公开(公告)号：US20090020590A1

公开(公告)日：2009-01-22

申请号：US11778678

申请日：2007-07-17

Applicant: Sarah H. Knickerbocker ,  Sean A. Allen ,  John J. Garant ,  Jerry A. Gorrell ,  Phillip W Palmatier ,  Christopher L. Tessler

Inventor： Sarah H. Knickerbocker ,  Sean A. Allen ,  John J. Garant ,  Jerry A. Gorrell ,  Phillip W Palmatier ,  Christopher L. Tessler

IPC: B23K31/02

CPC classification number: B23K3/0623 ,  B23K2101/40

Abstract: A method is provided for making of interconnect solder bumps on a wafer or other electronic device without depositing any significant amount of tin or other solder component from the solder onto the wafer surface which tin can cause shorts or other defects in the wafer. The method is particularly useful for well-known C4NP interconnect technology. In one aspect of the invention, a reducing gas flow rate is used to remove oxides from the solder surfaces and wafer pad surfaces and is of a sufficient determined or pre-determined flow and/or chamber or mold/wafer spacing to provide a gas velocity across the solder surfaces and wafer pad surfaces so that Sn or other contaminants do not deposit on the wafer surface during solder transfer. In another aspect, the transfer contact is performed below the melting point of the solder and subsequently heated to above the melting temperature while in transfer contact. The heated solder in contact with the wafer pads is transferred to the wafer pads.

Abstract translation: 提供了一种用于在晶片或其他电子器件上制造互连焊料凸块的方法，而不会将任何显着量的锡或其他焊料组分从焊料沉积到晶片表面上，锡可能导致晶片中的短路或其它缺陷。 该方法对于众所周知的C4NP互连技术特别有用。 在本发明的一个方面，使用还原气体流速从焊料表面和晶片焊盘表面去除氧化物，并且具有足够的确定或预定的流动和/或室或模具/晶片间距以提供气体速度 穿过焊料表面和晶片焊盘表面，使得Sn或其他污染物在焊料传输期间不会沉积在晶片表面上。 在另一方面，转移接触在焊料的熔点之下进行，随后在转移接触的同时被加热至高于熔融温度。 与晶片焊盘接触的加热焊料被转移到晶片焊盘。

公开(公告)号：US07666780B2

公开(公告)日：2010-02-23

申请号：US11954828

申请日：2007-12-12

Applicant: Jerry A. Gorrell ,  Sarah H. Knickerbocker ,  Srinivasa S. N. Reddy

Inventor： Jerry A. Gorrell ,  Sarah H. Knickerbocker ,  Srinivasa S. N. Reddy

IPC: H01L21/44

CPC classification number: H05K3/3457 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0338 ,  H01L2224/29099 ,  H01L2224/05599

Abstract: A method is provided for the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and determines if any off-set resulted between the solder mold array and the wafer capture array during the transfer process. The amount of off-set enables the operator to adjust the transfer tool before solder transfer to compensate for the off-set caused by the transfer process and provides a more cost-effective and efficient solder transfer process. A solder reactive material surrounding the capture pads is used to determine where the solder reacts with the solder reactive material showing the off-set resulting from the transfer process. Copper is a preferred solder reactive material.

Abstract translation: 提供了一种用于在晶片或其他电子设备上制造互连焊料凸块的方法。 该方法对于众所周知的C4NP互连技术特别有用，并且确定在传输过程期间在焊料模具阵列和晶片捕获阵列之间是否产生偏移。 偏移量使操作员能够在焊接传输之前调整传送工具，以补偿由传送过程引起的偏移，并提供更具成本效益和更有效的焊接传输过程。 使用围绕捕获垫的焊料反应性材料来确定焊料与焊料反应性材料反应的位置，显示由转移过程导致的偏移。 铜是优选的焊料反应性材料。

公开(公告)号：US07833897B2

公开(公告)日：2010-11-16

申请号：US11778678

申请日：2007-07-17

Applicant: Sarah H. Knickerbocker ,  Sean A. Allen ,  John J. Garant ,  Jerry A. Gorrell ,  Phillip W Palmatier ,  Christopher L Tessler

Inventor： Sarah H. Knickerbocker ,  Sean A. Allen ,  John J. Garant ,  Jerry A. Gorrell ,  Phillip W Palmatier ,  Christopher L Tessler

IPC: H01L21/44 ,  H01L21/00 ,  B23K31/00 ,  B23K31/02

CPC classification number: B23K3/0623 ,  B23K2101/40

Abstract: A method is provided for making of interconnect solder bumps on a wafer or other electronic device without depositing any significant amount of tin or other solder component from the solder onto the wafer surface which tin can cause shorts or other defects in the wafer. The method is particularly useful for well-known C4NP interconnect technology. In one aspect of the invention, a reducing gas flow rate is used to remove oxides from the solder surfaces and wafer pad surfaces and is of a sufficient determined or pre-determined flow and/or chamber or mold/wafer spacing to provide a gas velocity across the solder surfaces and wafer pad surfaces so that Sn or other contaminants do not deposit on the wafer surface during solder transfer. In another aspect, the transfer contact is performed below the melting point of the solder and subsequently heated to above the melting temperature while in transfer contact. The heated solder in contact with the wafer pads is transferred to the wafer pads.

Abstract translation: 提供了一种用于在晶片或其他电子器件上制造互连焊料凸块的方法，而不会将任何显着量的锡或其他焊料组分从焊料沉积到晶片表面上，锡可能导致晶片中的短路或其它缺陷。 该方法对于众所周知的C4NP互连技术特别有用。 在本发明的一个方面，使用还原气体流速从焊料表面和晶片焊盘表面去除氧化物，并且具有足够的确定或预定的流动和/或室或模具/晶片间距以提供气体速度 穿过焊料表面和晶片焊盘表面，使得Sn或其他污染物在焊料传输期间不会沉积在晶片表面上。 在另一方面，转移接触在焊料的熔点之下进行，随后在转移接触的同时被加热至高于熔融温度。 与晶片焊盘接触的加热焊料被转移到晶片焊盘。

公开(公告)号：US06892781B2

公开(公告)日：2005-05-17

申请号：US10156895

申请日：2002-05-28

Applicant: Dale C McHerron ,  Kaushal S. Patel ,  Christopher Lee Tessler ,  Jerry A. Gorrell ,  James Edward Tersigni

Inventor： Dale C McHerron ,  Kaushal S. Patel ,  Christopher Lee Tessler ,  Jerry A. Gorrell ,  James Edward Tersigni

IPC: B30B1/00 ,  H01L21/00 ,  B32B31/00

CPC classification number: H01L21/67103 ,  B30B1/005 ,  B32B37/10 ,  H01L21/67092 ,  Y10T156/16

Abstract: A fixture having a bottom plate, top plate and an expansion block interposed between the bottom plate and top plate. A workpiece is positioned between the expansion block and bottom plate. When the fixture is heated, there is a net displacement exerted by the expansion block so as to apply pressure to the workpiece. The pressure applied by the fixture to the workpiece is due solely to the thermal expansion of the fixture when it is heated.

Abstract translation: 具有底板，顶板和插入在底板和顶板之间的膨胀块的固定装置。 工件位于膨胀块和底板之间。 当夹具被加热时，由膨胀块施加的净位移以对工件施加压力。 夹具施加到工件上的压力仅仅是由于夹具在被加热时的热膨胀。

公开(公告)号：US20090181533A1

公开(公告)日：2009-07-16

申请号：US11954828

申请日：2007-12-12

Applicant: Jerry A. Gorrell ,  Sarah H. Knickerbocker ,  Srinivasa S.N. Reddy

Inventor： Jerry A. Gorrell ,  Sarah H. Knickerbocker ,  Srinivasa S.N. Reddy

IPC: H01L21/441

CPC classification number: H05K3/3457 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0338 ,  H01L2224/29099 ,  H01L2224/05599

Abstract: A method is provided for the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and determines if any off-set resulted between the solder mold array and the wafer capture array during the transfer process. The amount of off-set enables the operator to adjust the transfer tool before solder transfer to compensate for the off-set caused by the transfer process and provides a more cost-effective and efficient solder transfer process. A solder reactive material surrounding the capture pads is used to determine where the solder reacts with the solder reactive material showing the off-set resulting from the transfer process. Copper is a preferred solder reactive material.

Abstract translation: 提供了一种用于在晶片或其他电子设备上制造互连焊料凸块的方法。 该方法对于众所周知的C4NP互连技术特别有用，并且确定在传输过程期间在焊料模具阵列和晶片捕获阵列之间是否产生偏移。 偏移量使操作员能够在焊接传输之前调整传送工具，以补偿由传送过程引起的偏移，并提供更具成本效益和更有效的焊接传输过程。 使用围绕捕获垫的焊料反应性材料来确定焊料与焊料反应性材料反应的位置，显示由转移过程导致的偏移。 铜是优选的焊料反应性材料。