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公开(公告)号：US20120133917A1
公开(公告)日：2012-05-31
申请号：US13306124
申请日：2011-11-29
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01S7/4814 , G01S7/497 , G01S17/08
摘要： A distance-measuring device for contactless measurement of a distance to an object, including a housing; a contactless measuring apparatus utilizing an optical measuring beam arranged in the housing and having a radiation unit, an optical unit with optical elements encompassing at least a transmitting and receiving lens system, an optical transmitting path with an optical axis for emitting a measuring beam onto the target object, an optical receiving path with an optical axis for receiving a measuring beam that is reflected and/or scattered by the target object. At least one optical element is movable relative to an initial position; a motion sensor detects a movement of the object, the optical element movable out of the initial position into a variable compensation position so that the transmitting path can be stabilized at a spatially fixed position.
摘要翻译： 一种距离测量装置，用于对包括壳体的物体的距离进行非接触式测量; 一种非接触式测量装置，其利用布置在壳体中的光学测量光束并具有辐射单元，具有至少包含发射和接收透镜系统的光学元件的光学单元，具有光轴的光学传输路径，用于将测量光束发射到 目标物体，具有光轴的光学接收路径，用于接收被目标物体反射和/或散射的测量光束。 至少一个光学元件可相对于初始位置移动; 运动传感器检测物体的移动，光学元件可以从初始位置移动到可变的补偿位置，使得发送路径可以在空间固定位置被稳定。
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2.发明授权Process for the manufacture of silicon of large surface area bonded to a substrate and silicon-bonded substrates so made 失效用于制造结合到衬底的大表面积的硅和如此制成的与硅键合的衬底的工艺
公开(公告)号：US4141764A
公开(公告)日：1979-02-27
申请号：US840708
申请日：1977-10-11
IPC分类号： C23C16/24 , C30B11/00 , C30B11/12 , H01L21/223 , H01L21/383
CPC分类号： C30B29/06 , C30B11/00 , C30B11/003 , C30B11/12 , C30B29/60
摘要： Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.
摘要翻译： 用于制造与基板结合的大表面积的硅的方法，其包括将硅至30〜500μm的硅沉积到玻璃碳的板状基板（通过碳化空间交联而获得的玻璃状碳） 连接的合成树脂），其通过直接通过电流而被加热到高于硅的熔点的温度，然后将硅冷却到从其自由表面朝向衬底的方向上低于其熔点的温度。 本发明还包括如此制造的硅片，其特别可用于制造太阳能电池。
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公开(公告)号：US4112057A
公开(公告)日：1978-09-05
申请号：US732269
申请日：1976-10-14
IPC分类号： C01B33/107 , C01B33/08 , C01G17/04
CPC分类号： C01B33/08 , C01B33/04 , C01B33/107 , C01G17/04
摘要： Halogenosilanes and halogenogermanes which are contaminated by a boron-coining impurity are purified by treatment with an effective amount of a hydrated metal oxide or a hydrated silicate containing from about 3 to about 8% by weight of water, and then distilling the treated halogenosilane or halogenogermane at a temperature about 3.degree. to about 15.degree. C above its boiling temperature, and at atmosphere pressure.
摘要翻译： 被含硼杂质污染的卤代硅烷和卤代锗烷通过用有效量的水合金属氧化物或含有约3至约8％（重量）水的水合硅酸盐处理而纯化，然后蒸馏处理的卤代硅烷或卤代锗烷 在高于沸点温度约3℃至约15℃的温度下和在大气压下。
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公开(公告)号：US20130141081A1
公开(公告)日：2013-06-06
申请号：US13817049
申请日：2011-08-12
申请人： Christian Pfaffinger , Johann Hofer , Felix Mednikov , Thomas Wisspeintner , Guenter Schallmoser
发明人： Christian Pfaffinger , Johann Hofer , Felix Mednikov , Thomas Wisspeintner , Guenter Schallmoser
IPC分类号： G01B7/14
CPC分类号： G01B7/14 , G01D5/14 , G01R33/1223
摘要： A method for detecting magnetic fields, particularly for detecting the position of objects with a preferably oblong, soft-magnetic element, which is connected to electronics, with via the electronics the impedance of the soft-magnetic material is measured, characterized in that a magnetic field is used in which by the position of an object which is located in an arrangement with the soft-magnetic material the magnetic field develops at the location of the soft-magnetic material, with the magnetic permeability μ of the soft-magnetic material adjusting, depending on the magnetic field and thus the position of the object. A respective device serves for applying the method according to the invention.
摘要翻译： 一种用于检测磁场的方法，特别是用于通过电子装置连接到电子装置来检测具有优选长方形的软磁元件的物体的位置，测量软磁材料的阻抗，其特征在于磁性 使用这样一种场合，其中通过位于与软磁材料的布置中的物体的位置，在软磁材料的位置产生磁场，磁性材料的磁导率μm调节， 这取决于磁场并因此取决于物体的位置。 相应的装置用于应用根据本发明的方法。
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5.发明授权
公开(公告)号：US4210486A
公开(公告)日：1980-07-01
申请号：US773571
申请日：1977-03-02
申请人： Dietrich Schmidt , Johann Hofer , Heinz Herzer
发明人： Dietrich Schmidt , Johann Hofer , Heinz Herzer
CPC分类号： C30B29/06 , C30B13/12 , C30B13/28 , Y10S117/906
摘要： A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subsequently redetermining the specific resistance of the silicon rod, and computing the concentration of the doping agent in the hydrogen used from the known relationship between the specific resistance and the amount of doping agent. By stepwise determination of the resistance along the longitudinal axis of the rod, the amount of doping agent built into the rod at different levels can thus be determined.
摘要翻译： 一种用于确定用于生产半导体的氢的有效掺杂剂含量的方法，其包括在待测试的氢的存在下拉伸具有最高纯度并具有已知电阻率的硅棒，随后重新确定硅的电阻率 并根据电阻率和掺杂剂的量之间的已知关系计算所用氢中掺杂剂的浓度。 通过逐步确定沿着杆的纵向轴线的电阻，可以确定在不同级别内置于棒中的掺杂剂的量。
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6.发明授权
公开(公告)号：US4132763A
公开(公告)日：1979-01-02
申请号：US811029
申请日：1977-06-29
申请人： Dietrich Schmidt , Johann Hofer , Karl E. Huber
发明人： Dietrich Schmidt , Johann Hofer , Karl E. Huber
IPC分类号： B01J8/18 , C01B33/027 , C01B33/029 , C01B33/03 , C22B5/16 , C22B41/00 , C30B13/00 , C30B15/00 , C01B33/02
CPC分类号： C01B33/027 , B01J8/1818 , B01J8/1836 , C01B33/029 , C01B33/03 , C22B41/00 , C22B5/16 , C30B13/00 , C30B15/00 , B01J2208/00176 , B01J2208/00203
摘要： An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.
摘要翻译： 提供了一种用于生产其中通过气相分解产生半导体材料的类型的纯的元素半导体材料，特别是硅的改进方法，其包括将半导体材料的熔体保持在 温度高达材料熔点以上200℃以上。 此后，将至少一种可分解的半导体材料的化合物在约0.01至30巴的压力下引入熔体，以产生液体形式的纯的元素半导体材料。
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公开(公告)号：US4042331A
公开(公告)日：1977-08-16
申请号：US737307
申请日：1976-11-01
申请人： Dietrich Schmidt , Johann Hofer , Winfried Lang , Erich Bildl
发明人： Dietrich Schmidt , Johann Hofer , Winfried Lang , Erich Bildl
CPC分类号： G01N31/00 , G01N27/041
摘要： Process for the determination of the boron content of pure halogensilanes pecially silicon tetrachloride and trichlorosilane, which contain up to 0.1% of atoms of acceptors and donors, which comprises the steps of converting the halogen silanes into the gaseous state in a testing apparatus by contacting said halogensilanes with an evaporator surface heated to a temperature ranging from 80.degree. C to 350.degree. C, passing the generated gases to a support heated to the decomposition temperature of the gases whereby the released silicon is deposited on the support, removing the support and the deposit thereon from the testing apparatus and determining the boron content by calculation from the measured value of the specific resistance of the support plus the deposited silicon. It should be understood that all parts of the testing apparatus which come into contact with the generated gas, with the exception of the support heated to the required deposition temperature, should be at the temperature above 80.degree. C, but below the decomposition temperature of the halogensilane.
摘要翻译： 测定含有高达0.1％受体和供体原子的纯卤素，特别是四氯化硅和三氯硅烷的硼含量的方法，其包括以下步骤：在测试装置中将卤素硅烷转化为气态， 将蒸发器表面加热至80℃至350℃的卤代烷，将产生的气体通入加热至气体分解温度的载体上，由此将释放的硅沉积在载体上，除去载体和沉积物 从测试装置上取出硼含量，并根据载体的电阻率和沉积的硅的测量值计算硼含量。 应当理解，除了被加热到所需沉积温度的载体之外，与所产生的气体接触的测试装置的所有部分应当在高于80℃的温度下，但低于 卤代硅烷
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公开(公告)号：US20060032321A1
公开(公告)日：2006-02-16
申请号：US11199179
申请日：2005-08-09
IPC分类号： F16H3/08
CPC分类号： F16H47/04 , F16H3/006 , F16H3/72 , F16H3/728 , F16H37/084 , F16H61/435 , F16H2037/088 , F16H2037/0886 , F16H2200/0043 , Y10T74/19228
摘要： A power branching transmission suitable for motor vehicles having an internal-combustion engine which drives an input shaft of the power branching transmission has several branches comprising at least one power shift transmission with a number of gears and has an output shaft. For the comprehensive optimization of the power branching transmission, at least one of the branches is equipped with a control device by means of which, during the starting operation of the motor vehicle, the rotating direction of the output shaft can be changed, and during the starting operation and with shifted gears of the power shift transmission connected with the input shaft, by way of the control device, the rotational speed of the output shaft can be continuously influenced.
摘要翻译： 适用于具有驱动动力分配变速器的输入轴的内燃机的机动车辆的动力分配变速器具有多个分支，其包括具有多个齿轮的至少一个动力换挡变速器并且具有输出轴。 对于功率分配传输的综合优化，至少一个分支装备有控制装置，通过该控制装置，在机动车辆的启动操作期间，输出轴的旋转方向可以改变，并且在 起动操作和与输入轴连接的动力换档变速器的变速齿轮，通过控制装置，可以连续地影响输出轴的转速。
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公开(公告)号：US08797511B2
公开(公告)日：2014-08-05
申请号：US13306124
申请日：2011-11-29
IPC分类号： G01C3/08
CPC分类号： G01C3/08 , G01S7/4814 , G01S7/497 , G01S17/08
摘要： A distance-measuring device for contactless measurement of a distance to an object, including a housing; a contactless measuring apparatus utilizing an optical measuring beam arranged in the housing and having a radiation unit, an optical unit with optical elements encompassing at least a transmitting and receiving lens system, an optical transmitting path with an optical axis for emitting a measuring beam onto the target object, an optical receiving path with an optical axis for receiving a measuring beam that is reflected and/or scattered by the target object. At least one optical element is movable relative to an initial position; a motion sensor detects a movement of the object, the optical element movable out of the initial position into a variable compensation position so that the transmitting path can be stabilized at a spatially fixed position.
摘要翻译： 一种距离测量装置，用于对包括壳体的物体的距离进行非接触式测量; 一种非接触式测量装置，其利用布置在壳体中的光学测量光束并具有辐射单元，具有至少包含发射和接收透镜系统的光学元件的光学单元，具有光轴的光学传输路径，用于将测量光束发射到 目标物体，具有光轴的光学接收路径，用于接收被目标物体反射和/或散射的测量光束。 至少一个光学元件可相对于初始位置移动; 运动传感器检测物体的移动，光学元件可以从初始位置移动到可变的补偿位置，使得发送路径可以在空间固定位置被稳定。
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10.发明授权
公开(公告)号：US4057395A
公开(公告)日：1977-11-08
申请号：US746375
申请日：1976-12-01
申请人： Dietrich Schmidt , Karl Erwin Huber , Johann Hofer
发明人： Dietrich Schmidt , Karl Erwin Huber , Johann Hofer
摘要： Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.
摘要翻译： 用于确定半导体工业中使用的高纯度多晶硅的供体含量的方法，所述硅具有高达0.02原子％的已知受体含量和至多0.1原子％的供体含量，该测定包括以下步骤： 将测试棒引入到仅比试杆稍大的内径的气密石英管中，通过在流动保护气体内用晶种进行区域拉伸将棒转变为低晶态，在试棒中形成熔化区 在整个长度上垂直移动，测量如此形成的寡晶试棒的电阻，并根据测得的电阻计算供体浓度，保护气体是惰性气体，混合有10 - 800 ppm的氧气。
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