公开(公告)号：US10276589B2

公开(公告)日：2019-04-30

申请号：US15499291

申请日：2017-04-27

申请人： Hyung Joon Kim ,  Yong Seok Cho ,  BiO Kim ,  Jung Ho Kim ,  Joong Yun Ra ,  Sung Hae Lee

发明人： Hyung Joon Kim ,  Yong Seok Cho ,  BiO Kim ,  Jung Ho Kim ,  Joong Yun Ra ,  Sung Hae Lee

IPC分类号： H01L27/11582 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L29/51 ,  H01L27/11565

摘要： A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.

公开(公告)号：US20160172372A1

公开(公告)日：2016-06-16

申请号：US14963987

申请日：2015-12-09

申请人： JU-MI YUN ,  YOUNG-JIN NOH ,  KWANG-MIN PARK ,  JAE-YOUNG AHN ,  GUK-HYON YON ,  DONG-CHUL YOO ,  JOONG-YUN RA ,  YOUNG-SEON SON ,  JEON-IL LEE ,  HUN-HYEONG LIM

发明人： JU-MI YUN ,  YOUNG-JIN NOH ,  KWANG-MIN PARK ,  JAE-YOUNG AHN ,  GUK-HYON YON ,  DONG-CHUL YOO ,  JOONG-YUN RA ,  YOUNG-SEON SON ,  JEON-IL LEE ,  HUN-HYEONG LIM

IPC分类号： H01L27/115 ,  H01L29/51 ,  H01L29/49 ,  H01L29/788

CPC分类号： H01L27/11582 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11556 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7883

摘要： A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.

摘要翻译： 如下提供半导体器件。 隧道绝缘层设置在基板上。 隧道绝缘层包括第一氧化硅层，第二氧化硅层和介于第一氧化硅层和第二氧化硅层之间的硅层。 硅层的厚度小于第一氧化硅层和第二氧化硅层的厚度。 栅极图案设置在隧道绝缘层上。

公开(公告)号：US20160168704A1

公开(公告)日：2016-06-16

申请号：US14963744

申请日：2015-12-09

申请人： Ji-Hoon CHOI ,  Young-Jin NOH ,  Joong-Yun RA ,  Jae-Young AHN ,  Hun-hyeong LIM

发明人： Ji-Hoon CHOI ,  Young-Jin NOH ,  Joong-Yun RA ,  Jae-Young AHN ,  Hun-hyeong LIM

IPC分类号： C23C16/455

CPC分类号： C23C16/45578 ,  C23C16/45546

摘要： A gas injector may comprise: a gas introduction tube configured to introduce reaction gas into a reaction tube from a gas supply source; and/or a gas distributor connected to the gas introduction tube, extending from the gas introduction tube in a direction within the reaction tube, including a plurality of ejection holes in an inner surface of the gas distributor, and having an arc shape extending in a circumferential direction of the reaction tube. The ejection holes may be spaced apart from each other in the extending direction of the gas distributor, and are configured to spray the reaction gas.

摘要翻译： 气体注入器可以包括：气体引入管，其构造成将反应气体从气体供应源引入反应管中; 和/或气体分配器，其连接到气体导入管，从气体导入管沿着反应管内的方向延伸，包括在气体分配器的内表面中的多个喷射孔，并且具有在 反应管的圆周方向。 喷射孔可以在气体分配器的延伸方向上彼此间隔开，并且被配置为喷射反应气体。

公开(公告)号：US20180122821A1

公开(公告)日：2018-05-03

申请号：US15499291

申请日：2017-04-27

申请人： Hyung Joon KIM ,  Yong Seok CHO ,  BiO KIM ,  Jung Ho KIM ,  Joong Yun RA ,  Sung Hae LEE

发明人： Hyung Joon KIM ,  Yong Seok CHO ,  BiO KIM ,  Jung Ho KIM ,  Joong Yun RA ,  Sung Hae LEE

IPC分类号： H01L27/11582 ,  H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L27/11582 ,  H01L21/02178 ,  H01L21/02356 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/31122 ,  H01L27/11565 ,  H01L29/513 ,  H01L29/517

摘要： A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.