公开(公告)号：US08815673B2

公开(公告)日：2014-08-26

申请号：US13480947

申请日：2012-05-25

Applicant: Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

Inventor： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

IPC: H01L21/8238 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/823857 ,  H01L21/28202 ,  H01L29/518

Abstract: In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

Abstract translation: 在本发明的一些实施方案中，方法包括在半导体衬底上形成氧化物层，将氮注入到氧化物层中以形成氮注入层并将氧化物层改变为氧氮化物层，除去氧氮化物层的一部分 将氮氧化物层的一部分留在第一区域中，并在第二区域中露出氮气注入层，并形成绝缘层，该绝缘层包括第一区域中的氧氮化物层的一部分和氮注入层上的一部分 第二个区域。 绝缘层可以具有比氧化物层更高的介电常数。

公开(公告)号：US08563411B2

公开(公告)日：2013-10-22

申请号：US13191948

申请日：2011-07-27

Applicant: Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/3205

CPC classification number: H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4966

Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

公开(公告)号：US20110306171A1

公开(公告)日：2011-12-15

申请号：US13105652

申请日：2011-05-11

Applicant: Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/8238 ,  H01L21/28

CPC classification number: H01L21/823857 ,  H01L21/28202 ,  H01L29/518

Abstract: An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively.

Abstract translation: 在其上限定有NMOS区和PMOS区的基板上形成绝缘层。 在PMOS区域中的绝缘层上形成第一导电层，使NMOS区域中的绝缘层的一部分露出。 进行氮化，以在NMOS区域中的绝缘层中产生第一氮浓度，并且在PMOS区域中的绝缘层中小于第一氮浓度的第二氮浓度。 第二导电层形成在绝缘层上，并且第一导电层以及第一和第二导电层和绝缘层被图案化以分别在NMOS区域和PMOS区域中形成第一栅极结构和第二栅极结构。

公开(公告)号：US20120309144A1

公开(公告)日：2012-12-06

申请号：US13480947

申请日：2012-05-25

Applicant: Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

Inventor： Jin-ho Do ,  Moon-han Park ,  Weon-hong Kim ,  Kyung-il Hong

IPC: H01L21/8238 ,  H01L21/3205

CPC classification number: H01L21/823857 ,  H01L21/28202 ,  H01L29/518

Abstract: In some embodiments of the inventive subject matter, methods include forming an oxide layer on a semiconductor substrate, injecting nitrogen into the oxide layer to form a nitrogen injection layer and to change the oxide layer to an oxynitride layer, removing a part of the oxynitride layer to leave a portion of the oxynitride layer in a first area and expose the nitrogen injection layer in a second area and forming an insulating layer comprising a portion on the portion of the oxynitride layer in the first area and a portion on the nitrogen injection layer in the second area. The insulating layer may have a higher dielectric constant than the oxide layer.

Abstract translation: 在本发明的一些实施方案中，方法包括在半导体衬底上形成氧化物层，将氮注入到氧化物层中以形成氮注入层并将氧化物层改变为氧氮化物层，去除一部分氮氧化物层 将氮氧化物层的一部分留在第一区域中，并在第二区域中露出氮气注入层，并形成绝缘层，该绝缘层包括第一区域中的氧氮化物层的一部分和氮注入层上的部分 第二个区域。 绝缘层可以具有比氧化物层更高的介电常数。

公开(公告)号：US20120083111A1

公开(公告)日：2012-04-05

申请号：US13249505

申请日：2011-09-30

Applicant: Ha-Jin Lim ,  Moon-Han Park ,  Eun-Gon Kim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Ha-Jin Lim ,  Moon-Han Park ,  Eun-Gon Kim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/28

CPC classification number: H01L21/28123 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/32134 ,  H01L21/32139 ,  H01L29/517 ,  H01L29/518

Abstract: There is provided a method of manufacturing a semiconductor device. In the method, a gate insulation layer including a high-k dielectric material is formed on a substrate. An etch stop layer is formed on the gate insulation layer. A metal layer is formed on the etch stop layer. A hard mask including amorphous silicon is formed on the metal layer. The metal layer is patterned using the hard mask as an etching mask to form a metal layer pattern.

Abstract translation: 提供了制造半导体器件的方法。 在该方法中，在基板上形成包括高k电介质材料的栅极绝缘层。 在栅绝缘层上形成蚀刻停止层。 在蚀刻停止层上形成金属层。 在金属层上形成包括非晶硅的硬掩模。 使用硬掩模作为蚀刻掩模对金属层进行图案化以形成金属层图案。

公开(公告)号：US20120070975A1

公开(公告)日：2012-03-22

申请号：US13228089

申请日：2011-09-08

Applicant: Ha-Jin Lim ,  Moon-Han Park ,  Min-Woo Song ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Ha-Jin Lim ,  Moon-Han Park ,  Min-Woo Song ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/28

CPC classification number: H01L27/10873 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28202 ,  H01L27/10814 ,  H01L27/10894 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.

Abstract translation: 公开了一种形成具有改善的电特性的玛瑙结构的方法。 在基板上形成栅极绝缘层，在栅极绝缘层上形成金属层。 然后，通过物理气相沉积（PVD）工艺在金属层上形成非晶硅层。 在非晶硅层上形成杂质掺杂多晶硅层。 可以防止在非晶硅层和金属层之间的界面处形成氧化物层。

公开(公告)号：US08673747B2

公开(公告)日：2014-03-18

申请号：US13093097

申请日：2011-04-25

Applicant: Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/00

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。

公开(公告)号：US08455345B2

公开(公告)日：2013-06-04

申请号：US13228089

申请日：2011-09-08

Applicant: Ha-Jin Lim ,  Moon-Han Park ,  Min-Woo Song ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Ha-Jin Lim ,  Moon-Han Park ,  Min-Woo Song ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/28

CPC classification number: H01L27/10873 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28202 ,  H01L27/10814 ,  H01L27/10894 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.

Abstract translation: 公开了一种形成具有改善的电特性的玛瑙结构的方法。 在基板上形成栅极绝缘层，在栅极绝缘层上形成金属层。 然后，通过物理气相沉积（PVD）工艺在金属层上形成非晶硅层。 在非晶硅层上形成杂质掺杂多晶硅层。 可以防止在非晶硅层和金属层之间的界面处形成氧化物层。

公开(公告)号：US20110306184A1

公开(公告)日：2011-12-15

申请号：US13093097

申请日：2011-04-25

Applicant: Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/20

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。

公开(公告)号：US20120309145A1

公开(公告)日：2012-12-06

申请号：US13417787

申请日：2012-03-12

Applicant: Moon-kyun Song ,  Ha-jin Lim ,  Moon-han Park ,  Jin-ho Do

Inventor： Moon-kyun Song ,  Ha-jin Lim ,  Moon-han Park ,  Jin-ho Do

IPC: H01L21/8238 ,  H01L21/336

CPC classification number: H01L21/823412 ,  H01L21/823807

Abstract: Methods of manufacturing semiconductor devices include providing a substrate including a NMOS region and a PMOS region, implanting fluorine ions into an upper surface of the substrate, forming a first gate electrode of the NMOS region and a second gate electrode of the PMOS region on the substrate, forming a source region and a drain region in portions of the substrate, which are adjacent to two lateral surfaces of the first gate electrode and the second gate electrode, respectively, and performing a high-pressure heat-treatment process on an upper surface of the substrate by using non-oxidizing gas.

Abstract translation: 制造半导体器件的方法包括提供包括NMOS区域和PMOS区域的衬底，将氟离子注入到衬底的上表面中，形成NMOS区域的第一栅极电极和衬底上的PMOS区域的第二栅极电极 在所述基板的与所述第一栅电极和所述第二栅电极的两个侧面相邻的部分分别形成源极区域和漏极区域，并在所述第一栅极电极和所述第二栅极电极的上表面上进行高压热处理工序 通过使用非氧化气体的基板。