公开(公告)号：US08747960B2

公开(公告)日：2014-06-10

申请号：US11513446

申请日：2006-08-30

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： C23C14/02 ,  H05H1/00

CPC分类号： C23C18/1651 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  Y02P70/605

摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

摘要翻译： 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后 表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。

公开(公告)号：US20070292615A1

公开(公告)日：2007-12-20

申请号：US11513446

申请日：2006-08-30

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Johan Vertommen ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC分类号： C23C18/1651 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  Y02P70/605

摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve silicon-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce a silicon-to-metal interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a layer of a metal on a silicon or polysilicon surface of the substrate to form a metal silicide in an integrated system is provided. The method includes removing organic contaminants from the substrate surface in the integrated system, and reducing the silicon or polysilicon surface in the integrated system after removing organic contaminants to convert silicon oxide on the silicon or polysilicon surface to silicon, wherein after reducing the silicon or polysilicon surface, the substrate is transferred and processed in controlled environment to prevent the formation of silicon oxide, the silicon or polysilicon surface is reduced to increase the selectivity of the metal on the silicon surface. The method further includes selectively depositing the layer of the metal on the silicon or polysilicon surface of substrate in the integrated system after reducing the silicon or polysilicon surface. An exemplary system to practice the exemplary method described above is also provided.

摘要翻译： 这些实施方案通过提供产生硅 - 金属界面的改进的工艺和系统来满足增强电迁移性能，提供较低金属电阻率以及改进铜互连的硅 - 金属界面粘附的需要。 提供了制备衬底的衬底表面以在衬底的硅或多晶硅表面上选择性地沉积金属层以在集成系统中形成金属硅化物的示例性方法。 该方法包括从集成系统中的衬底表面去除有机污染物，以及在去除有机污染物之后减少集成系统中的硅或多晶硅表面，以将硅或多晶硅表面上的氧化硅转化为硅，其中在还原硅或多晶硅之后 表面，在受控环境中转移和处理衬底以防止形成氧化硅，减少硅或多晶硅表面以增加金属在硅表面上的选择性。 该方法还包括在减少硅或多晶硅表面之后，在集成系统中的衬底的硅或多晶硅表面上选择性地沉积金属层。 还提供了用于实践上述示例性方法的示例性系统。