摘要:
A method and device is disclosed for reducing and controlling stuttering. The method involves tactile feedback of the stutterer's own speech to reducing stuttering. In one embodiment, the device may detect speech by audible or mechanical means, and the feedback may be produced by vibration mechanisms.
摘要:
A dense guide image or signal is used to inform the reconstruction of a target image from a sparse set of target points. The guide image and the set of target points are assumed to be derived from a same real world subject or scene. Potential discontinuities (e.g., tears, edges, gaps, etc.) are first detected in the guide image. The potential discontinuities may be borders of Voronoi regions, perhaps computed using a distance in data space (e.g., color space). The discontinuities and sparse set of points are used to reconstruct the target image. Specifically, pixels of the target image may be interpolated smoothly between neighboring target points, but where neighboring target points are separated by a discontinuity, the interpolation may jump abruptly (e.g., by adjusting or influencing relaxation) at the discontinuity. The target points may be used to select only a subset of the discontinuities to be used during reconstruction.
摘要:
A stator/rotor assembly includes at least one extruded preform bonded to a stator housing and/or a rotor mandrel. A method of constructing a stator/rotor assembly includes extruding at least one preform, and bonding the preform to a stator housing and/or a rotor mandrel. A method of constructing a stator includes applying multiple polymer strips to a bladder; and bonding the polymer strips to a stator housing while compressing the polymer strips between the bladder and the stator housing, without injection molding. A method of constructing a rotor includes applying multiple polymer strips to a rotor mandrel, and bonding the polymer strips to the rotor mandrel while compressing the polymer strips between a bladder and the rotor mandrel, without injection molding.
摘要:
A wafer support for supporting a semiconductor wafer during a process including varied temperature. The wafer support includes a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer. The top surface has a recessed area including an inclined surface rising from a bottom of the recessed area. The inclined surface has an incline angle that is no more than about ten degrees.
摘要:
Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and other deposition processes, with laser annealing, etching techniques, and laser doping, all performed at low temperatures such that the precision, resolution, and registration is achieved to produce a high performing transistor. Such TFTs can be used in applications such as displays, packaging, labeling, and the like.
摘要:
Methods and systems for accessing patient history information in a health services environment using a human body graphical user interface are presented. An exemplary computer-implemented method for accessing patient history information includes identifying established medical codes, which are associated with portions of the human body, from patient history information for a patient; mapping the patient history information to corresponding portions of the human body based on the identified established medical codes; and displaying the patient history information for the patient in accordance with the mapping using a human body graphical user interface (GUI). The human body GUI comprises an anatomical representation of the human body that graphically depicts a plurality of portions of the human body associated with the established medical codes.
摘要:
Techniques and tools for mesh processing are described. For example, a multi-chart geometry image represents arbitrary surfaces on object models. The multi-chart geometry image is created by resampling a surface onto a regular 2D grid, using a flexible atlas construction to map the surface piecewise onto charts of arbitrary shape. This added flexibility reduces parameterization distortion and thus provides greater geometric fidelity, particularly for shapes with long extremities, high genus, or disconnected components. As another example, zippering creates a watertight surface on reconstructed triangle meshes. The zippering unifies discrete paths of samples along chart boundaries to form the watertight mesh.
摘要:
A lift-assisted manhole cover assembly with a flush surface and external pivot shaft. The cover includes a mounting tab that extends beyond the general periphery of the cover. The mounting tab may be connected to a shaft that is threadedly engaged with the frame. A spring may be mounted between the frame and the mounting tab, for example, in a sleeve, to provide a mechanical assist in lifting the cover. The sleeve may be disposed outside the manhole opening where it does not block access to the manhole opening.
摘要:
A Schottky barrier MOSFET (SB-MOS) device and a method of manufacturing having a silicon-on-nothing (SON) architecture in a channel region is provided. More specifically, metal source/drain SB-MOS devices are provided in combination with a channel structure comprising a semiconductor channel region such as silicon isolated from a bulk substrate by an SON dielectric layer. In one embodiment, the SON dielectric layer has a triple stack structure comprising oxide on nitride on oxide, which is in contact with the underlying semiconductor substrate.
摘要:
A CMOS device and method of manufacture is provided for producing an integrated circuit that is not susceptible to various soft errors such as single-event upsets, multi-bit upsets or single-event latchup. The CMOS device and method utilizes a new and novel well architecture in conjunction with metal source/drain electrodes to eliminate soft errors. In one embodiment, the CMOS device uses a first metal source/drain material for the NMOS device and a second metal source/drain material for the PMOS device. The CMOS device further uses a multi-layered well-structure with a shallow N-well and a buried P-well for the PMOS device and a shallow P-well and a buried N-well for the NMOS device.