半导体物质的步骤。

    Apparatus and process for high temperature wafer edge polishing
    10.
    发明授权
    Apparatus and process for high temperature wafer edge polishing 失效
    高温晶片边缘抛光的设备和工艺

    公开(公告)号：US06257954B1

    公开(公告)日：2001-07-10

    申请号：US09511030

    申请日：2000-02-23

    申请人： Kan-Yin Ng ,  Robert J. Walsh ,  Henry Erk ,  Dennis Buese

    发明人： Kan-Yin Ng ,  Robert J. Walsh ,  Henry Erk ,  Dennis Buese

    IPC分类号： B24B4900

    CPC分类号： B24D13/02 ,  B24B9/065 ,  B24B49/14

    摘要： An apparatus and process for chemical-mechanical polishing an edge of a semiconductor wafer using a heated polishing pad and a heated liquid chemical slurry. The apparatus includes a rotatable drum having a cylindric outer surface, a heatable mat positioned around the outer surface of the drum, and a polishing pad in generally parallel arrangement with the mat. A wafer holder, a container of liquid slurry, and a slurry delivery system are also included. The process includes the steps of heating a liquid slurry to an elevated temperature and applying heat to the polishing pad from an underside of the polishing pad to elevate the temperature of the polishing pad. A peripheral edge of a semiconductor wafer is engaged against a polishing side of the polishing pad, and a relative motion is effected between the wafer and the pad while simultaneously dispensing the heated slurry onto a region where the edge of the wafer engages the pad.

    摘要翻译： 使用加热的抛光垫和加热的液体化学浆料对半导体晶片的边缘进行化学机械研磨的装置和方法。 该设备包括具有圆柱形外表面的可旋转滚筒，围绕滚筒的外表面定位的可加热垫，以及大体上与垫子平行布置的抛光垫。 还包括晶片保持器，液体浆料容器和浆料输送系统。 该方法包括以下步骤：将液体浆料加热到升高的温度，并从抛光垫的下侧向抛光垫施加热量，以提高抛光垫的温度。 半导体晶片的外围边缘与抛光垫的抛光侧接合，并且在晶片和焊盘之间进行相对运动，同时将加热的浆料分配到晶片的边缘与焊盘接合的区域上。