Nonvolatile Memory Device Comprising a Metal-to-Insulator Transition Material
    7.
    发明申请
    Nonvolatile Memory Device Comprising a Metal-to-Insulator Transition Material 审中-公开
    包括金属到绝缘体转换材料的非易失性存储器件

    公开(公告)号:US20130187113A1

    公开(公告)日:2013-07-25

    申请号:US13744613

    申请日:2013-01-18

    CPC classification number: H01L45/1286 H01L45/04 H01L45/1206 H01L45/146

    Abstract: A nonvolatile memory device is disclosed comprising a metal-to-insulator transition material thermally coupled to a Peltier element. During programming, a selected current is flowing through the Peltier element, the level thereof determining whether the temperature of the Peltier element and hence of the thermally coupled metal-to-insulator transition material decreases or increases. In response to this temperature change, the metal-to-insulator transition material will change from one electrical conduction phase to another. The memory device is read by applying current through the metal-to-insulator transition material, the current level being selected to maintain the phase of the metal-to-insulator transition material.

    Abstract translation: 公开了一种非易失性存储器件,其包括热耦合到珀尔帖元件的金属至绝缘体转变材料。 在编程期间,所选择的电流流过珀尔帖元件,其电平确定珀尔帖元件的温度和因此热耦合的金属至绝缘体转变材料的温度是否降低或增加。 响应于这种温度变化,金属对绝缘体的过渡材料将从一个导电相变到另一个。 通过施加通过金属至绝缘体转变材料的电流来读取存储器件,选择电流电平以维持金属至绝缘体转变材料的相位。

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