公开(公告)号：USD1016211S1

公开(公告)日：2024-02-27

申请号：US29804616

申请日：2021-08-21

申请人： Jinho Kim

设计人： Jinho Kim ,  Minkyoung Kim

摘要： FIG. 1 is a perspective view of a first embodiment of a tail portion of an artificial fishing lure of the present invention, wherein the tail portion is combined with a non-claimed body portion.
FIG. 2 is a front view of FIG. 1.
FIG. 3 is a rear view of FIG. 1.
FIG. 4 is a left side view of FIG. 1.
FIG. 5 is a right side view of FIG. 1.
FIG. 6 is a top plan view of FIG. 1.
FIG. 7 is a bottom plan view of FIG. 1.
FIG. 8 shows a state of use of the tail portion of the artificial fishing lure of the present invention, wherein the tail portion is attached to a non-claimed body portion.
FIG. 9 is a perspective view of a second embodiment of the tail portion of the artificial fishing lure of the present invention.
FIG. 10 is a third embodiment perspective view of a third embodiment of the tail portion of the artificial fishing lure of the present invention, in such a state that the tail portion is not combined with the non-claimed body portion.
FIG. 11 is a front view of FIG. 10.
FIG. 12 is a rear view of FIG. 10.
FIG. 13 is a left side view of FIG. 10.
FIG. 14 is a right side view of FIG. 10.
FIG. 15 is a top plan view of FIG. 10; and,
FIG. 16 is a bottom plan view of FIG. 10.
The broken lines in the figures illustrate the non-claimed body portion of the artificial fishing lure and form no part of the claimed design.

公开(公告)号：US20130290551A1

公开(公告)日：2013-10-31

申请号：US13979078

申请日：2012-01-11

申请人： Seungryul Yang ,  Youngwook Kang ,  Minsoo Lee ,  Jangwoong Park ,  Chanhun Jeon ,  Beom Jin Jeon ,  Jinho Kim

发明人： Seungryul Yang ,  Youngwook Kang ,  Minsoo Lee ,  Jangwoong Park ,  Chanhun Jeon ,  Beom Jin Jeon ,  Jinho Kim

IPC分类号： H04L29/06

CPC分类号： H04L65/1013 ,  H04L12/2803 ,  H04L65/1083 ,  H04W36/0066

摘要： A control target device receives, from a control point device connected to a first network, a message for requesting movement to a second network. The control target device transmits a network movement advertising message to the control point device of the first network. The control target device disconnects from the first network and accesses the second network.The control point device collects device information on a plurality of control target devices connected to a plurality of networks. When a network of one control target device selected from the plurality of control target devices is different from a network of the control point device, the control point device accesses the network of the selected control target device.

摘要翻译： 控制目标设备从连接到第一网络的控制点设备接收用于请求移动到第二网络的消息。 控制对象设备向第一网络的控制点设备发送网络移动广告消息。 控制对象设备与第一个网络断开连接并访问第二个网络。 控制点设备在连接到多个网络的多个控制目标设备上收集设备信息。 当从多个控制目标设备中选择的一个控制对象设备的网络与控制点设备的网络不同时，控制点设备访问所选择的控制目标设备的网络。

公开(公告)号：US08187790B2

公开(公告)日：2012-05-29

申请号：US12416973

申请日：2009-04-02

申请人： Hyunsang Joo ,  Jinho Kim ,  Yonghwa Hong ,  Changsoo Lee

发明人： Hyunsang Joo ,  Jinho Kim ,  Yonghwa Hong ,  Changsoo Lee

IPC分类号： G03F7/038 ,  G03F7/039 ,  C08F24/00 ,  C08G59/68

CPC分类号： C08F220/28 ,  C08F224/00 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/115 ,  Y10S430/122

摘要： Disclosed are a polymer for a chemically amplified resist represented as and a resist composition using the same. In the above Chemical formula 1, X represents vinyl ether derivatives or olefin derivatives, at least one of R1, R2, R3, and R4 is an alkyl group with 1 to 30 carbon atoms containing at least one functional group of a hydrogen atom, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitryl group (—CN), and an aldehyde group, l, m, n, o and p respectively represent repeating units, l represents a real number of 0.05 to 0.5, m and n respectively represent real numbers of 0.1 to 0.7, o and p respectively represent real numbers of 0 to 0.7, and a sum of l, m, n, o and p is 1.

摘要翻译： 公开了用于化学增幅抗蚀剂的聚合物和使用其的抗蚀剂组合物。 在上述化学式1中，X表示乙烯基醚衍生物或烯烃衍生物，R 1，R 2，R 3和R 4中的至少一个为含有至少一个氢原子官能团的碳原子数1〜30的烷基， 醚基，酯基，羰基，缩醛基，环氧基，硝基（-CN）和醛基，l，m，n，o和p分别表示重复单元，l表示实际 0.05至0.5，m和n分别表示实数为0.1至0.7，o和p分别表示0至0.7的实数，并且l，m，n，o和p的和为1。

公开(公告)号：US08110834B2

公开(公告)日：2012-02-07

申请号：US12651727

申请日：2010-01-04

申请人： Jinho Kim ,  Sunghoi Hur ,  Hansoo Kim ,  Younggoan Jang ,  Sunil Shim

发明人： Jinho Kim ,  Sunghoi Hur ,  Hansoo Kim ,  Younggoan Jang ,  Sunil Shim

IPC分类号： H01L29/04

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

摘要： A three-dimensional semiconductor device includes a vertical channel pattern on the substrate, a plurality of cell gate patterns and a select gate pattern stacked on the substrate along the sidewall of the vertical channel pattern, a charge storage pattern between the vertical channel pattern and the cell gate pattern and a select gate pattern between the vertical channel pattern and the select gate pattern. The select gate pattern has a different work function from the cell gate pattern.

摘要翻译： 三维半导体器件包括在衬底上的垂直沟道图案，沿着垂直沟道图案的侧壁堆叠在衬底上的多个单元栅极图案和选择栅极图案，垂直沟道图案和垂直沟道图案之间的电荷存储图案 单元栅极图案和垂直沟道图案与选择栅格图案之间的选择栅极图案。 选择栅极图案具有与单元栅极图案不同的功函数。

公开(公告)号：US20110305083A1

公开(公告)日：2011-12-15

申请号：US13217627

申请日：2011-08-25

申请人： Sunil Shim ,  Sunghoi Hur ,  Younggoan Jang ,  Jinho Kim ,  Su-Youn Yi ,  HuiChang Moon

发明人： Sunil Shim ,  Sunghoi Hur ,  Younggoan Jang ,  Jinho Kim ,  Su-Youn Yi ,  HuiChang Moon

IPC分类号： G11C11/34

CPC分类号： G11C5/02 ,  G11C5/063 ,  G11C8/14 ,  G11C16/0483 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578

摘要： A nonvolatile memory device having a three-dimensional structure includes first word line stacks in which first word lines are stacked; second word line stacks in which second word lines parallel to the first word lines are stacked; first connection lines connecting the first word lines; and second connection lines connecting the second word lines. Each of the first connection lines connects the first word lines located at a common layer, each of the second connection lines connects the second word lines located at a common layer and at least one second word line stack is disposed between a pair of the first word line stacks.

摘要翻译： 具有三维结构的非易失性存储器件包括第一字线堆叠，其中第一字线被堆叠; 第二字线堆叠，其中平行于第一字线的第二字线被堆叠; 连接第一字线的第一连接线; 以及连接第二字线的第二连接线。 每个第一连接线连接位于公共层的第一字线，每个第二连接线连接位于公共层的第二字线，并且至少一个第二字线堆叠设置在一对第一字之间 线堆叠

公开(公告)号：US20100207184A1

公开(公告)日：2010-08-19

申请号：US12658154

申请日：2010-02-03

申请人： Kihyun Kim ,  Hansoo Kim ,  Wonseok Cho ,  Jinho Kim ,  Jaehoon Jang ,  Byoungkeun Son

发明人： Kihyun Kim ,  Hansoo Kim ,  Wonseok Cho ,  Jinho Kim ,  Jaehoon Jang ,  Byoungkeun Son

IPC分类号： H01L29/78

CPC分类号： H01L27/11578 ,  H01L27/11551 ,  H01L27/11556

摘要： A semiconductor device includes insulating patterns and gate patterns alternately stacked on a substrate; an active pattern on the substrate, which extends upward along sidewalls of the insulating patterns and the gate patterns; data storage patterns interposed between the gate patterns and the active pattern; and a source/drain region disposed in the active pattern between a pair of gate patterns adjacent to each other.

摘要翻译： 半导体器件包括交替层叠在衬底上的绝缘图案和栅极图案; 衬底上的有源图案，其沿绝缘图案和栅极图案的侧壁向上延伸; 插入在栅极图案和活动图案之间的数据存储图案; 以及设置在相互邻近的一对栅极图案之间的有源图案中的源极/漏极区域。

公开(公告)号：US20100171163A1

公开(公告)日：2010-07-08

申请号：US12651727

申请日：2010-01-04

申请人： Jinho Kim ,  Sunghoi Hur ,  Hansoo Kim ,  Younggoan Jang ,  Sunil Shim

发明人： Jinho Kim ,  Sunghoi Hur ,  Hansoo Kim ,  Younggoan Jang ,  Sunil Shim

IPC分类号： H01L29/78 ,  H01L29/792

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/7881 ,  H01L29/792 ,  H01L29/7926

摘要： A three-dimensional semiconductor device includes a vertical channel pattern on the substrate, a plurality of cell gate patterns and a select gate pattern stacked on the substrate along the sidewall of the vertical channel pattern, a charge storage pattern between the vertical channel pattern and the cell gate pattern and a select gate pattern between the vertical channel pattern and the select gate pattern. The select gate pattern has a different work function from the cell gate pattern

摘要翻译： 三维半导体器件包括在衬底上的垂直沟道图案，沿着垂直沟道图案的侧壁堆叠在衬底上的多个单元栅极图案和选择栅极图案，垂直沟道图案和垂直沟道图案之间的电荷存储图案 单元栅极图案和垂直沟道图案与选择栅格图案之间的选择栅极图案。 选择栅极图案具有与单元栅极图案不同的功函数

公开(公告)号：US20050096370A1

公开(公告)日：2005-05-05

申请号：US10642363

申请日：2003-08-14

申请人： Jong-Wan Park ,  Yang-Sook Chun ,  Jinho Kim

发明人： Jong-Wan Park ,  Yang-Sook Chun ,  Jinho Kim

IPC分类号： A61K31/416

CPC分类号： A61K31/416

摘要： The present invention provides methods and pharmaceutical compositions for inhibiting expressions of HIF-1 and HIF-1-regulated genes, angiogenesis, tumor growth, or tumor progression/metastasis comprising contacting the tumor cells or tissue with a composition comprising 3-(5′-hydroxymethyl-2′-furyl)-1-benzylindazole, or a novel derivative thereof.

摘要翻译： 本发明提供了用于抑制HIF-1和HIF-1调节基因表达，血管发生，肿瘤生长或肿瘤进展/转移的方法和药物组合物，包括使肿瘤细胞或组织与包含3-（5'- 羟甲基-2'-呋喃基）-1-苯并吲唑或其新型衍生物。

公开(公告)号：US20160225781A1

公开(公告)日：2016-08-04

申请号：US15093933

申请日：2016-04-08

申请人： Byoungkeun SON ,  Hansoo KIM ,  Jinho KIM ,  Kihyun KIM

发明人： Byoungkeun SON ,  Hansoo KIM ,  Jinho KIM ,  Kihyun KIM

IPC分类号： H01L27/115 ,  H01L29/423

CPC分类号： H01L21/28 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11553 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/42324 ,  H01L29/42364 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/7827 ,  H01L29/7841 ,  H01L29/788 ,  H01L29/7883 ,  H01L29/7889

摘要： Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

公开(公告)号：US08787082B2

公开(公告)日：2014-07-22

申请号：US13594102

申请日：2012-08-24

申请人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

发明人： Byoungkeun Son ,  Hansoo Kim ,  Youngsoo An ,  Mingu Kim ,  Jinho Kim ,  Jaehyoung Choi ,  Sukhun Choi ,  Jae-Joo Shim ,  Wonseok Cho ,  Sunil Shim ,  Ju-Young Lim

IPC分类号： G11C16/04

CPC分类号： H01L27/0207 ,  G11C7/18 ,  H01L23/535 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a substantially planar substrate; a memory string vertical to the substrate, the memory string comprising a plurality of storage cells; and a plurality of elongated word lines, each word line including a first portion substantially parallel to the substrate and connected to the memory string and a second portion substantially inclined relative to the substrate and extending above the substrate, wherein a first group of the plurality of word lines are electrically connected to first conductive lines disposed at a first side of the memory string, and a second group of the plurality of word lines are electrically connected to second conductive lines disposed at a second side of the memory string.

摘要翻译： 半导体存储器件包括基本上平面的衬底; 垂直于衬底的存储器串，所述存储器串包括多个存储单元; 和多个细长字线，每个字线包括基本上平行于衬底并连接到存储器串的第一部分和相对于衬底基本上倾斜并在衬底上延伸的第二部分，其中多个 字线电连接到设置在存储器串的第一侧的第一导线，并且多个字线的第二组电连接到设置在存储器串的第二侧的第二导电线。